Abstract: A high-temperature silicon carbide device, along with an integrated circuit including the device and method of fabricating the device are described. For example, the method includes forming one of a source region and a drain region of a silicon carbide metal-oxide-semiconductor device. The method may include forming a gate structure adjacent to either one of the source region and the drain region. The gate structure may include an insulating layer. The method may further include forming the insulating layer with a first growth step performed in a pure oxygen environment and with a second growth step performed in a nitrous oxide environment.

Abstract: A SiC integrated circuit structure which allows multiple power MOSFETs or LDMOSs to exist in the same piece of semiconductor substrate and still function as individual devices which form the components of a given circuit architecture, for example, and not by limitation, in a half-bridge module. In one example, a deep isolation trench is etched into the silicon carbide substrate surrounding each individual LDMOS device. The trench is filled with an insulating material. The depth of the trench may be deeper than the thickness of an epitaxial layer to ensure electrical isolation between the individual epitaxial layer regions housing the individual LDMOSs. The width of the trench may be selected to withstand the potential difference between the bias levels of the body regions of neighboring power LDMOS devices.

Abstract: Fabrication method for a SiC integrated circuit which allows multiple power MOSFETs or LDMOSs to exist in the same piece of semiconductor substrate and still function as individual devices which form the components of a given circuit architecture, for example, and not by limitation, in a half-bridge module. In one example, a deep isolation trench is etched into the silicon carbide substrate surrounding each individual LDMOS device. The trench is filled with an insulating material. The depth of the trench may be deeper than the thickness of an epitaxial layer to ensure electrical isolation between the individual epitaxial layer regions housing the individual LDMOSs. The width of the trench may be selected to withstand the potential difference between the bias levels of the body regions of neighboring power LDMOS devices.

Abstract: A SiC integrated circuit structure which allows multiple power MOSFETs or LDMOSs to exist in the same piece of semiconductor substrate and still function as individual devices which form the components of a given circuit architecture, for example, and not by limitation, in a half-bridge module. In one example, a deep isolation trench is etched into the silicon carbide substrate surrounding each individual LDMOS device. The trench is filled with an insulating material. The depth of the trench may be deeper than the thickness of an epitaxial layer to ensure electrical isolation between the individual epitaxial layer regions housing the individual LDMOSs. The width of the trench may be selected to withstand the potential difference between the bias levels of the body regions of neighboring power LDMOS devices.

Abstract: An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The P-N junction photodiodes include a blanket oxide over the silicon carbide substrate and the gate, an implant extending into the silicon carbide substrate, and an opening extending through the blanket oxide layer down to the silicon carbide substrate on one side of the gate of the P-N junction photodiode.

Abstract: An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), Schottky photodiodes, and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The Schottky photodiodes include another implant in the SiC substrate and a surface metal area configured to pass UV light.

Abstract: An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), Schottky photodiodes, and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The Schottky photodiodes include another implant in the SiC substrate and a surface metal area configured to pass UV light.

Abstract: Disclosed herein is a system and method for wireless proximity-based access to a computing system, which in accordance with certain aspects of an embodiment of the invention includes a small, portable, person-carried or personal-item-carried (e.g., by attachment to a user's key's, purse, knapsack, etc.) wireless transmitter that serves as a “key,” and a wireless receiver configured for attachment to the computing system that serves as a “lock.” The lock may comprise, for example, a USB device that both wirelessly communicates with the key to detect its physical proximity, and communicates with the computer access software that is native on the computing system (e.g., standard WINDOWS username and password authentication processes) to either allow or disallow such computer access software from allowing access to the computing system based upon the physical proximity of the key to the lock.

Abstract: Disclosed herein is a system and method for wireless proximity-based access to a computing system, which in accordance with certain aspects of an embodiment of the invention includes a small, portable, person-carried or personal-item-carried (e.g., by attachment to a user's key's, purse, knapsack, etc.) wireless transmitter that serves as a “key,” and a wireless receiver configured for attachment to the computing system that serves as a “lock.” The lock may comprise, for example, a USB device that both wirelessly communicates with the key to detect its physical proximity, and communicates with the computer access software that is native on the computing system (e.g., standard WINDOWS username and password authentication processes) to either allow or disallow such computer access software from allowing access to the computing system based upon the physical proximity of the key to the lock.

Abstract: A cooling device for a microcircuit provides a direct path of thermal extraction from a high heat producing area to a cooler area. A thermal insulation layer is formed on a body having at least one component thereon that generates the high heat producing area. At least one via is formed through an entire thickness of the insulation layer and is in direct communication with the high heat producing area. Heat from the high heat producing area is channeled through each via to the cooler area, which may be ambient atmosphere or a good thermal conductor, such as a heat sink. A thermal conductive material may be deposited within the via and increase the rate of thermal extraction therethrough.

Abstract: A cooling device for a microcircuit provides a direct path of thermal extraction from a high heat producing area to a cooler area. A thermal insulation layer is formed on a body having at least one component thereon that generates the high heat producing area. At least one via is formed through an entire thickness of the insulation layer and is in direct communication with the high heat producing area. Heat from the high heat producing area is channeled through each via to the cooler area, which may be ambient atmosphere or a good thermal conductor, such as a heat sink. A thermal conductive material may be deposited within the via and increase the rate of thermal extraction therethrough.