Patents by Inventor Akinobu Manabe

Akinobu Manabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5956593
    Abstract: An improved semiconductor device including an MOS capacitance is provided, having enhanced MOS capacitance accuracy. A well of a first conductivity type is formed at the main surface of a semiconductor substrate. The above-described well is removed immediately under a capacitance dope layer.
    Type: Grant
    Filed: May 27, 1998
    Date of Patent: September 21, 1999
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Masaki Kijima, Akinobu Manabe
  • Patent number: 5773860
    Abstract: An improved semiconductor device including an MOS capacitance is provided, having enhanced MOS capacitance accuracy. A well of a first conductivity type is formed at the main surface of a semiconductor substrate. The above-described well is removed immediately under a capacitance dope layer.
    Type: Grant
    Filed: February 5, 1997
    Date of Patent: June 30, 1998
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Masaki Kijima, Akinobu Manabe