Abstract: The present invention relates to a polishing composition used in application in which a polishing object having a cobalt element-containing layer is polished, including: a cobalt dissolution inhibitor; and a pH adjusting agent, wherein the polishing composition has a pH of 4 or more and 12 or less, and the cobalt dissolution inhibitor is at least one member selected from the group consisting of an organic compound having an ether bond, an organic compound having a hydroxyl group, an organic compound having a carboxyl group and having a molecular weight of 130 or more, and salts thereof. According to the present invention, there is provided a polishing composition capable of suppressing the dissolution of a cobalt element-containing layer when a polishing object having a cobalt element-containing layer is polished.

Abstract: To provide a polishing composition which is hard to cause etching or corrosion in a polishing target containing a transition metal having a standard electrode potential of -0.45 V or more and 0.33 V or less even when used for polishing the polishing target. The polishing composition contains abrasives and a metal protecting organic compound. The metal protecting organic compound has an interactive functional group which is a functional group interacting with a polishing target containing a transition metal having a standard electrode potential of ?0.45 V or more and 0.33 V or less and an inhibiting functional group which is a functional group inhibiting the approach of the abrasives toward the polishing target.

Abstract: Provided is a polishing composition which is capable of sufficiently suppressing a polishing speed for a low relative permittivity material. Disclosed is a polishing composition to be used for polishing a material having a relative permittivity of 4 or less, the polishing composition including abrasive grains and an organic compound, the organic compound having a polyoxyalkylene group and an aliphatic hydrocarbon group containing three or more carbon atoms.

Abstract: The present invention relates to a polishing composition used in application in which a polishing object having a cobalt element-containing layer is polished, including: a cobalt dissolution inhibitor; and a pH adjusting agent, wherein the polishing composition has a pH of 4 or more and 12 or less, and the cobalt dissolution inhibitor is at least one member selected from the group consisting of an organic compound having an ether bond, an organic compound having a hydroxyl group, an organic compound having a carboxyl group and having a molecular weight of 130 or more, and salts thereof. According to the present invention, there is provided a polishing composition capable of suppressing the dissolution of a cobalt element-containing layer when a polishing object having a cobalt element-containing layer is polished.

Abstract: To provide a polishing composition, in which a high polishing rate for a barrier layer and an insulation film can sufficiently be maintained, a polishing rate of a low dielectric material can sufficiently be suppressed, and aggregation of abrasive grains can be prevented. The invention is a polishing composition to be used for an application of polishing a polishing object having a barrier layer, a metal wiring layer, and an insulation film, comprising an oxidizing agent, and a nonionic compound having a weight average molecular weight of 1,000 or less.

Abstract: A polishing composition contains colloidal silica particles having protrusions on the surfaces thereof. The average of values respectively obtained by dividing the height of a protrusion on the surface of each particle belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles by the width of a base portion of the same protrusion is no less than 0.245. Preferably, the part of the colloidal silica particles that has larger particle diameter than the volume average particle diameter of the colloidal silica particles has an average aspect ratio of no less than 1.15. Preferably, the protrusions on the surfaces of particles belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles have an average height of no less than 3.5 nm.

Abstract: To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. A polishing composition comprising abrasive grains, a processing accelerator, a nonionic surfactant represented by R-POE (I) (wherein R is a C10-16 alkyl group having a branched structure, and POE is a polyoxyethylene chain) and having an HLB of from 7 to 12, an anionic surfactant, a protective film-forming agent, an oxidizing agent, and water.

Abstract: A polishing composition contains colloidal silica particles having protrusions on the surfaces thereof. The average of values respectively obtained by dividing the height of a protrusion on the surface of each particle belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles by the width of a base portion of the same protrusion is no less than 0.245. Preferably, the part of the colloidal silica particles that has larger particle diameter than the volume average particle diameter of the colloidal silica particles has an average aspect ratio of no less than 1.15. Preferably, the protrusions on the surfaces of particles belonging to the part of the colloidal silica particles that has larger particle diameters than the volume average particle diameter of the colloidal silica particles have an average height of no less than 3.5 nm.

Abstract: To provide a polishing composition which can satisfy both suppression of the surface topography and a high stock removal rate, in a polishing step in the production of a wiring structure. A polishing composition comprising abrasive grains, a processing accelerator, a nonionic surfactant represented by R-POE (I) (wherein R is a C10-16 alkyl group having a branched structure, and POE is a polyoxyethylene chain) and having an HLB of from 7 to 12, an anionic surfactant, a protective film-forming agent, an oxidizing agent, and water.