Abstract: The present invention relates to a chemical deposition raw material including a heterogeneous polynuclear complex in which a cyclopentadienyl and a carbonyl are coordinated to a first transition metal and a second transition metal as central metals, the chemical deposition raw material being represented by the following formula. In the following formula, the first transition metal (M1) and the second transition metal (M2) are mutually different. The number of cyclopentadienyls (L) is 1 or more and 2 or less, and to the cyclopentadienyl is coordinated one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less as each of substituents R1 to R5. With the chemical deposition raw material of the present invention, a composite metal thin film or a composite metal compound thin film containing plural metals can be formed from a single raw material.

Abstract: An organoplatinum compound with the following formula for use as a raw material in the chemical deposition of platinum compound thin films. In the formula, n is 1 or more and 5 or less. Each of substituents R1 to R5 on the alkenyl amine is a hydrogen atom, an alkyl group or the like and has a carbon number of 4 or less. Each of alkyl anions R6 and R7 is an alkyl group having a carbon number of 1 or more and 3 or less. The vapor pressure of the organoplatinum compound is high enough to allow for the manufacturing of a platinum thin film at low temperature. It also has moderate thermal stability.

Abstract: A heterogeneous polynuclear complex for use as a raw material in the chemical deposition of composite metal or composite metal thin films with the below formula. In the formula, M1 and M2 are mutually different transition metals, x is an integer of 0 or more and 2 or less, y is in integer of 1 or more and 2 or less, z is an integer of 1 or more and 10 or less, R1 to R4 are each one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less, and R5 is a hydrogen atom, a carbonyl, an alkyl group with a carbon number of 1 or more and 7 or less, an allyl group or an allyl derivative. The heterogeneous polynuclear complex allows a composite metal thin film or a composite metal compound thin film containing a plurality of metals to be formed from a single raw material.

Abstract: The present invention relates to a chemical deposition raw material including a heterogeneous polynuclear complex in which a cyclopentadienyl and a carbonyl are coordinated to a first transition metal and a second transition metal as central metals, the chemical deposition raw material being represented by the following formula. In the following formula, the first transition metal (M1) and the second transition metal (M2) are mutually different. The number of cyclopentadienyls (L) is 1 or more and 2 or less, and to the cyclopentadienyl is coordinated one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less as each of substituents R1 to R5. With the chemical deposition raw material of the present invention, a composite metal thin film or a composite metal compound thin film containing plural metals can be formed from a single raw material.

Abstract: The invention provides a raw material for chemical deposition having properties required for a CVD compound, that is, which has a high vapor pressure, can be formed into a film at low temperatures (about 250° C. or less), and also has moderate thermal stability. The invention relates to a raw material for chemical deposition, for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the raw material for chemical deposition including an organoruthenium compound represented by the following formula, in which a cyclohexadienyl group or a derivative thereof and a pentadienyl group or a derivative thereof are coordinated to ruthenium: wherein the substituents R1 to R12 are each independently a hydrogen atom, a linear or cyclic hydrocarbon, an amine, an imine, an ether, a ketone, or an ester, and the substituents R1 to R12 each have 6 or less carbon atoms.

Abstract: The present invention relates to a raw material for chemical deposition shown in a formulae below and including an organoplatinum compound in which diimine containing two imines and an alkyl anion are coordinated to divalent platinum. In the formulae, each of substituents R1 to R4 on the diimine represents a hydrogen atom, an alkyl group or the like and has a carbon number of 5 or less. Each of alkyl anions R5 and R6 is an alkyl group having a carbon number of 1 or more and 3 or less. The raw material has high vapor pressure and low decomposition temperature, and thus it is possible to manufacture a platinum thin film at low temperature.

Abstract: The present invention relates to a chemical deposition raw material including a heterogeneous polynuclear complex in which a cyclopentadienyl and a carbonyl are coordinated to a first transition metal and a second transition metal as central metals, the chemical deposition raw material being represented by the following formula. In the following formula, the first transition metal (Mi) and the second transition metal (M2) are mutually different. The number of cyclopentadienyls (L) is 1 or more and 2 or less, and to the cyclopentadienyl is coordinated one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less as each of substituents R1 to R5. With the chemical deposition raw material of the present invention, a composite metal thin film or a composite metal compound thin film containing plural metals can be formed from a single raw material.

Abstract: The present invention relates to a chemical deposition raw material including a heterogeneous polynuclear complex in which as ligands, at least a diimine and a carbonyl are coordinated to a first transition metal and a second transition metal as central metals, and the chemical deposition raw material is represented by the following formula. In the formula, the first transition metal (M1) and the second transition metal (M2) are mutually different. The number of diimines (L) is 1 or more and 2 or less, and to the diimine is coordinated one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less as each of substituents R1 to R4. With the present chemical deposition raw material, a composite metal thin film or a composite metal compound thin film containing a plurality of metals can be formed from a single raw material.

Abstract: The present invention relates to a raw material for chemical deposition shown in a formulae below and including an organoplatinum compound in which diimine containing two imines and an alkyl anion are coordinated to divalent platinum. In the formulae, each of substituents R1 to R4 on the diimine represents a hydrogen atom, an alkyl group or the like and has a carbon number of 5 or less. Each of alkyl anions R5 and R6 is an alkyl group having a carbon number of 1 or more and 3 or less. The raw material has high vapor pressure and low decomposition temperature, and thus it is possible to manufacture a platinum thin film at low temperature.

Abstract: The present invention relates to a raw material for chemical deposition in a formula shown below and including an organoplatinum compound in which an alkenyl amine and an alkyl anion are coordinated to divalent platinum. In the formula, n is 1 or more and 5 or less. Each of substituents R1 to R5 on the alkenyl amine is a hydrogen atom, an alkyl group or the like and has a carbon number of 4 or less. Each of alkyl anions R6 and R7 is an alkyl group having a carbon number of 1 or more and 3 or less. The raw material has high vapor pressure enough to make possible the manufacturing of a platinum thin film at low temperature and also has moderate thermal stability.

Abstract: An object of the present invention is to provide a purification method to give dodecacarbonyl triruthenium (DCR) which serves as a raw material for chemical vapor deposition and does not cause the contamination of a thin film with impurities even when used to form a ruthenium thin film. The present invention relates to a method in which the dissolved oxygen concentration in the solvent is made 0.2 mg/L or less in at least a dissolution stage, and an organic ruthenium compound including DCR as a raw material for chemical vapor deposition is purified by a recrystallization method. The present invention allows a trace amount of impurities to be separated from DCR. When a ruthenium thin film is formed by use of DCR thus obtained, the formed film is hardly contaminated with impurities. Additionally, the purification method of the present invention is also applicable for recovering/purifying DCR after being used for the formation of a ruthenium thin film.

Abstract: The invention provides a raw material for chemical deposition having properties required for a CVD compound, that is, which has a high vapor pressure, can be formed into a film at low temperatures (about 250° C. or less), and also has moderate thermal stability. The invention relates to a raw material for chemical deposition, for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the raw material for chemical deposition including an organoruthenium compound represented by the following formula, in which a cyclohexadienyl group or a derivative thereof and a pentadienyl group or a derivative thereof are coordinated to ruthenium: wherein the substituents R1 to R12 are each independently a hydrogen atom, a linear or cyclic hydrocarbon, an amine, an imine, an ether, a ketone, or an ester, and the substituents R1 to R12 each have 6 or less carbon atoms.

Abstract: An object of the present invention is to provide a purification method to give dodecacarbonyl triruthenium (DCR) which serves as a raw material for chemical vapor deposition and does not cause the contamination of a thin film with impurities even when used to form a ruthenium thin film. The present invention relates to a method in which the dissolved oxygen concentration in the solvent is made 0.2 mg/L or less in at least a dissolution stage, and an organic ruthenium compound including DCR as a raw material for chemical vapor deposition is purified by a recrystallization method. The present invention allows a trace amount of impurities to be separated from DCR. When a ruthenium thin film is formed by use of DCR thus obtained, the formed film is hardly contaminated with impurities. Additionally, the purification method of the present invention is also applicable for recovering/purifying DCR after being used for the formation of a ruthenium thin film.

Abstract: The present invention provides a method for producing DCR that can efficiently sublimate a large amount of crude DCR to stably supply DCR. Also, the present invention relates to a sublimation apparatus applicable to the production method. The method for producing an organoruthenium compound for a chemical vapor deposition raw material containing dodecacarbonyl triruthenium (DCR) includes the step for purifying DCR by separating impurity elements from crude DCR by a sublimation method, and in the purification step, crude DCR is heated and sublimated in an atmosphere having a carbon monoxide concentration of 30 to 100% and then cooled to precipitate DCR. According to the present invention, a large amount of crude DCR can be efficiently sublimated, and thus a large amount of DCR can be supplied stably.

Abstract: The present invention provides a method for producing DCR that can efficiently sublimate a large amount of crude DCR to stably supply DCR. Also, the present invention relates to a sublimation apparatus applicable to the production method. The method for producing an organoruthenium compound for a chemical vapor deposition raw material containing dodecacarbonyl triruthenium (DCR) includes the step for purifying DCR by separating impurity elements from crude DCR by a sublimation method, and in the purification step, crude DCR is heated and sublimated in an atmosphere having a carbon monoxide concentration of 30 to 100% and then cooled to precipitate DCR. According to the present invention, a large amount of crude DCR can be efficiently sublimated, and thus a large amount of DCR can be supplied stably.