Abstract: Heat resistance is improved. A photoelectric conversion element 10 includes an anode 12, a cathode 16, and an active layer 14 provided between the anode and the cathode, in which the active layer contains at least one p-type semiconductor material and at least two n-type semiconductor materials, and a dispersive energy Hansen solubility parameter ?D(P) of the at least one p-type semiconductor material and a first dispersive energy Hansen solubility parameter ?D(Ni) and a second dispersive energy Hansen solubility parameter ?D(Nii) of the at least two n-type semiconductor materials satisfy the following requirements (i) and (ii): 2.1 MPa0.5<|?D(P)??D(Ni)|+|?D(Ni)??D(Nii)|<4.0 MPa0.5??Requirement (i): 0.8 MPa0.5<|?D(P)??D(Ni)| and 0.2 MPa0.

Abstract: To reduce a dark current. In a photoelectric conversion element (10) including an anode (12), a cathode (16), and an active layer (14) provided between the anode and the cathode, the active layer contains a p-type semiconductor material that is a polymer compound having a polystyrene-equivalent weight average molecular weight of 40,000 or more and 200,000 or less, and an n-type semiconductor material. On an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the p-type semiconductor material and a phase of the n-type semiconductor material is 130 ?m or more and less than 200 ?m per square micrometer of the area of the binarized image.

Abstract: To reduce a dark current. In a photoelectric conversion element (10) including an anode (12), a cathode (16), and an active layer (14) provided between the anode and the cathode, the active layer contains a p-type semiconductor material that is a polymer compound having a polystyrene-equivalent weight average molecular weight of 40,000 or more and 200,000 or less, and an n-type semiconductor material. On an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the p-type semiconductor material and a phase of the n-type semiconductor material is 130 ?m or more and less than 200 ?m per square micrometer of the area of the binarized image.

Abstract: A film having excellent optical homogeneity, which is suitably used as an optical film in an image display device, and a method for manufacturing the same. Moreover, an evaluation method which can evaluate the optical homogeneity of the film with a higher precision than in conventional evaluation methods is provided. A film that is a cast film containing a resin having a weight average molecular weight of 200,000 or more, wherein, when line profiles in a direction h and a direction v which are orthogonal to each other in a film inverse space image obtained by Fourier transforming a projection image obtained by a projection method using the cast film are a line profile h and a line profile v.

Abstract: To provide an optical film having improved bending resistance while maintaining optical characteristics, e.g. transparency, total light transmittance, and YI value and so on. An optical film containing a resin and silica fine particles whose average primary particle size measured by image analysis with a scanning electron microscope is not less than 21 nm and not more than 40 nm, wherein the content of the silica fine particles is not less than 15% by mass and not more than 80% by mass based on a total content of the resin and the silica fine particles.

Abstract: Provided is an optical film capable of reducing yellow index, in which the sum of the numbers of concavities each satisfying the following conditions (1) and (2) is 4 or less per 10000 ?m2 of each of one surface of the film and the other surface of the film: (1) The depth of the concavity is 200 nm or more, and (2) The diameter of the part present at the depth of 200 nm or more of the concavity is 0.7 ?m or more.

Abstract: A screening method for detecting renal lesions in diabetic patients not yet exhibiting symptoms of nephropathy, comprising administering a predetermined dose of parathyroid hormone, analogue thereof or derivative thereof to the patients with an albumin excretion rate (AER) of microalbumin being below 15 .mu.g/min., measuring urinary excreted N-acetyl-.beta.-D-glucosaminidase (NAG) and urinary creatinine in urinary samples taken 60.+-.10 minutes before and after administration of PTH, and monitoring the increased ratio of urinary excreted NAG (U/g Cr) in post-administration of PTH to the urinary excreted NAG (U/g Cr) in pre-administration of PTH for a value less than 2.3. The screening method provides the possibility of detecting renal lesions without clinical signs of diabetic nephropathy, using a preparation essentially consisting of active ingredient of PTH.