Abstract: A cleaning composition for semiconductor substrates, containing an alkaline compound (A), a corrosion inhibitor (B), and water, wherein the alkaline compound (A) is at least one selected from the group consisting of a quaternary ammonium hydroxide (A1) and potassium hydroxide (A2), and the corrosion inhibitor (B) is at least one selected from the group consisting of 4-substituted pyrazoles, potassium tris(1-pyrazolyl)borohydride, 2-(4-thiazolyl)benzimidazole, and halogenated-8-hydroxyquinolines.

Abstract: A cleaning composition for semiconductor substrates. The cleaning composition comprises hydrogen peroxide, a hydrogen peroxide stabilizing agent, an alkaline compound, and water. The hydrogen peroxide stabilizing agent is oxalic acid, diethylenetriaminepentaacetic acid, hydroxyethyliminodiacetic acid, potassium oxalate, 5-phenyl-1H-tetrazole, triethylenetetraminehexaacetic acid, trans-1,2-cyclohexanediaminetetraacetic acid, 8-quinolinol, L(+)-isoleucine, DL-valine, L(-)-proline, hydroxyethylethylenediaminetriacetic acid, N,N-di(2-hydroxyethyl)glycine, glycine, L-tryptophan, 2,6-pyridinedicarboxylic acid, benzothiazole, or DL-alanine. The alkaline compound is a quaternary ammonium hydroxide or potassium hydroxide.

Abstract: An aqueous composition includes (A) from 0.0001 to 10 mass % of one or more kinds of compounds selected from a C4-13 alkylphosphonic acid, a C4-13 alkylphosphonate ester, a C4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the aqueous composition; and (B) from 0.0001 to 50 mass % of an acid other than the C4-13 alkylphosphonic acid, the C4-13 alkylphosphonate ester and the C4-13 alkyl phosphate or a salt thereof, with respect to the total amount of the aqueous composition.

Abstract: An aqueous composition includes (A) from 0.001 to 20 mass % of one or more kinds of fluorine-containing compounds selected from tetrafluoroboric acid, hexafluorosilicic acid, hexafluoroaluminic acid, hexafluorotitanic acid and a salt thereof, with respect to the total amount of the aqueous composition; and (B) from 0.0001 to 10 mass % of one or more kinds of compounds selected from a C4-13 alkylphosphonic acid, a C4-13 alkylphosphonate ester, a C4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the aqueous composition.

Abstract: The present invention pertains to: a composition capable of removing dry etching residue present on the surface of a semiconductor integrated circuit, while suppressing alumina damage in a production process for the semiconductor integrated circuit; a cleaning method for semiconductor substrates that use alumina; and a production method for a semiconductor substrate having an alumina layer. This composition is characterized by containing 0.00005%-1% by mass of a barium compound (A) and 0.01%-20% by mass of a fluorine compound (B) and having a pH of 2.5-8.0.

Abstract: An aqueous composition may include: (A) a fluoride ion supply source in an amount that gives a fluoride ion concentration of 0.05 to 30 mmol/L in the composition; (B) a cation supply source in an amount that gives a mole ratio of cations of 0.3 to 20 to the fluoride ions in the composition; and (C) 0.0001 to 10 mass % of one or more compounds selected from a C4-13 alkylphosphonic acid, a C4-13 alkylphosphonate ester, a C4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the composition, wherein pH is in a range of from 2 to 6.

Abstract: The present invention relates to: a liquid composition suitable for the washing of a semiconductor element provided with a low-dielectric-constant interlayer insulating film; and a method for washing a semiconductor element. The liquid composition according to the present invention is characterized by containing tetrafluoroboric acid (A) in an amount of 0.01 to 30% by mass, or boric acid (B1) and hydrogen fluoride (B2) at a (boric acid)/(hydrogen fluoride) ratio of (0.0001 to 5.0/by mass)/(0.005 to 5.0% by mass), and having a pH value of 0.0 to 4.0. The liquid composition according to the present invention can reduce the damage of a low-dielectric-constant interlayer insulating film, cobalt or a cobalt alloy, alumina, a zirconia-based hard mask and a silicon nitride during the process of producing a semiconductor integrated circuit, and accordingly can be used suitably for removing dry etching residues occurring on the surface of the semiconductor integrated circuit.

Abstract: An aqueous composition may include: (A) a fluoride ion supply source in an amount that gives a fluoride ion concentration of 0.05 to 30 mmol/L in the composition; (B) a cation supply source in an amount that gives a mole ratio of cations of 0.3 to 20 to the fluoride ions in the composition; and (C) 0.0001 to 10 mass % of one or more compounds selected from a C4-13 alkylphosphonic acid, a C4-13 alkylphosphonate ester, a C4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the composition, wherein pH is in a range of from 2 to 6.

Abstract: An aqueous composition includes (A) from 0.0001 to 10 mass % of one or more kinds of compounds selected from a C4-13 alkylphosphonic acid, a C4-13 alkylphosphonate ester, a C4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the aqueous composition; and (B) from 0.0001 to 50 mass % of an acid other than the C4-13 alkylphosphonic acid, the C4-13 alkylphosphonate ester and the C4-13 alkyl phosphate or a salt thereof, with respect to the total amount of the aqueous composition.

Abstract: The present invention relates to: a liquid composition suitable for the washing of a semiconductor element provided with a low-dielectric-constant interlayer insulating film; and a method for washing a semiconductor element. The liquid composition according to the present invention is characterized by containing tetrafluoroboric acid (A) in an amount of 0.01 to 30% by mass, or boric acid (B1) and hydrogen fluoride (B2) at a (boric acid)/(hydrogen fluoride) ratio of (0.0001 to 5.0/by mass)/(0.005 to 5.0% by mass), and having a pH value of 0.0 to 4.0. The liquid composition according to the present invention can reduce the damage of a low-dielectric-constant interlayer insulating film, cobalt or a cobalt alloy, alumina, a zirconia-based hard mask and a silicon nitride during the process of producing a semiconductor integrated circuit, and accordingly can be used suitably for removing dry etching residues occurring on the surface of the semiconductor integrated circuit.

Abstract: An aqueous composition includes (A) from 0.001 to 20 mass % of one or more kinds of fluorine-containing compounds selected from tetrafluoroboric acid, hexafluorosilicic acid, hexafluoroaluminic acid, hexafluorotitanic acid and a salt thereof, with respect to the total amount of the aqueous composition; and (B) from 0.0001 to 10 mass % of one or more kinds of compounds selected from a C4-13 alkylphosphonic acid, a C4-13 alkylphosphonate ester, a C4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the aqueous composition.

Abstract: The present invention pertains to a protective fluid for alumina, a protection method, and a production method for semiconductor substrate having an alumina layer using same. This alumina protective fluid is characterized by: containing 0.0001%-20% by mass of an alkali earth metal compound; and the alkali earth metal being at least one selected from the group consisting of beryllium, magnesium, strontium, and barium. As a result of the present invention, alumina corrosion can be suppressed during the production process for semiconductor circuits.

Abstract: The present invention pertains to: a composition capable of removing dry etching residue present on the surface of a semiconductor integrated circuit, while suppressing alumina damage in a production process for the semiconductor integrated circuit; a cleaning method for semiconductor substrates that use alumina; and a production method for a semiconductor substrate having an alumina layer. This composition is characterized by containing 0.00005%-1% by mass of a barium compound (A) and 0.01%-20% by mass of a fluorine compound (B) and having a pH of 2.5-8.0.

Abstract: The present invention relates to a wet etching composition for a substrate having a SiN layer and a Si layer, comprising 0.1-50 mass % fluorine compound (A), 0.04-10 mass % oxidant (B) and water (D) and having pH in a range of 2.0-5.0. The present invention also relates to a wet etching process for a semiconductor substrate having a SiN layer and a Si layer, the process using the wet etching composition. The composition of the present invention can be used for a substrate having a SiN layer and a Si layer to enhance removal selectivity of Si over SiN while reducing corrosion of the device and the exhaust line and air pollution caused by a volatile component generated upon use and further a burden on the environment caused by the nitrogen content contained in the composition.

Abstract: The present invention provides a composition for an optical material containing a ring compound (a) represented by formula (1), an episulfide compound (b), and sulfur (c), wherein the content of the ring compound (a) in the composition for an optical material is in the range of 5-70 mass %, the content of the episulfide compound (b) is in the range of 20-90 mass %, and the content of the sulfur (c) is in the range of 1-39 mass %. (In the formula, X represents S, Se or Te. a to f=0 to 3, 8?(a+c+e)?1, 8?(b+d+f)?2, and (b+d+f)?(a+c+e).) This composition for an optical material has a high refractive index as an optical characteristic, and has sufficient heat resistance and good mold release characteristics.

Abstract: The present invention relates to a wet etching composition for a substrate having a SiN layer and a Si layer, comprising 0.1-50 mass % fluorine compound (A), 0.04-10 mass % oxidant (B) and water (D) and having pH in a range of 2.0-5.0. The present invention also relates to a wet etching process for a semiconductor substrate having a SiN layer and a Si layer, the process using the wet etching composition. The composition of the present invention can be used for a substrate having a SiN layer and a Si layer to enhance removal selectivity of Si over SiN while reducing corrosion of the device and the exhaust line and air pollution caused by a volatile component generated upon use and further a burden on the environment caused by the nitrogen content contained in the composition.

Abstract: The present invention provides a composition for an optical material containing a ring compound (a) represented by formula (1), an episulfide compound (b), and sulfur (c), wherein the content of the ring compound (a) in the composition for an optical material is in the range of 5-70 mass %, the content of the episulfide compound (b) is in the range of 20-90 mass %, and the content of the sulfur (c) is in the range of 1-39 mass %. (In the formula, X represents S, Se or Te. a to f=0 to 3, 8?(a+c+e)?1, 8?(b+d+f)?2, and (b+d+f)?(a+c+e).) This composition for an optical material has a high refractive index as an optical characteristic, and has sufficient heat resistance and good mold release characteristics.

Abstract: Through an optical material composition containing a compound (a), a compound (b), a polythiol (c) and sulfur (d) according to the present invention, good mold release properties are obtained, and the occurrence of separation mark defects can be suppressed. Compound (a): a compound having the structure represented by formula (1): (In formula (1), m is an integer of 0 to 4 and n is an integer of 0 to 2.) Compound (b): a compound having the structure represented by formula (2): (In formula (2), m is an integer of 0 to 4 and n is an integer of 0 to 2.

Abstract: Through an optical material composition containing a compound (a), a compound (b), a polythiol (c) and sulfur (d) according to the present invention, good mold release properties are obtained, and the occurrence of separation mark defects can be suppressed. Compound (a): a compound having the structure represented by formula (1): (In formula (1), m is an integer of 0 to 4 and n is an integer of 0 to 2.) Compound (b): a compound having the structure represented by formula (2): (In formula (2), m is an integer of 0 to 4 and n is an integer of 0 to 2.

Abstract: The present invention is able to provide an optical material composition containing: a polythiol compound satisfying one of the below mentioned i) through iii); and a polyepoxy compound and/or a polyepisulfide compound of which i) the ammonium cation concentration is 0.1-150 ?mol/kg, ii) the thiocyanate anion concentration is 0.1-300 ?mol/kg, or iii) the ammonium cation concentration is 0.1-150 ?mol/kg, the thiocyanate anion concentration is 0.1-300 ?mol/kg, and furthermore the ion concentration product of the ammonium cations and the thiocyanate anions is 0.01-15000 (?mol/kg)2.