Patents by Inventor Akihiro Yauchi

Akihiro Yauchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130130117
    Abstract: Modified natural graphite particles intended for forming a negative electrode material for a nonaqueous electrolyte secondary battery are characterized by having a circularity of at least 0.93 and at most 1.0 and a surface roughness of at most 1.5% with respect to the length of the particles. These modified natural graphite particles are obtained by a manufacturing method including a step of applying an impact force to natural graphite particles for pulverization and spheroidization to obtain intermediate particles having a circularity of at least 0.93 and at most 1.0, and a step of carrying out surface smoothing of the resulting intermediate particles by mechanical grinding treatment to obtain the modified natural graphite particles.
    Type: Application
    Filed: March 28, 2011
    Publication date: May 23, 2013
    Applicant: SUMITOMO METAL INDUSTRIES, LTD.
    Inventors: Hiroshi Yamamoto, Tatsuo Nagata, Katsuhiro Nishihara, Noriyuki Negi, Akihiro Yauchi, Tooru Fujiwara
  • Patent number: 8388752
    Abstract: A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5×1017/cm3 and preferably less than 1×1017/cm3 and which is suitable for use in various devices by liquid phase growth using a SiC solution in which the solvent is a melt of a Si alloy employs a Si alloy having a composition which is expressed by SixCryTiz wherein x, y, and z (each in atomic percent) satisfy 0.50<x<0.68, 0.08<y<0.35, and 0.08<z<0.35, or ??(1) 0.40<x?0.50, 0.15<y<0.40, and 0.15<z<0.35.??(2) x, y, and z preferably satisfy 0.53<x<0.65, 0.1<y<0.3, and 0.1<z<0.3.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: March 5, 2013
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventors: Kazuhito Kamei, Kazuhiko Kusunoki, Nobuyoshi Yashiro, Akihiro Yauchi, Shinji Shimosaki
  • Publication number: 20110200833
    Abstract: A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5×1017/cm3 and preferably less than 1×1017/cm3 and which is suitable for use in various devices by liquid phase growth using a SiC solution in which the solvent is a melt of a Si alloy employs a Si alloy having a composition which is expressed by SixCryTiz wherein x, y, and z (each in atomic percent) satisfy 0.50<x<0.68, 0.08<y<0.35, and 0.08<z<0.35, or??(1) 0.40<x?0.50, 0.15<y<0.40, and 0.15<z<0.35.??(2) x, y, and z preferably satisfy 0.53<x<0.65, 0.1<y<0.3, and 0.1<z<0.3.
    Type: Application
    Filed: February 28, 2011
    Publication date: August 18, 2011
    Applicant: SUMITOMO METAL INDUSTRIES, LTD.
    Inventors: Kazuhito KAMEI, Kazuhiko Kusunoki, Nobuyoshi Yashiro, Akihiro Yauchi, Shinji Shimosaki
  • Patent number: 7635413
    Abstract: A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC single crystal is allowed to grow on the seed crystal by gradually cooling the solution or by providing a temperature gradient therein. To this method, accelerated rotation of a crucible is applied by repeatedly accelerating to a prescribed rotational speed and holding at that speed and decelerating to a lower rotational speed or a 0 rotational speed. The rotational direction of the crucible may be reversed each acceleration. The seed shaft may also be rotated synchronously with the rotation of the crucible in the same or opposite rotational as the crucible. A large, good quality single crystal having no inclusions are produced with a high crystal growth rate.
    Type: Grant
    Filed: March 1, 2007
    Date of Patent: December 22, 2009
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventors: Kazuhiko Kusunoki, Kazuhito Kamei, Nobuyoshi Yashiro, Akihiro Yauchi, Yoshihisa Ueda, Yutaka Itoh, Nobuhiro Okada
  • Publication number: 20070209573
    Abstract: A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC single crystal is allowed to grow on the seed crystal by gradually cooling the solution or by providing a temperature gradient therein. To this method, accelerated rotation of a crucible is applied by repeatedly accelerating to a prescribed rotational speed and holding at that speed and decelerating to a lower rotational speed or a 0 rotational speed. The rotational direction of the crucible may be reversed each acceleration. The seed shaft may also be rotated synchronously with the rotation of the crucible in the same or opposite rotational as the crucible. A large, good quality single crystal having no inclusions are produced with a high crystal growth rate.
    Type: Application
    Filed: March 1, 2007
    Publication date: September 13, 2007
    Applicant: Sumitomo Metal Industries, Ltd.
    Inventors: Kazuhiko Kusunoki, Kazuhito Kamei, Nobuyoshi Yashiro, Akihiro Yauchi, Yoshihisa Ueda, Yutaka Itoh, Nobuhiro Okada
  • Patent number: 4474651
    Abstract: A joint for used in connecting oil well casing and/or tubing and method of producing same are disclosed. The joint with improved metal-to-metal sealing properties as well as improved resistance to galling is made of an alloy steel containing 10% or more by weight of Cr and comprises a metal sealing portion and a threaded portion provided with an activating layer of a metal or an alloy selected iron, nickel, zinc, cobalt, copper, manganese, chromium and alloys thereof, and an electrodeposited layer of a metal or an alloy selected from iron, copper, zinc, chromium, nickel, and alloys thereof.
    Type: Grant
    Filed: August 13, 1982
    Date of Patent: October 2, 1984
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventors: Akihiro Yauchi, Minoru Nishihara, Kunihiro Fukui, Hisakazu Kawashima, Yoshiyasu Morita