Patents by Inventor Akihito Yokoi

Akihito Yokoi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photodetector and method for manufacturing photodetector
    Patent number: 8263966
    Abstract: A photodetector 1 according to an embodiment of the present invention includes: an n-type InAs substrate 12; an n-type InAs buffer layer 14 formed on the n-type InAs substrate 12; an n-type InAs light absorbing layer 16 formed on the n-type InAs buffer layer 14; an InAsXPYSb1-X-Y cap layer 18 (X?0, Y>0) formed on the n-type InAs light absorbing layer 16; a first inorganic insulating film 20 formed on the cap layer 18, and having an opening portion 20h in a deposition direction; a p-type impurity semiconductor region 24 fowled by diffusing a p-type impurity from the opening portion 20h of the first inorganic insulating film 20, and reaching from the cap layer 18 to an upper layer of the n-type InAs light absorbing layer 16; and a second inorganic insulating film 22 formed on the first inorganic insulating film 20 and on the p-type impurity semiconductor region 24.
    Type: Grant
    Filed: November 10, 2011
    Date of Patent: September 11, 2012
    Assignee: Hamamatsu Photonics K.K.
    Inventor: Akihito Yokoi
  • PHOTODETECTOR AND METHOD FOR MANUFACTURING PHOTODETECTOR
    Publication number: 20120056243
    Abstract: A photodetector 1 according to an embodiment of the present invention includes: an n-type InAs substrate 12; an n-type InAs buffer layer 14 formed on the n-type InAs substrate 12; an n-type InAs light absorbing layer 16 formed on the n-type InAs buffer layer 14; an InAsXPYSb1-X-Y cap layer 18 (X?0, Y>0) formed on the n-type InAs light absorbing layer 16; a first inorganic insulating film 20 formed on the cap layer 18, and having an opening portion 20h in a deposition direction; a p-type impurity semiconductor region 24 fowled by diffusing a p-type impurity from the opening portion 20h of the first inorganic insulating film 20, and reaching from the cap layer 18 to an upper layer of the n-type InAs light absorbing layer 16; and a second inorganic insulating film 22 formed on the first inorganic insulating film 20 and on the p-type impurity semiconductor region 24.
    Type: Application
    Filed: November 10, 2011
    Publication date: March 8, 2012
    Inventor: Akihito YOKOI
  • Photodetector and method for manufacturing photodetector
    Patent number: 8101940
    Abstract: A photodetector 1 according to an embodiment of the present invention includes: an n-type InAs substrate 12; an n-type InAs buffer layer 14 formed on the n-type InAs substrate 12; an n-type InAs light absorbing layer 16 formed on the n-type InAs buffer layer 14; an InAsXPYSb1-X-Y cap layer 18 (X?0, Y>0) formed on the n-type InAs light absorbing layer 16; a first inorganic insulating film 20 formed on the cap layer 18, and having an opening portion 20h in a deposition direction; a p-type impurity semiconductor region 24 formed by diffusing a p-type impurity from the opening portion 20h of the first inorganic insulating film 20, and reaching from the cap layer 18 to an upper layer of the n-type InAs light absorbing layer 16; and a second inorganic insulating film 22 formed on the first inorganic insulating film 20 and on the p-type impurity semiconductor region 24.
    Type: Grant
    Filed: August 27, 2007
    Date of Patent: January 24, 2012
    Assignee: Hamamatsu Photonics K.K.
    Inventor: Akihito Yokoi
  • PHOTODETECTOR AND METHOD FOR MANUFACTURING PHOTODETECTOR
    Publication number: 20100001358
    Abstract: A photodetector 1 according to an embodiment of the present invention includes: an n-type InAs substrate 12; an n-type InAs buffer layer 14 formed on the n-type InAs substrate 12; an n-type InAs light absorbing layer 16 formed on the n-type InAs buffer layer 14; an InAsXPYSb1-X-Y cap layer 18 (X?0, Y>0) formed on the n-type InAs light absorbing layer 16; a first inorganic insulating film 20 formed on the cap layer 18, and having an opening portion 20h in a deposition direction; a p-type impurity semiconductor region 24 formed by diffusing a p-type impurity from the opening portion 20h of the first inorganic insulating film 20, and reaching from the cap layer 18 to an upper layer of the n-type InAs light absorbing layer 16; and a second inorganic insulating film 22 formed on the first inorganic insulating film 20 and on the p-type impurity semiconductor region 24.
    Type: Application
    Filed: August 27, 2007
    Publication date: January 7, 2010
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventor: Akihito Yokoi