Abstract: A power module includes: a resin mold; and a lead frame in which a first region is drawn out from a first surface of the resin mold, and a second region extending from the first region in a direction perpendicular to the first surface is sealed inside the resin mold. The first region is bent toward a second surface of the resin mold along the first surface, and the first surface has a shape in which a bending angle is larger than 90 degrees, in which the bending angle is an angle formed by two regions, in the lead frame, adjacent to each other with a bent portion formed by bending the first region interposed in between.

Abstract: A semiconductor module is obtained in which breakage of the semiconductor module can be detected in advance while suppressing increase in manufacturing cost. A semiconductor module includes a semiconductor element, a circuit board, a resistor, a first wiring member, and a detector. The circuit board includes a circuit pattern. The resistor is connected to a surface of the circuit pattern. The first wiring member directly connects the resistor to the semiconductor element. In the first wiring member, at least part of current flowing from the semiconductor element to the circuit pattern flows. The detector is configured to detect at least one of a change of a voltage drop value in the resistor and a change of a current value in the resistor.

Abstract: A semiconductor module is obtained in which breakage of the semiconductor module can be detected in advance while suppressing increase in manufacturing cost. A semiconductor module includes a semiconductor element, a circuit board, a resistor, a first wiring member, and a detector. The circuit board includes a circuit pattern. The resistor is connected to a surface of the circuit pattern. The first wiring member directly connects the resistor to the semiconductor element. In the first wiring member, at least part of current flowing from the semiconductor element to the circuit pattern flows. The detector is configured to detect at least one of a change of a voltage drop value in the resistor and a change of a current value in the resistor.

Abstract: A power module includes an insulated circuit board, a semiconductor element, a first buffer plate, and first and second joining materials. The semiconductor element is disposed on a side of one main surface of the insulated circuit board. The first buffer plate is disposed between the insulated circuit board and the semiconductor element. The first joining material is divided into a plurality of portions in a plan view. The first buffer plate is higher in coefficient of linear expansion than the semiconductor element and lower in coefficient of linear expansion than the insulated circuit board. The first buffer plate is lower in Young's modulus than the semiconductor element.

Abstract: A power module includes a power semiconductor element, an interconnection material, a circuit board, an external terminal, a joining material, and a sealing resin. A clearance portion is continuously formed between the sealing resin and each of an end surface of the joining material and a surface of the interconnection material so as to extend from the end surface of the joining material to the surface of the interconnection material, the end surface of the joining material being located between the power semiconductor element and the interconnection material, the surface of the interconnection material being located between the end surface and a predetermined position of the interconnection material separated by a distance from the end surface.

Abstract: A power module includes an insulated circuit board, a semiconductor element, a first buffer plate, and first and second joining materials. The semiconductor element is disposed on a side of one main surface of the insulated circuit board. The first buffer plate is disposed between the insulated circuit board and the semiconductor element. The first joining material is divided into a plurality of portions in a plan view. The first buffer plate is higher in coefficient of linear expansion than the semiconductor element and lower in coefficient of linear expansion than the insulated circuit board. The first buffer plate is lower in Young's modulus than the semiconductor element.

Abstract: A power module includes a power semiconductor element, an interconnection material, a circuit board, an external terminal, a joining material, and a sealing resin. A clearance portion is continuously formed between the sealing resin and each of an end surface of the joining material and a surface of the interconnection material so as to extend from the end surface of the joining material to the surface of the interconnection material, the end surface of the joining material being located between the power semiconductor element and the interconnection material, the surface of the interconnection material being located between the end surface and a predetermined position of the interconnection material separated by a distance from the end surface.

Abstract: The deposit conveyance mechanism is capable of effectively conveying deposits. The mechanism comprises: a conveying tube 10 having a suction port 12, a vertical tube part 13, a horizontal tube part 14 horizontally extending sideward, the horizontal tube part 14 being held in the water so as to locate below a hydraulic gradient line and vertically moved so as to move the suction port 12 close to and away from the bottom face of the water storing place, by an elevating unit 38, in a prescribed cycle; a cup-shaped member 60 provided to the suction port 12 of the conveying tube 10, the cup-shaped member having a lower part in which the suction port 12 is capable of moving upward and downward; a steam supplying section 73 supplying steam into the cup-shaped member 60; and a compressed gas supplying section 74 supplying a compressed gas into the cup-shaped member 60.