Abstract: A resist composition for deep ultraviolet light comprising (a) one of the following resin components (i)-(iii): (i) a resin which becomes alkali-soluble by eliminating protective groups by the action of an acid, (ii) a combination of an alkali-soluble resin and a dissolution-inhibiting compound, and (iii) a combination of an alkali-soluble resin and a crosslinkable compound, (b) an acid generater, (c) a special anthracene derivative, and (d) a solvent, is suitable for forming a pattern using deep ultraviolet light, KrF excimer laser light, etc., on a highly reflective substrate having level differences due to absorption of undesirable reflected deep ultraviolet light.

Abstract: A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.

Abstract: A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.

Abstract: An acid solution is fed onto a TiN film formed on a semiconductor substrate. So, the TiN film is dipped into the acid solution, whereupon the surface of the semiconductor substrate is neutralized or is made less basic. Then, a chemically amplified resist, containing an acid generator which produces an acid when irradiated with radiant rays and a compound reactive to acids, is applied to the semiconductor substrate, to form a resist film. This is followed by a step for sending radiant rays upon the resist film to expose it. Then, the exposed resist pattern is developed to form a resist pattern without footing or scumming and under-cutting.