Abstract: A film-thickness measurement apparatus of the present invention includes a lifter, a support mount, a light-emitting device, and a light-receiving device. With the center of a wafer staying in alignment with that of the support mount, the lifter places the wafer onto the surface of the support mount to determine the center of the wafer. While the wafer is being rotated about the center of the wafer, the light-emitting device irradiates the circumferential portion of the wafer with a laser beam, thereby allowing the position of a notch to be detected depending on whether or not the laser beam passes through the notch. This makes it possible to detect the positions of the notch and the center of the wafer to determine the center axis line of the surface of the wafer, thereby allowing the coordinates of a given position on the surface of the wafer to be defined in accordance with the center axis line and the center of the wafer.

Abstract: The thickness of a conductive film formed on a substrate can be measured efficiently at low cost with a film thickness measuring apparatus of the invention, which includes an eddy current coil sensor, disposable at a predetermined position near a conductive film, for generating a predetermined eddy current in the conductive film and for detecting a magnetic field caused by the eddy current. The apparatus also includes a displacement sensor for measuring a displacement between the eddy current coil sensor and the conductive film. The thickness of the conductive film is measured in accordance with a variation in inductance of the eddy current coil sensor and the amount of displacement measured by the displacement sensor.

Abstract: A film-thickness measurement apparatus of the present invention includes a lifter, a support mount, a light-emitting device, and a light-receiving device. With the center of a wafer staying in alignment with that of the support mount, the lifter places the wafer onto the surface of the support mount to determine the center of the wafer. While the wafer is being rotated about the center of the wafer, the light-emitting device irradiates the circumferential portion of the wafer with a laser beam, thereby allowing the position of a notch to be detected depending on whether or not the laser beam passes through the notch. This makes it possible to detect the positions of the notch and the center of the wafer to determine the center axis line of the surface of the wafer, thereby allowing the coordinates of a given position on the surface of the wafer to be defined in accordance with the center axis line and the center of the wafer.

Abstract: The thickness of a conductive film formed on a substrate can be measured efficiently at low cost witha film thickness measuring apparatus of the invention, which includes an eddy current coil sensor, disposable at a predetermined position near a conductive film, for generating a predetermined eddy current in the conductive film and for detecting a magnetic field caused by the eddy current. The apparatus also includes a displacement sensor for measuring a displacement between the eddy current coil sensor and the conductive film. The thickness of the conductive film is measured in accordance with a variation in inductance of the eddy current coil sensor and the amount of displacement measured by the displacement sensor.