Abstract: An oscilator circuit for a integrated circuit memory device to optimize the refresh operating circuit and suppress wasteful power consumption in which the oscillator frequency is set high during high temperatures and the oscillator frequency is set low during low temperatures. A current I1 is generated by means of the current source 100a having characteristics in which it is increased during high temperatures and decreased during low temperatures, and is supplied to the ring oscillator 200.

Abstract: A first periodic pulse is rectified to generate an internal voltage by a charge pump circuit. A level detector is provided for detecting whether or not the internal voltage reaches a desired level. The charge pump circuit is controlled by a controller in accordance with the detection signal so that the internal voltage may take the desired level. A switch element switched by a second periodic pulse is provided in the current path of the level detector. A leakage current path for allowing a lower electric current than the electric current to flow through the former current path is provided between the output terminal of the charge pump circuit and a predetermined power supply terminal.