Patents by Inventor Akihito Yoshino

Akihito Yoshino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200194250
    Abstract: There is provided a technique that includes: (a) forming a film on a substrate in a process container by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas from a first pipe made of metal and a first nozzle to the substrate in the process container; supplying an oxygen-containing gas from a second pipe made of metal and a second nozzle to the substrate in the process container; and supplying a nitrogen-and-hydrogen-containing gas from the second pipe and the second nozzle to the substrate in the process container; and (b) forming a continuous fluorine-containing layer on an inner surface of the second pipe by supplying a fluorine-containing gas into the second pipe such that the fluorine-containing gas chemically reacts with the inner surface of the second pipe.
    Type: Application
    Filed: December 12, 2019
    Publication date: June 18, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuhiro HARADA, Masayoshi MINAMI, Akihito YOSHINO, Masaya NISHIDA, Naoko KITAGAWA, Shintaro KOGURA, Shogo OTANI
  • Patent number: 9970112
    Abstract: The substrate processing apparatus includes a reaction chamber configured to accommodate a substrate; a first gas supply unit configured to supply a first process gas containing a silicon element to the substrate; a second gas supply unit configured to supply a second process gas containing a silicon element and a chlorine element to the substrate; an exhaust unit configured to exhaust the first process gas and the second process gas; a cleaning gas bypass supply unit configured to supply a cleaning gas to the exhaust unit; a cleaning monitoring unit installed in the exhaust unit; a gas flow rate control unit configured to adjust an amount of the cleaning gas supplied; and a main control unit configured to control the gas flow rate control unit in response to a signal received from the cleaning gas monitoring unit.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: May 15, 2018
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yasunobu Koshi, Kenichi Suzaki, Akihito Yoshino
  • Publication number: 20150176130
    Abstract: The substrate processing apparatus includes a reaction chamber configured to accommodate a substrate; a first gas supply unit configured to supply a first process gas containing a silicon element to the substrate; a second gas supply unit configured to supply a second process gas containing a silicon element and a chlorine element to the substrate; an exhaust unit configured to exhaust the first process gas and the second process gas; a cleaning gas bypass supply unit configured to supply a cleaning gas to the exhaust unit; a cleaning monitoring unit installed in the exhaust unit; a gas flow rate control unit configured to adjust an amount of the cleaning gas supplied; and a main control unit configured to control the gas flow rate control unit in response to a signal received from the cleaning gas monitoring unit.
    Type: Application
    Filed: March 3, 2015
    Publication date: June 25, 2015
    Inventors: Yasunobu KOSHI, Kenichi SUZAKI, Akihito YOSHINO
  • Patent number: 8999858
    Abstract: The substrate processing apparatus includes a reaction chamber configured to accommodate a substrate; a first gas supply unit configured to supply a first process gas containing a silicon element to the substrate; a second gas supply unit configured to supply a second process gas containing a silicon element and a chlorine element to the substrate; an exhaust unit configured to exhaust the first process gas and the second process gas; a cleaning gas bypass supply unit configured to supply a cleaning gas to the exhaust unit; a cleaning monitoring unit installed in the exhaust unit; a gas flow rate control unit configured to adjust an amount of the cleaning gas supplied; and a main control unit configured to control the gas flow rate control unit in response to a signal received from the cleaning gas monitoring unit.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: April 7, 2015
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Yasunobu Koshi, Kenichi Suzaki, Akihito Yoshino
  • Patent number: 8304328
    Abstract: To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used.
    Type: Grant
    Filed: March 15, 2007
    Date of Patent: November 6, 2012
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Takahiro Maeda, Kiyohiko Maeda, Takashi Ozaki, Akihito Yoshino, Yasunobu Koshi, Yuji Urano
  • Publication number: 20090087964
    Abstract: To realize a high productivity while maintaining excellent film deposition characteristics on a substrate even if a plurality of processing gases of different gas species are used.
    Type: Application
    Filed: March 15, 2007
    Publication date: April 2, 2009
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Takahiro Maeda, Kiyohiko Maeda, Takashi Ozaki, Akihito Yoshino, Yasunobu Koshi, Yuji Urano
  • Publication number: 20090017638
    Abstract: It is intended to provide a substrate processing apparatus and a semiconductor device manufacturing method capable of suppressing formation of a film inside a nozzle and extending a replacement or maintenance cycle of the nozzle, thereby realizing improvement in operation rate of the apparatus.
    Type: Application
    Filed: February 28, 2008
    Publication date: January 15, 2009
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Akihito Yoshino, Takashi Ozaki, Toshihiko Yonejima