Abstract: A backlight provides uniform emanating light for a liquid crystal display. In the backlight, light emitted from a light source is incident on a receiving end surface of a light guide plate and emanates through a top surface toward a liquid crystal panel. A bottom surface includes a reflecting hollow wedge extending along the receiving end surface and varying in depth, as measured from the bottom surface, in correspondence with distance from the end surface. A dividing flat portion orthogonal to the reflecting hollow wedge divides the reflecting hollowed portion, and an output surface includes a prism having parallel ridges extending in a direction orthogonal to the receiving end surface.

Abstract: A reflective liquid crystal display device having a structure which makes it possible to provide high contrast even if there is undesired light. The structure includes a light-guiding plate for receiving from a light-incident surface thereof light coming from a light source, and for allowing the light to exit from a bottom surface; a reflective liquid crystal display panel disposed so as to oppose the bottom surface of the light-guiding plate; and a prism disposed on the side of a top surface of an upper substrate of the liquid crystal display panel. The prism has a surface that is substantially perpendicular to the top surface of the upper substrate, and a tilted surface which is tilted towards a side opposite to the light source from a crest line of the substantially perpendicular surface at a tilt angle with respect to an imaginary surface which passes through the crest line of the substantially perpendicular surface and which is parallel to the top surface of the upper substrate.

Abstract: A liquid crystal display device comprising a signal correcting means for correcting a level of an original image signal to a level with which transmittance in a steady state of the pixel with the original image signal is attained within one frame period, a horizontal driving means for applying a voltage in correspondence with the corrected image signal to liquid crystal, and an illumination device for illuminating the display panel with a plurality of light emitting regions thereof, said light emitting regions sequentially turns on and off in synchronization with the application of the corrected image signal while holding a definite time delay thereto.

Abstract: The present invention is directed to provide a driving circuit and driving method for a LCD having high performance of moving image displaying within few amount of memory and downscaled circuit. In the present invention, a voltage applied to a pixel to drive liquid crystal material in the pixel is determined as a voltage with which the transparency of the pixel at the end of the current field becomes the designated transparency. To determine the voltage, a data table for quick response in which output data is stored in correspondence with some of the possible value of a preceding field image data and some of the possible value of the current field image data is employed, and the output data corresponding to the preceding field image data and the current field image data is determined by the data table through linear interpolation. The voltage corresponding to the output data is applied to the pixel.

Abstract: A compact and light weight front light, a reflective liquid crystal display device and a personal digital assistant providing image display of uniform brightness with high efficiency are provided. The front light includes a main optical guide plate and a second optical guide plate. The second optical guide plate is arranged at an end portion of the main optical guide plate along the widthwise direction, and on an end surface opposite to an end surface facing the main optical guide plate, a plurality of prism- shaped grooves are formed along the longitudinal direction, extending in the depth direction. The front light further includes a point light source arranged at an end in the longitudinal direction of the second optical guide plate, and a reflective film covering the surface of the prism-shaped grooves.

Abstract: A liquid crystal panel module includes a liquid crystal panel unit on a backlight unit. The backlight unit preferably has a holding member for holding the liquid crystal panel unit in a specific position on the backlight unit with no gap therebetween. Preferably, the backlight unit comprises a light guide; a lamp for emitting illumination from one side of the light guide; and a reflector for collecting light from the lamp on the light guide. The reflector has a polygonal cross section, a thickness greater than the thickness of the light guide, and is open to only the thickness of the light guide on the light guide side of the reflector.

Abstract: A display panel with a reduced capacitive coupling. The panel includes a transmission type liquid crystal panel. A lamp is provided adjacent at least one side of a light guide plate to guide the light to the crystal panel. A high frequency current supply is used to power the light. A reflective plate encircles the lamp so as to introduce the light to the light guide plate. A housing is made of a thin metal plate. Each portion of the housing is connected with a common electrical potential. Part of the housing extends away from the reflective plate around the lamp or contains an opening in the same location. By this arrangement, the capacitance between the reflective plate and the housing is made smaller thus reducing the leakage current.

Abstract: There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.

Abstract: A liquid crystal panel module includes a backlight unit consisting of a light guide plate having a reflecting sheet at a lower face, a lamp for projecting light to one side of the light guide plate, a reflector for condensing the light from the lamp onto the light guide plate, and a liquid crystal panel having a polarizing plate at a lower face and disposed on the backlight unit. Equilateral prisms are located between the light guide plate and reflecting sheet of the backlight unit in a direction parallel to a polarization axis of the polarizing plate of the liquid crystal panel unit. Each of the prisms has a prism angle so that the angle of incidence of the light guided from the lamp into the light guide plate is the Brewster angle of the prisms.

Abstract: A first glass substrate which is in contact with a liquid crystal layer is etched from its outer face. In this case, a panel to be etched is disposed on a susceptor with the first glass substrate being directed toward a shower head. The etching is carried out by uniformly spraying etchant from the shower head onto a face of the glass substrate.

Abstract: There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.

Abstract: An apparatus for depositing a thin film on a substrate by chemical vapor deposition (CVD) includes a material container for containing a liquid CVD source material; a material feeder for feeding the liquid CVD source material from the material container to a vaporizer while keeping the CVD source material liquid; a vaporizer for vaporizing the liquid CVD source material fed from the material feeder by heating the liquid CVD source material to a high temperature to form a CVD source material gas; a reaction chamber connected to the vaporizer by a pipe for forming a thin film on a substrate using the CVD source material gas; and a thermostatic box surrounding the reaction chamber, wherein both of the vaporizer and piping connecting the vaporizer to the reaction chamber are located within the thermostatic box.

Abstract: A method of depositing a thin film on a substrate by chemical vapor deposition (CVD) including feeding a liquid CVD source material, including a solution in which at least one organometallic complex is dissolved in a solvent, at a constant flow rate to a vaporizer while keeping the CVD source material in a liquid state; vaporizing the liquid CVD source material by heating to form a CVD source material gas; and forming a thin film of a metal oxide on a substrate using the CVD material source gas in a reaction chamber, the thin film including at least titanium, including using TTIP and TiO(Dpm).sub.2 together as the organometallic complex.

Abstract: A CVD method including the steps of: setting a semiconductor wafer on a heating stage within a CVD reaction chamber; and emitting CVD reaction gas towards at least the central major region of the wafer from a first gas blowing region of a gas head provided opposing the wafer and having a plurality of gas blowing regions separated from each other, and simultaneously emitting inert gas towards the peripheral region of the wafer from a second gas blowing region of the gas head, while maintaining the temperature of the wafer at a predetermined temperature, and while maintaining the pressure of the CVD reaction chamber within a range from 100 Torr to atmospheric pressure; whereby a CVD film of high quality can be formed in uniform thickness on the wafer, and the consumed amount of reaction gas and the amount of undesirable precipitated particles can be reduced.

Abstract: There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.

Abstract: There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.

Abstract: There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.

Abstract: A chemical vapor deposition (CVD) apparatus for depositing a thin film on a substrate by CVD has a material container for containing a liquid CVD source material, a material feeder for feeding the liquid CVD source material to a vaporizer for vaporizing the liquid CVD source material, and a reaction chamber for forming the thin film on the substrate using the CVD source material gas. Both the vaporizer and piping between the vaporizer and the reaction chamber are located in a thermostatic box surrounding the reaction chamber. Thus, the structure of the apparatus is simplified and also the heat efficiency of the apparatus is improved.

Abstract: A CVD method including the steps of: setting a semiconductor wafer on a heating stage within a CVD reaction chamber; and emitting CVD reaction gas towards at least the central major region of the wafer from a first gas blowing region of a gas head provided opposing the wafer and having a plurality of gas blowing regions separated from each other, and simultaneously emitting inert gas towards the peripheral region of the wafer from a second gas blowing region of the gas head, while maintaining the temperature of the wafer at a predetermined temperature, and while maintaining the pressure of the CVD reaction chamber within a range from 100 Torr to atmospheric pressure; whereby a CVD film of high quality can be formed in uniform thickness on the wafer, and the consumed amount of reaction gas and the amount of undesirable precipitated particles can be reduced.