Abstract: A print control apparatus includes an input unit configured to input a binding position of sheets related to a binding processing for the sheets on each of which an image is printed based on print data, a setting unit configured to set a printing position of an auxiliary image of transparent color to be printed with the image that is printed based the print data, according to the binding position of the sheets input by the input unit, and a print control unit configured, based on the printing position of the auxiliary image set by the setting unit, to control printing of the auxiliary image.

Abstract: A print control apparatus includes an input unit configured to input a binding position of sheets related to a binding processing for the sheets on each of which an image is printed based on print data, a setting unit configured to set a printing position of an auxiliary image of transparent color to be printed with the image that is printed based the print data, according to the binding position of the sheets input by the input unit, and a print control unit configured, based on the printing position of the auxiliary image set by the setting unit, to control printing of the auxiliary image.

Abstract: A process for semiconductor device production by which the reliability of connection with bumps can be easily heightened with higher certainty. The process for producing a semiconductor device comprising a substrate having bumps formed thereon, comprises covering the bumps with an adhesive film which has a modulus of elasticity (?55° C.) of from 100 MPa to 5 GPa and has a thickness corresponding to from 5 to 40% of the height of the bumps, and then disposing the adhesive film on the substrate so that the bumps pierce through the adhesive film and come to protrude therefrom.

Abstract: An adhesive film for underfill excellent in relaxation effect of the stress generated in the above semiconductor element and the wiring circuit board and in the connecting electrode parts and also excellent in reliability of electrical connection between the semiconductor element and the wiring circuit board.

Abstract: The present invention provides a thermosetting resin which has a tensile modulus after cure of from 0.001 to 1 GPa at 35° C. and which has a resin flow rate before cure under heat and pressure at 150° C. and 2.94×10?1 MPa of from 5 to 50%.

Abstract: An adhesive film for underfill which relaxes the stress formed in the wiring circuit substrate, semiconductor element and electrode parts for connection. The adhesive film is a quickly hardening type, and forms a highly heat resistant sealing resin layer quickly between the wiring circuit substrate and semiconductor element of a semiconductor device.

Abstract: An adhesive film for underfill excellent in relaxation effect of the stress generated in the above semiconductor element and the wiring circuit board and in the connecting electrode parts and also excellent in reliability of electrical connection between the semiconductor element and the wiring circuit board.

Abstract: A semiconductor device which comprises a substrate and a semiconductor element mounted thereon through bumps by the so-called flip chip method, and in which the semiconductor element has been encapsulated more easily and with higher certainty. A semiconductor device comprising a substrate and a semiconductor element mounted thereon through bumps, wherein the semiconductor element has been encapsulated by coating the back and the edges of the semiconductor element with a thermosetting sheet material having tackiness. Preferably, the tackiness of the sheet material as measured at time of use is from 2 to 15 in terms of ball tack.

Abstract: A process for semiconductor device production by which the reliability of connection with bumps can be easily heightened with higher certainty. The process for producing a semiconductor device comprising a substrate having bumps formed thereon, comprises covering the bumps with an adhesive film which has a modulus of elasticity (−55° C.) of from 100 MPa to 5 GPa and has a thickness corresponding to from 5 to 40% of the height of the bumps, and then disposing the adhesive film on the substrate so that the bumps pierce through the adhesive film and come to protrude therefrom.

Abstract: An adhesive film for underfill which relaxes the stress formed in the wiring circuit substrate, semiconductor element and electrode parts for connection. The adhesive film is a quickly hardening type, and forms a highly heat resistant sealing resin layer quickly between the wiring circuit substrate and semiconductor element of a semiconductor device.

Abstract: An anisotropic conductive film 1 comprising an insulating film 2 and plural conductive paths (3, 4), wherein the plural conductive paths are insulated from each other and penetrate the insulating film 2 in the thickness direction of the film, with both ends of the paths being exposed on both surfaces of the insulating film, and wherein a conductive path 3 capable of contact with an electrode 12 of a semiconductor element 11 and a circuit 14 of a circuit board 13 has at least one end protruding more than an end on the same side of a conductive path incapable of contact with the electrode and the circuit. The ACF of the present invention can prevent a conductive path not involved in electrical connection from being in contact with a part other than an electrode of a semiconductor element and/or a part other than a circuit of a circuit board.

Abstract: A process for producing a semiconductor wafer having an adhesive film, by adhering an adhesive film onto a bump-formed surface of a semiconductor wafer having formed thereon bumps with a predetermined arrangement, which comprises: determining a particular arrangement axis direction in which intervals between adjacent linear arrangement axes connecting the bumps becomes the shortest; and adhering the adhesive film in the direction substantially at a right angle with the determined arrangement axis direction, so as to markedly reduce voids included in the adhesion surface upon adhering an adhesive film such as underfill onto a semiconductor wafer.

Abstract: A process of producing a semiconductor device comprises the steps of:

Abstract: A semiconductor device comprising an anisotropic conductive film and a semiconductor element, wherein the film is bonded to the element on the side comprising an electrode, such that the electrode is electrically connectable to an external circuit via a conductive path in the film. According to the present invention, a conventional mounting apparatus can be used for mounting a chip via ACF. Consequently, the productivity of the mounting process for producing a mounted structure of semiconductor element/ACF/circuit board can be improved.

Abstract: A process for producing a semiconductor wafer having an adhesive film, by adhering an adhesive film onto a bump-formed surface of a semiconductor wafer having formed thereon bumps with a predetermined arrangement, which comprises: determining a particular arrangement axis direction in which intervals between adjacent linear arrangement axes connecting the bumps becomes the shortest; and adhering the adhesive film in the direction substantially at a right angle with the determined arrangement axis direction, so as to markedly reduce voids included in the adhesion surface upon adhering an adhesive film such as underfill onto a semiconductor wafer.

Abstract: A polycarbodiimide represented by the formula (I): wherein R1 is an alkylene group having 2 to 10 carbon atoms, R2 is a divalent aromatic group, R3 is a monovalent aromatic group, k is 0 or an integer of 1 to 30, m is an integer of 2 to 100, and n is 0 or an integer of 1 to 30, a process for preparing the same and uses of the polycarbodiimide. The polycarbodiimide is favorably used in the form of films such as adhesive films for die bonding and adhesive films for underfilling, which can be used in semiconductor devices.

Abstract: An anisotropic conductive film 1 comprising an insulating film 2 and plural conductive paths (3, 4), wherein the plural conductive paths are insulated from each other and penetrate the insulating film 2 in the thickness direction of the film, with both ends of the paths being exposed on both surfaces of the insulating film, and wherein a conductive path 3 capable of contact with an electrode 12 of a semiconductor element 11 and a circuit 14 of a circuit board 13 has at least one end protruding more than an end on the same side of a conductive path incapable of contact with the electrode and the circuit. The ACF of the present invention can prevent a conductive path not involved in electrical connection from being in contact with a part other than an electrode of a semiconductor element and/or a part other than a circuit of a circuit board.

Abstract: An anisotropic conductive film 1 comprising an insulating film 2 and plural conductive paths (3, 4), wherein the plural conductive paths are insulated from each other and penetrate the insulating film 2 in the thickness direction of the film, with both ends of the paths being exposed on both surfaces of the insulating film, and wherein a conductive path 3 capable of contact with an electrode 12 of a semiconductor element 11 and a circuit 14 of a circuit board 13 has at least one end protruding more than an end on the same side of a conductive path incapable of contact with the electrode and the circuit. The ACF of the present invention can prevent a conductive path not involved in electrical connection from being in contact with a part other than an electrode of a semiconductor element and/or a part other than a circuit of a circuit board.

Abstract: A polycarbodiimide represented by the formula (I): 1

Abstract: An aromatic polycarbodiimide comprising a structure represented by the following formula (1) has excellent low moisture resistance, heat resistance and a low dielectric constant: wherein Q is one selected from the group consisting of —CH2—, m is 0 or 1, A is a divalent organic group having 4 or less carbon atoms, Ph is a phenyl group, X's are a hydrogen atom when Q is and the same or different halogen atoms when Q is —CH2—, and n is an integer of 2 to 300.