Abstract: An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.

Abstract: An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.

Abstract: An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.

Abstract: An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.

Abstract: An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.

Abstract: An insulating layer (3) is formed on a Si wafer (1). An opening portion is made in this insulating layer (3), and subsequently a rerouting layer (2) is formed. Next, a resin layer (4) is formed on the rerouting layer (2). The resin layer (4) is then cured so that the rerouting layer (2) and a Cu foil (5) are bonded to each other through the resin layer (4). Thereafter, a ring-like opening portion (4a) is made in the resin layer (4), and a Cu plating layer (8) is formed inside this opening portion (4a).

Abstract: A capacitance pressure sensor that prevents leakage from outside the sensor to the reference pressure cavity, has a structure that can decrease defects due to leakage compared to conventional technology. An electrode comprising a thin metallic layer is formed on the upper surface of a glass substrate that forms one of the substrates of a pressure sensor and an external electrode is formed on the surface edge of the substrate. In addition, in the region where the silicon substrate is bonded, a feedthrough extending from the electrode to the external electrode is formed, and spine shaped layers with three braches for blocking leakage gas are formed perpendicularly to the feedthrough.

Abstract: A mixture of titanium dioxide and an oxide or carbonate of barium includes one or more transition metal elements selected from the group of V, Cr, Mn, Fe, Co, Ni and Cu, in the amount of 2 ppm or more. This mixture is used as a starting material. The mixture is heated to a predetermined temperature to make a melt. Then, a seed crystal of BaTiO.sub.3 is brought into contact with the melt under an environment with a low oxygen partial pressure of 0.02 atm. or less. From this state, the above melt is slowly cooled to grow a single crystal on the seed crystal. The thus obtained single crystal is heated in a temperature of 600 .degree. C. or more, under an oxidizing environment with its oxygen partial pressure more than 0.1 atm.

Abstract: An infrared radiation element and a process for producing the same. An aluminum alloy material consists essentially of 0.3 to 4.3 weight % of Mn, balance Al, and impurities. The alluminum alloy material is heated for dispersing a precipitate of an Al--Mn intermetallic compound at a density of at a minimum 1.times.10.sup.5 /mm.sup.3 for a size of 0.1 .mu.m to 3 .mu.m. The heated aluminum alloy material is anodized to form an anodic oxide layer thereon.

Abstract: A copper alloy wire has a composition composed of no less than 0.01% by weight of Ag and balance Cu and unavoidable impurities. The copper alloy wire has been prepared by drawing a wire stock having the composition at a reduction ratio of no lower than 40% and subjecting the wire stock to heat treatment for half annealing to have a tensile strength of no lower than 27 kg.multidot.f/mm.sup.2 and an elongateion of 5%. An insulated elecric wire includes the copper alloy wire as a conductor and an insulation layer covering the wire. Also, a multiple core parallel bonded wire includes two or more such insulated electric wires bonded parallel to each other.