Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

Abstract: In a method for producing hydrogen and carboxylic acid, a primary alcohol of 1 to 7 carbon atoms and water are reacted by being continuously introduced into a flow reactor packed with a solid catalyst consisting of an alloy of ruthenium and tin on a support and passed through the reactor under temperature and pressure conditions at which the water assumes a gaseous state. This method enables hydrogen and carboxylic acid to be produced in a high yield or at a high purity from a primary alcohol and water in a short time and by simple operations.

Abstract: A stop assist system for moving a moving body to a stop position and making the moving body stop at the stop position includes: an external environment recognizing unit that recognizes an external environment of the moving body; and a moving body control unit that executes a driving process to make the moving body travel to the stop position based on a recognition result of the external environment recognizing unit. The moving body control unit suspends the driving process when, while the moving body is traveling to the stop position, the moving body control unit determines, based on the recognition result, that there is an object within a range of a prescribed lateral threshold value on a lateral outside of the moving body and the object extends over a prescribed longitudinal threshold value or more along a travel direction within the range.

Abstract: A pharmaceutical composition for suppressing neuro-inflammation; a pharmaceutical composition for assisting transplantation of neuron precursor cells, pluripotent stem cells, and/or neurons; a pharmaceutical composition for promoting the stabilization of Nrf2 protein in glial cells; a pharmaceutical composition for protecting nerve cells from neuro-inflammation are provided. Provided is a pharmaceutical composition containing, as an active ingredient, a compound having an inhibiting ability against phosphorylation activity of DYRK1A protein, or a pharmaceutically acceptable salt of the compound.

Abstract: Methods and related systems for topographically depositing a material on a substrate are disclosed. The substrate comprises a proximal surface and a gap feature. The gap feature comprises a sidewall and a distal surface. Exemplary methods comprise, in the given order: a step of positioning the substrate on a substrate support in a reaction chamber; a step of subjecting the substrate to a plasma pre-treatment; and, a step of selectively depositing a material on at least one of the proximal surface and the distal surface with respect to the sidewall. The step of subjecting the substrate to a plasma pre-treatment comprises exposing the substrate to at least one of fluorine-containing molecules, ions, and radicals.

Abstract: Provided is a composition for activating neurogenesis, use of the composition, and a method for preventing, improving, inhibiting the development of, and/or treating a disease or the like of the central nervous system and or the peripheral nervous system using the composition.

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

Abstract: A method of selectively depositing a capping layer structure on a semiconductor device structure is disclosure. The method may include; providing a partially fabricated semiconductor device structure comprising a surface including a metallic interconnect material, a metallic barrier material, and a dielectric material. The method may also include; selectively depositing a first metallic capping layer over the metallic barrier material and over the metallic interconnect material relative to the dielectric material; and selectively depositing a second metallic capping layer over the first metallic capping layer relative to the dielectric material. Semiconductor device structures including a capping layer structure are also disclosed.

Abstract: A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a carbon halide film using reactive species on the target layer on the substrate; and etching the carbon halide film using a plasma of a non-halogen hydrogen-containing etching gas, which plasma alone does not substantially etch the target layer, thereby generating a hydrogen halide as etchant species at a boundary region of the carbon halide film and the target layer, thereby etching a portion of the target layer in the boundary region.

Abstract: Provided is a composition for activating neurogenesis, use of the composition, and a method for preventing, improving, inhibiting the development of, and/or treating a disease or the like of the central nervous system and or the peripheral nervous system using the composition.

Abstract: A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

Abstract: In accordance with the present invention, an implant in which cells are arranged in a fine pattern that is available for immediate implantation and that does not need to be removed after implantation is provided. The present invention relates to a cell-containing sheet, which comprises cells and a support comprising a bioabsorbable material, in which the support has a cell adhesion protein-containing layer on the surface thereof and the cells form a pattern on the support.

Abstract: A method of selectively depositing a capping layer structure on a semiconductor device structure is disclosure. The method may include; providing a partially fabricated semiconductor device structure comprising a surface including a metallic interconnect material, a metallic barrier material, and a dielectric material. The method may also include; selectively depositing a first metallic capping layer over the metallic barrier material and over the metallic interconnect material relative to the dielectric material; and selectively depositing a second metallic capping layer over the first metallic capping layer relative to the dielectric material. Semiconductor device structures including a capping layer structure are also disclosed.

Abstract: A method of reforming an insulating film deposited on a substrate having a recess pattern constituted by a bottom and sidewalls, includes: providing the film deposited on the substrate having the recess pattern in an evacuatable reaction chamber, wherein a property of a portion of the film deposited on the sidewalls is inferior to that of a portion of the film deposited on a top surface of the substrate; adjusting a pressure of an atmosphere of the reaction chamber to 10 Pa or less, which atmosphere is constituted by H2 and/or He without a precursor and without a reactant; and applying RF power to the atmosphere of the pressure-adjusted reaction chamber to generate a plasma to which the film is exposed, thereby reforming the portion of the film deposited on the sidewalls to improve the property of the sidewall portion of the film.

Abstract: In accordance with the present invention, an implant in which cells are arranged in a fine pattern that is available for immediate implantation and that does not need to be removed after implantation is provided. The present invention relates to a cell-containing sheet, which comprises cells and a support comprising a bioabsorbable material, in which the support has a cell adhesion protein-containing layer on the surface thereof and the cells form a pattern on the support.

Abstract: In accordance with the present invention, an implant in which cells are arranged in a fine pattern that is available for immediate implantation and that does not need to be removed after implantation is provided. The present invention relates to a cell-containing sheet, which comprises cells and a support comprising a bioabsorbable material, in which the support has a cell adhesion protein-containing layer on the surface thereof and the cells form a pattern on the support.

Abstract: A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a carbon halide film using reactive species on the target layer on the substrate; and etching the carbon halide film using a plasma of a non-halogen hydrogen-containing etching gas, which plasma alone does not substantially etch the target layer, thereby generating a hydrogen halide as etchant species at a boundary region of the carbon halide film and the target layer, thereby etching a portion of the target layer in the boundary region.

Abstract: A method of reforming an insulating film deposited on a substrate having a recess pattern constituted by a bottom and sidewalls, includes: providing the film deposited on the substrate having the recess pattern in an evacuatable reaction chamber, wherein a property of a portion of the film deposited on the sidewalls is inferior to that of a portion of the film deposited on a top surface of the substrate; adjusting a pressure of an atmosphere of the reaction chamber to 10 Pa or less, which atmosphere is constituted by H2 and/or He without a precursor and without a reactant; and applying RF power to the atmosphere of the pressure-adjusted reaction chamber to generate a plasma to which the film is exposed, thereby reforming the portion of the film deposited on the sidewalls to improve the property of the sidewall portion of the film.

Abstract: Provided is an aqueous ink jet-use ink composition which includes a binder resin, a surfactant, a pigment, a solvent and, if necessary, a pigment-dispersing resin. The binder resin has a glass transition temperature of 40-90° C. and is dispersed as resin emulsion particles. The value of A, which is defined as the sum of the product of the acid value and the content in terms of parts by mass of the binder resin and pigment-dispersing resin, is 0-200 mg KOH/g. The surfactant is a non-ionic compound represented by formula (1), and the content of solvents having boiling points of 250° C. or higher is less than 5 parts by mass relative to 100 parts by mass of the ink composition. R1O—(R2O)n—H??(1) R1 is a straight-chain or branched chain alkyl group having 12-22 carbon atoms. R2 is an ethylene group or propylene group. n is an integer between 10 and 50.