Abstract: There is disclosed a photoelectric conversion device comprising a substrate 1 serving as a lower electrode; first conductivity-type crystalline semiconductor particles 3 deposited on the substrate; second conductivity-type semiconductor layers 4 formed on the crystalline semiconductor particles 3; an insulator layer 2 formed among the crystalline semiconductor particles; and an upper electrode layer 5 formed on the second conductivity-type semiconductor layers 4, wherein the second conductivity-type semiconductor layers 4 each have a smaller thickness at or below an equator of each of the crystalline semiconductor particles than at a zenith region thereof, and the second conductivity-type semiconductor layers 4 include an impurity element with a concentration gradient decreasing with proximity to the crystalline semiconductor particles.

Abstract: A photoelectric conversion device has a structure in which a plurality of crystalline semiconductor particles (3) of one conductivity type each of which has a semiconductor portion (4) of the opposite conductivity type on its surface are joined to a substrate 1 serving as a lower electrode. The substrate (1) and the semiconductor portion (4) are disposed in a state of being separated by a separation portion (6). An insulator (2) is formed between the adjoining crystalline semiconductor particles (3) so as to cover the surface of the substrate (1) and the lower part of the semiconductor portion (4) and so as to expose the upper part of the semiconductor portion (4). An upper electrode (5) is formed so as to cover the insulator (2) and the upper part of the semiconductor portion (4). A short circuit between the upper electrode (5) and the substrate (1) serving as a lower electrode which is caused by the semiconductor portion (4) can be prevented by providing the separation portion (6).

Abstract: There is disclosed a photoelectric conversion device comprising a substrate 1 serving as a lower electrode; first conductivity-type crystalline semiconductor particles 3 deposited on the substrate; second conductivity-type semiconductor layers 4 formed on the crystalline semiconductor particles 3; an insulator layer 2 formed among the crystalline semiconductor particles; and an upper electrode layer 5 formed on the second conductivity-type semiconductor layers 4, wherein the second conductivity-type semiconductor layers 4 each have a smaller thickness at or below an equator of each of the crystalline semiconductor particles than at a zenith region thereof, and the second conductivity-type semiconductor layers 4 include an impurity element with a concentration gradient decreasing with proximity to the crystalline semiconductor particles.