Patents by Inventor Akimasa Tasaka

Akimasa Tasaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140170497
    Abstract: A problem to be solved is to enhance the charge and discharge characteristics and rate characteristics of a B-type titanium oxide (TiO2(B)) powder by a simple treatment and to provide a B-type titanium oxide powder that can be suitably used as a negative electrode material for a lithium ion battery. A B-type titanium oxide powder is allowed to undergo a reaction under a fluorine-containing gas atmosphere at 0° C. to 200° C. for 1 minute to 10 days to obtain a surface-fluorinated B-type titanium oxide powder. It is preferred that the fluorination treatment is performed at 0.01 atm to 2 atm. It is preferred that a gas containing a fluorine compound selected from a fluorine (F2) gas, a nitrogen trifluoride (NF3) gas, a perfluorotrimethylamine (N(CF3)3) gas, a chlorine trifluoride (ClF3) gas and the like is used as the fluorine-containing gas.
    Type: Application
    Filed: July 26, 2012
    Publication date: June 19, 2014
    Applicants: TOYO TANSO CO., LTD., THE DOSHISHA
    Inventors: Minoru Inaba, Akimasa Tasaka, Morihiro Saito, Mikihiro Takagi, Hitoshi Takebayashi, Yoshio Syodai
  • Publication number: 20100193371
    Abstract: The present invention provides an electrode for electrolysis, wherein the electrode comprises: a substrate comprising an electrically conductive material, wherein the surface of the substrate is made of glassy carbon; and an electrically conductive diamond film with which at least part of the substrate is coated.
    Type: Application
    Filed: February 1, 2010
    Publication date: August 5, 2010
    Applicant: PERMELEC ELECTRODE LTD.
    Inventors: Akimasa TASAKA, Masaharu UNO, Yoshinori NISHIKI, Tsuneto FURUTA
  • Publication number: 20100006449
    Abstract: The present invention provides an electrolytic synthesis method of nitrogen trifluoride, comprising electrolytically synthesizing nitrogen trifluoride gas from ammonium fluoride in an ammonium fluoride-containing molten salt mixture using a carbonaceous electrode as an anode, wherein the method comprises: a step of dissolving, in the molten salt mixture, metal ions capable of electrolytically yielding a highly oxidized metal fluoride through reaction with fluorine radicals (F.) that are generated upon the discharge of fluoride ions which are a component of the ammonium fluoride, thereby reacting the metal ions with the fluorine radicals (F.) to yield the highly oxidized metal fluoride, and reacting the highly oxidized metal fluoride with ammonium ions on a surface of the electrode and in a solution to synthesize nitrogen trifluoride gas.
    Type: Application
    Filed: July 9, 2009
    Publication date: January 14, 2010
    Applicant: PERMELEC ELECTRODE LTD.
    Inventor: Akimasa TASAKA
  • Patent number: 7608235
    Abstract: A carbon electrode for producing gaseous nitrogen trifluoride comprising a dense texture with an average pore size of 0.5 ?m or less is provided. The carbon electrode contains a carbonaceous material, and 3 to 10 wt % of at least one selected from magnesium fluoride and aluminum fluoride which have a melting point not lower than the baking temperature of the carbonaceous material.
    Type: Grant
    Filed: August 3, 2005
    Date of Patent: October 27, 2009
    Assignees: Toyo Tanso Co., Ltd., Mitsui Chemicals, Inc.
    Inventors: Akimasa Tasaka, Masashi Kodama, Udai Tanaka, Hitoshi Takebayashi, Tetsuro Tojo, Atsuhisa Mimoto
  • Publication number: 20080050301
    Abstract: Single-crystal silicon carbide is obtained, which finds a wide variety of applications including semiconductors, and an etching method for single-crystal silicon carbide is provided, by which nitrogen trifluoride plasma is used in single-crystal silicon carbide to obtain a smooth surface. In order to obtain single-crystal silicon carbide having the smoothness (surface roughness) within 150 nm and the material, nitrogen trifluoride-containing gas is subjected to plasma excitation to obtain single-crystal silicon carbide with a smooth surface. It is preferable that the pressure of nitrogen trifluoride gas is in the range of 0.5 to 10 Pa. It is also preferable that the flow rate of the nitrogen trifluoride gas is in the range of 5 to 15 sccm.
    Type: Application
    Filed: July 6, 2005
    Publication date: February 28, 2008
    Applicants: TOYO TANSO CO. LTD., MITSUI CHEMICALS INC., SUMITOMO OSAKA CEMENT CO., LTD.
    Inventors: Akimasa Tasaka, Tetsuro Tojo, Minoru Inaba, Atsuhisa Mimoto, Masamichi Tanaka, Kaori Shima
  • Publication number: 20070199828
    Abstract: It is an object of the present invention to produce a carbon electrode having a texture with decreased pores and having relatively high mechanical strength by only being subjected to a process where a specified metal fluoride is mixed with a carbon material, then the mixture is baked, and to provide a carbon electrode for producing gaseous nitrogen trifluoride having a long life without the polarization of the carbon electrode even in any case of an NH4F—KF—HF series and an NH4F—HF series. The carbon electrode for producing gaseous nitrogen trifluoride of the present invention has a dense texture with an average pore size of 0.5 ?m or less. It is preferable that the carbon electrode contains a carbonaceous material, and at least one of more kinds selected from magnesium fluoride and aluminum fluoride which have a melting point not lower than the baking temperature of the carbonaceous material.
    Type: Application
    Filed: August 3, 2005
    Publication date: August 30, 2007
    Inventors: Akimasa Tasaka, Masashi Kodama, Udai Tanaka, Hitoshi Takebayashi, Tetsuro Tojo, Atsuhisa Mimoto