Abstract: A measurement system comprising: a measurement apparatus observing a sample based on an observation condition including parameters; and an observation condition database storing data in which a search key related to the sample and the observation condition, a control unit calculating information on an observation condition of a sample is configured to: receive an observation condition search request including a search key related to a target sample; refer the observation condition database to search for the first data matching or similar to the search key related to the target sample included in the observation condition search request, calculate, based on the searched first data, a candidate observation condition of the measurement apparatus for observing the target sample, and output display data for presenting the candidate observation condition.

Abstract: A measurement system comprising: a measurement apparatus observing a sample based on an observation condition including parameters; and an observation condition database storing data in which a search key related to the sample and the observation condition, a control unit calculating information on an observation condition of a sample is configured to: receive an observation condition search request including a search key related to a target sample; refer the observation condition database to search for the first data matching or similar to the search key related to the target sample included in the observation condition search request, calculate, based on the searched first data, a candidate observation condition of the measurement apparatus for observing the target sample, and output display data for presenting the candidate observation condition.

Abstract: The purpose of the present invention is to provide a multi-coordinated analyzing device that makes it possible to readily observe the same visual field by using a plurality of different kinds of analyzing device and in which observation results for the same visual field are recorded collectively. An analyzing system according to the present invention includes: a first analyzing unit that obtains first observation data by analyzing a sample and that also obtains position information about the analyzed sample; a position setting unit that performs position alignment of the sample on the basis of the position information obtained by the first analyzing unit; and a second analyzing unit that obtains second observation data by analyzing, by using a method different from the method used by the first analyzing unit, the sample placed at the position aligned by the position setting unit (see FIG. 1).

Abstract: Approaches to improving head positioning accuracy in a hard disk drive, by reducing air pressure fluctuations that would otherwise cause unwanted coil torsion in a voice coil actuator, include a voice coil actuator having a streamlined structure configured to affect the flow of air acting upon a coil-supporting arm. The streamlined structure comprises an upper surface and a lower surface, where the upper surface is sloped downward toward the lower surface and the lower surface is sloped upward toward the upper surface.

Abstract: Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

Abstract: Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

Abstract: To provide a process for producing a semiconductor, which can form a CVD film at a high film-forming rate with a good step coverage, good uniformities of film forming rate and sheet resistance in the in-plane region of a wafer and a good reproducibility at every wafers, and an apparatus for treating a semiconductor for the process. In a treating chamber kept under pressure of 1,000-50,000 Pa, a wafer is placed on a susceptor, and a film is deposited on the wafer by heating the wafer at 500° C. or higher by a plate-shaped heater through the susceptor, while supplying a feed gas into the treating chamber at 500-50,000 sccm through gas injection nozzles provided near the center of a shower plate provided approximately in parallel with the wafer at a distance of 1-20 mm from the wafer and kept at a temperature of 200° C. or lower.

Abstract: [Object]

Abstract: To provide a process for producing a semiconductor, which can form a CVD film at a high film-forming rate with a good step coverage, good uniformities of film forming rate and sheet resistance in the in-plane region of a wafer and a good reproducibility at every wafers, and an apparatus for treating a semiconductor for the process. In a treating chamber kept under pressure of 1,000-50,000 Pa, a wafer is placed on a susceptor, and a film is deposited on the wafer by heating the wafer at 500° C. or higher by a plate-shaped heater through the susceptor, while supplying a feed gas into the treating chamber at 500-50,000 sccm through gas injection nozzles provided near the center of a shower plate provided approximately in parallel with the wafer at a distance of 1-20 mm from the wafer and kept at a temperature of 200° C. or lower.