Patents by Inventor Akina Yoshimatsu
Akina Yoshimatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9985150Abstract: A graphite substrate is processed to have surface unevenness in a range of 1 ?m to 8 ?m. Thereby, a semiconductor film to be laminated on the graphite substrate has a stable film quality, and thus adhesion of the graphite substrate and the semiconductor layer can be enhanced. When an electron blocking layer is interposed between the graphite substrate and the semiconductor layer, the electron blocking layer is thin and thus the surface unevenness of the graphite substrate is transferred onto the electron blocking layer. Consequently, the electron blocking layer also has surface unevenness approximately in such range. Thus, almost the same effect as a configuration in which the semiconductor layer is directly connected to the graphite substrate can be produced.Type: GrantFiled: February 21, 2011Date of Patent: May 29, 2018Assignee: SHIMADZU CORPORATIONInventors: Toshinori Yoshimuta, Satoshi Tokuda, Koichi Tanabe, Hiroyuki Kishihara, Masatomo Kaino, Akina Yoshimatsu, Toshiyuki Sato, Shoji Kuwabara
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Patent number: 8895341Abstract: A method of manufacturing a radiation detector, comprising: a charge blocking layer generating step of generating a charge blocking layer on a substrate; a CdTe-layer generating step of generating a CdTe layer so as to cover the charge blocking layer on the substrate, the CdTe layer undergoing heterojunction to the charge blocking layer and being composed of a chlorine-doped polycrystalline film; and a heat treatment step of performing a heat treatment on the substrate having the CdTe layer formed thereon.Type: GrantFiled: March 4, 2013Date of Patent: November 25, 2014Assignee: Shimadzu CorporationInventors: Satoshi Tokuda, Toshinori Yoshimuta, Hiroyuki Kishihara, Masatomo Kaino, Akina Yoshimatsu, Takahiro Doki, Toshiyuki Sato
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Patent number: 8871552Abstract: Although Cl (chlorine) is no longer supplied in the course of a first process in which a detecting layer formed by a polycrystalline film or a polycrystalline lamination film by vapor deposition or sublimation is formed, an additional source (e.g., HCl of Cl-containing gas) other than a source is supplied at the start or in the course of the first process. Thus, the detecting layer as the polycrystalline film or the polycrystalline lamination film of CdTe, ZnTe, or CdZnTe can be doped with Cl uniformly in a thickness direction from the start until the end of the first process in film formation. As a result, uniform crystal particles and uniform detection characteristics can be achieved.Type: GrantFiled: February 9, 2011Date of Patent: October 28, 2014Assignees: Shimadzu Corporation, Institute of National Colleges of Technology, JapanInventors: Satoshi Tokuda, Koichi Tanabe, Toshinori Yoshimuta, Hiroyuki Kishihara, Masatomo Kaino, Akina Yoshimatsu, Toshiyuki Sato, Shoji Kuwabara
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Publication number: 20140246744Abstract: A graphite substrate is accommodated into a chamber where vacuum drawing is performed via a pump. Thereafter, carbon is heated under vacuum, whereby impurities in the carbon are evaporated causing the carbon to be purified. The carbon in the graphite substrate is purified, achieving suppression of the impurities as donor/acceptor elements and also metallic elements in the semiconductor layer of 0.1 ppm or less, the impurities being contained in the carbon in the graphite substrate. As a result, occurrence of leak current or an abnormal leak point enables to be suppressed, and thus abnormal crystal growth in the semiconductor layer enables to be suppressed.Type: ApplicationFiled: March 19, 2012Publication date: September 4, 2014Applicant: SHIMADZU CORPORATIONInventors: Masatomo Kaino, Satoshi Tokuda, Toshinori Yoshimuta, Hiroyuki Kishihara, Akina Yoshimatsu, Toshiyuki Sato, Shoji Kuwabara
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Publication number: 20140080243Abstract: A method of manufacturing a radiation detector, comprising: a charge blocking layer generating step of generating a charge blocking layer on a substrate; a CdTe-layer generating step of generating a CdTe layer so as to cover the charge blocking layer on the substrate, the CdTe layer undergoing heterojunction to the charge blocking layer and being composed of a chlorine-doped polycrystalline film; and a heat treatment step of performing a heat treatment on the substrate having the CdTe layer formed thereon.Type: ApplicationFiled: March 4, 2013Publication date: March 20, 2014Applicant: SHIMADZU CORPORATIONInventors: Satoshi TOKUDA, Toshinori YOSHIMUTA, Hiroyuki KISHIHARA, Masatomo KAINO, Akina YOSHIMATSU, Takahiro DOKI, Toshiyuki SATO
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Publication number: 20130115731Abstract: Although Cl (chlorine) is no longer supplied in the course of a first process in which a detecting layer formed by a polycrystalline film or a polycrystalline lamination film by vapor deposition or sublimation is formed, an additional source (e.g., HCl of Cl-containing gas) other than a source is supplied at the start or in the course of the first process. Thus, the detecting layer as the polycrystalline film or the polycrystalline lamination film of CdTe, ZnTe, or CdZnTe can be doped with Cl uniformly in a thickness direction from the start until the end of the first process in film formation. As a result, uniform crystal particles and uniform detection characteristics can be achieved.Type: ApplicationFiled: February 9, 2011Publication date: May 9, 2013Applicant: SHIMADZU CORPORATIONInventors: Satoshi Tokuda, Koichi Tanabe, Toshinori Yoshimuta, Hiroyuki Kishihara, Masatomo Kaino, Akina Yoshimatsu, Toshiyuki Sato, Shoji Kuwabara
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Publication number: 20130026468Abstract: A graphite substrate is processed to have surface unevenness in a range of 1 ?m to 8 ?m. Thereby, a semiconductor film to be laminated on the graphite substrate has a stable film quality, and thus adhesion of the graphite substrate and the semiconductor layer can be enhanced. When an electron blocking layer is interposed between the graphite substrate and the semiconductor layer, the electron blocking layer is thin and thus the surface unevenness of the graphite substrate is transferred onto the electron blocking layer. Consequently, the electron blocking layer also has surface unevenness approximately in such range. Thus, almost the same effect as a configuration in which the semiconductor layer is directly connected to the graphite substrate can be produced.Type: ApplicationFiled: February 21, 2011Publication date: January 31, 2013Applicant: SHIMADZU CORPORATIONInventors: Toshinori Yoshimuta, Satoshi Tokuda, Koichi Tanabe, Hiroyuki Kishihara, Masatomo Kaino, Akina Yoshimatsu, Toshiyuki Sato, Shoji Kuwabara
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Publication number: 20120140881Abstract: A drive controller varies a bias voltage applied from a bias supply to a conversion layer based on the presence or absence of binning, that is, for a case of carrying out binning where switching elements are driven on the basis of a plurality of rows at a time by a gate drive circuit, and for a case of carrying out no binning where the switching elements are driven on a row-by-row basis by the gate drive circuit. Therefore, in the case of a fluoroscopic mode for acquiring images with binning, a lowering of a dynamic range can be suppressed. In the case of a radiographic mode with no binning, spatial resolution can be made high. That is, a high dynamic range and high spatial resolution can be optimized according to modes of operation.Type: ApplicationFiled: October 11, 2011Publication date: June 7, 2012Inventors: Akina Yoshimatsu, Koichi Tanabe, Satoshi Tokuda, Toshinori Yoshimuta, Hiroyuki Kishihara, Masatomo Kaino, Toshiyuki Sato, Shoji Kuwabara