Patents by Inventor Akiko Fujita

Akiko Fujita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8058124
    Abstract: The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown on a p-type polycrystalline silicon film exposed in a lower surface of a visor section composed of a multiple-layered film containing a p-type polycrystalline silicon film and a silicon nitride film, while growing the first semiconductor layer on a n-type collector layer, and then the first polycrystalline semiconductor layer is selectively removed.
    Type: Grant
    Filed: April 13, 2010
    Date of Patent: November 15, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Masataka Ono, Akiko Fujita
  • Publication number: 20100197122
    Abstract: The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown on a p-type polycrystalline silicon film exposed in a lower surface of a visor section composed of a multiple-layered film containing a p-type polycrystalline silicon film and a silicon nitride film, while growing the first semiconductor layer on a n-type collector layer, and then the first polycrystalline semiconductor layer is selectively removed.
    Type: Application
    Filed: April 13, 2010
    Publication date: August 5, 2010
    Applicant: NEC ELECTRONICS CORPORATION
    Inventors: Masataka ONO, Akiko FUJITA
  • Patent number: 7728358
    Abstract: The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown on a p-type polycrystalline silicon film exposed in a lower surface of a visor section composed of a multiple-layered film containing a p-type polycrystalline silicon film and a silicon nitride film, while growing the first semiconductor layer on a n-type collector layer, and then the first polycrystalline semiconductor layer is selectively removed.
    Type: Grant
    Filed: August 7, 2008
    Date of Patent: June 1, 2010
    Assignee: NEC Electronics Corporation
    Inventors: Masataka Ono, Akiko Fujita
  • Publication number: 20090304859
    Abstract: It is intended to provide novel compositions usable in improving the flavor of an alcoholic beverage made from grapes typified by wine. Namely, a composition usable in improving the flavor of an alcoholic beverage made from grapes which contains the culture of a strain belonging to a genus Aspergillus, Penicillium, Rhizopus, Rhizomucor, Talaromyces, Mortierella, Cryptococcus, Microbacterium, Corynebacterium or Actinoplanes and being capable of producing diglycosidase.
    Type: Application
    Filed: August 17, 2009
    Publication date: December 10, 2009
    Applicants: Amano Enzyme Inc., National Research Institute of Brewing
    Inventors: Kazutaka Tsuruhami, Hitoshi Amano, Shigeharu Mori, Nami Goto, Isao Aramaki, Akiko Fujita
  • Publication number: 20090039393
    Abstract: The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown on a p-type polycrystalline silicon film exposed in a lower surface of a visor section composed of a multiple-layered film containing a p-type polycrystalline silicon film and a silicon nitride film, while growing the first semiconductor layer on a n-type collector layer, and then the first polycrystalline semiconductor layer is selectively removed.
    Type: Application
    Filed: August 7, 2008
    Publication date: February 12, 2009
    Applicant: NEC ELECTRONICS CORPORATION
    Inventors: Masataka ONO, Akiko FUJITA
  • Publication number: 20050208177
    Abstract: It is intended to provide novel compositions usable in improving the flavor of an alcoholic beverage made from grapes typified by wine. Namely, a composition usable in improving the flavor of an alcoholic beverage made from grapes which contains the culture of a strain belonging to a genus Aspergillus, Penicillium, Rhizopus, Rhizomucor, Talaromyces, Mortierella, Cryptococcus, Microbacterium, Corynebacterium or Actinoplanes and being capable of producing diglycosidase.
    Type: Application
    Filed: April 15, 2003
    Publication date: September 22, 2005
    Inventors: Kazutaka Tsuruhami, Hitoshi Amano, Shigeharu Mori, Nami Goto, Isao Aramaki, Akiko Fujita
  • Patent number: 5606079
    Abstract: A process for producing 1,4-butanedial monoacetal by reacting acrolein acetal with a synthesis gas containing carbon monoxide and hydrogen, in the presence of a rhodium catalyst and an accelerator of formula (I) ##STR1## wherein R.sup.1 and R.sup.2 each, independently, denote a hydrogen atom, a C.sub.1 -C.sub.20 alkyl group or a C.sub.6 -C.sub.20 aryl group, or R.sup.1 and R.sup.2 together form a --(CH.sub.2).sub.n -- group, n is an integer of from 2 to 7, R.sup.3 and R.sup.4 each, independently, denote halogen or a trifluoromethyl group, and p and q are each, independently, an integer of from 0 to 3, which process can also be extended to the hydroformylation of other compounds which contain an olefin group in a terminal position.
    Type: Grant
    Filed: May 30, 1995
    Date of Patent: February 25, 1997
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Shuji Ichikawa, Akiko Fujita, Naoko Sumitani, Yuji Ohgomori