Patents by Inventor Akiko Kotachi
Akiko Kotachi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6329125Abstract: Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a —CH2—R1′ group wherein R1′ is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety.Type: GrantFiled: December 19, 2000Date of Patent: December 11, 2001Assignee: Fujitsu LimitedInventors: Satoshi Takechi, Akiko Kotachi, Koji Nozaki, Ei Yano, Keiji Watanabe, Takahisa Namiki, Miwa Igarashi, Yoko Makino, Makoto Takahashi
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Publication number: 20010003640Abstract: Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a —CH2—R1′ group wherein R1′ is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety.Type: ApplicationFiled: December 19, 2000Publication date: June 14, 2001Applicant: FUJITSU LIMITEDInventors: Satoshi Takechi, Akiko Kotachi, Koji Nozaki, Ei Yano, Keiji Watanabe, Takahisa Namiki, Miwa Igarashi, Yoko Makino, Makoto Takahashi
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Patent number: 6200725Abstract: Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a —CH2—R1′ group wherein R1′ is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety.Type: GrantFiled: November 28, 1997Date of Patent: March 13, 2001Assignee: Fujitsu LimitedInventors: Satoshi Takechi, Akiko Kotachi, Koji Nozaki, Ei Yano, Keiji Watanabe, Takahisa Namiki, Miwa Igarashi, Yoko Makino, Makoto Takahashi
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Patent number: 6013416Abstract: Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble, film-forming compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing a protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition is particularly suitable for excimer laser lithography using an alkaline developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.Type: GrantFiled: June 27, 1996Date of Patent: January 11, 2000Assignee: Fujitsu LimitedInventors: Koji Nozaki, Ei Yano, Keiji Watanabe, Takahisa Namiki, Miwa Igarashi, Yoko Kuramitsu, Satoshi Takechi, Akiko Kotachi, Makoto Takahashi
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Patent number: 5968713Abstract: Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble, film-forming compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing a protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition is particularly suitable for excimer laser lithography using an alkaline developer, and the formed resist patterns can exhibit a high sensitivity and excellent dry etch resistance without swelling.Type: GrantFiled: July 18, 1997Date of Patent: October 19, 1999Assignee: Fujitsu LimitedInventors: Koji Nozaki, Ei Yano, Keiji Watanabe, Takahisa Namiki, Miwa Igarashi, Yoko Kuramitsu, Satoshi Takechi, Akiko Kotachi, Makoto Takahashi
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Patent number: 5856071Abstract: A fine pattern is formed using a resist material including a copolymer of a silicon-containing acrylate and an acrylate which contains a group that is eliminated by an acid, and a photo-acid generator which generates the acid upon irradiation. The polarity of the material changes after elimination of this group and becomes soluble in an aqueous alkali solution.Type: GrantFiled: March 18, 1996Date of Patent: January 5, 1999Assignee: Fujitsu LimitedInventors: Akiko Kotachi, Satoshi Takechi
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Patent number: 5403699Abstract: A pattern formation process using a positive-working resist material of the formula (I): ##STR1## in which R.sup.1 and R.sup.2 may be the same or different, and each represents a substituted or unsubstituted lower alkyl group, X represents a halogen atom, and m and n each is larger than 0 and smaller than 100; and carrying out the development of the selectively exposed resist material with xylene for 10 to 20 minutes, or with other solvent(s). This process effectively obtains fine resist patterns having an increased sensitivity and excellent resolution without a reduction of the layer thickness in an unexposed area of the resist and resist residues in an exposed area of the same.Type: GrantFiled: August 2, 1993Date of Patent: April 4, 1995Assignee: Fujitsu LimitedInventors: Satoshi Takechi, Yuko Nakamura, Akiko Kotachi
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Patent number: 5326670Abstract: A resist composition for forming a upper resist layer and a process for forming a pattern thereby are disclosed. This resist comprises an azide compound and a polyacrylic copolymer of the following formula (1): ##STR1## wherein, R.sub.1 means CH.sub.3, CF.sub.3, CN, CH.sub.2 OH, or CH.sub.2 CO.sub.2 R, wherein R means an alkyl having 1 to 5 carbon atomsR.sub.2 means a hydrocarbon radical having at least one Si,R.sub.3 means OH, O--C(CH.sub.3).sub.3, NH.sub.2 , or NHCH.sub.2 OH, and, a ratio of n to m is more than 0 and is 1 or less than 1.Whereby a finely-resolved resist pattern is obtained by a preset process for forming the resist pattern.Type: GrantFiled: June 7, 1991Date of Patent: July 5, 1994Assignee: Fujitsu LimitedInventors: Akiko Kotachi, Satoshi Takechi
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Patent number: 5192643Abstract: Disclosed is a method of forming a pattern by irradiating a resist, which comprises irradiating a resist composed mainly of a polymer or copolymer comprising structural units represented by the following general formula (1): ##STR1## where R represents a hydrocarbon group containing at least one Si atom, patternwise with an energy beam, and developing the irradiated resist pattern.Type: GrantFiled: January 22, 1991Date of Patent: March 9, 1993Assignee: Fujitsu LimitedInventors: Akiko Kotachi, Satoshi Takechi
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Patent number: 5153103Abstract: A high energy radiation-sensitive, pattern-forming resist composition comprising a polymer of the formula (I): ##STR1## in which R.sub.1 represents an alkyl groups, cyano group, --CH.sub.2 OH or --CH.sub.2 CO.sub.2 R wherein R represents an alkyl group, R.sub.2 represents a hydrocarbon group containing at least one silicon atom, R.sub.3 represents a group capable of causing crosslinking of the polymer upon application of heat, and m and n each is an integer. The resist composition is particularly useful as a top layer resist of the bi-level resist system, and the exposed top layer resist can be stably developed because of a remarkably increased difference of the solubility in the developer of the exposed and unexposed areas thereof.Type: GrantFiled: March 12, 1991Date of Patent: October 6, 1992Assignee: Fujitsu LimitedInventors: Akiko Kotachi, Satoshi Takechi
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Patent number: 5104479Abstract: A positive-type resist material for forming resist patterns having submicron geometries on a substrate, the resist material comprising a copolymer of a first monomer of silicon containing methacrylic ester and a second monomer of either acrylic ester or acrylonitrile, the alpha-position of the second monomer being substituted by an electron attracting group. The first monomer has a high resistance to an oxygen plasma and the second monomer has a high sensitivity to e-beam/X-ray irradiation. As the electron attracting group, a trifluoromethyl group, a halogen group, a cyano group and a CH.sub.2 CO.sub.2 R group are used. The embodied first monomers are trimethylsilylmethyl methacrylate and (diphenylmethylsilyl)methyl methacrylate, and the embodied second monomers are .alpha.-trifluoromethyl (2,2,2-trifluoroethyl) acrylate and .alpha.-chloroacrylonitrile.Type: GrantFiled: October 30, 1990Date of Patent: April 14, 1992Assignee: Fujitsu LimitedInventors: Akiko Kotachi, Satoshi Takechi, Yuko Nakamura
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Patent number: 5066751Abstract: A positive-type resist material for forming resist patterns having submicron geometries on a substrate, the resist material comprising a copolymer of a first monomer of silicon containing methacrylic ester and a second monomer of either acrylic ester or acrylonitrile, the alpha-position of the second monomer being substituted by an electron attracting group. The first monomer has a high resistance to an oxygen plasma and the second monomer has a high sensitivity to e-beam/X-ray irradiation. As the electron attracting group, a trifluoromethyl group, a halogen group, a cyano group and a CH.sub.2 CO.sub.2 R group are used. The embodied first monomers are trimethylsilylmethyl methacrylate and (diphenylmethylsilyl)methyl methacrylate, and the embodied second monomers are .alpha.-trifluoromethyl (2,2,2-trifluoroethyl) acrylate and .alpha.-chloroacrylonitrile.Type: GrantFiled: January 22, 1990Date of Patent: November 19, 1991Assignee: Fujitsu LimitedInventors: Akiko Kotachi, Satoshi Takechi, Yuko Nakamura