Abstract: A resistance heater is shown and described. The resistance heater may include a body. The body may include at least one heating surface, the heating surface being generally smooth and generally flat and a recess formed in the body, at least a portion of the body having a cross-sectional shape selected from the group consisting of: generally U shape, generally I-shape, and generally H-shape, and where the cross-sectional shape extends along at least a portion of the body.

Abstract: A resistance heater is shown and described. The resistance heater may include a body. The body may include at least one heating surface, the heating surface being generally smooth and generally flat and a recess formed in the body, at least a portion of the body having a cross-sectional shape selected from the group consisting of: generally U shape, generally I-shape, and generally H-shape, and where the cross-sectional shape extends along at least a portion of the body.

Abstract: A heater has a smooth heating surface and a recess formed on a second surface opposite to the heating surface. The recess is formed between opposite side walls in a lengthwise direction of the heater. Formation of the recess improves the electrical resistance of the heater and the opposite side walls reinforce the heater and prevent deformation of the heater when it is subjected to high temperatures in a semiconductor wafer processing device. The heater has substantially the same width along its lengthwise direction. This improves the control of heat pattern design, because the terminal end portions do not have an expanded shape.

Abstract: A heater has a smooth heating surface and a recess formed on a second surface opposite to the heating surface. The recess is formed between opposite side walls in a lengthwise direction of the heater. Formation of the recess improves the electrical resistance of the heater and the opposite side walls reinforce the heater and prevent deformation of the heater when it is subjected to high temperatures in a semiconductor wafer processing device. The heater has substantially the same width along its lengthwise direction. This improves the control of heat pattern design, because the terminal end portions do not have an expanded shape.

Abstract: An electrostatic chuck comprises a main body with a mounting surface and an opposed surface facing away from the mounting surface. At least one chucking electrode extends along the mounting surface of the main body and a first heater layer extends along the opposed surface of the main body. The electrostatic chuck can be used to heat and electrostatic ally attract a work piece, such as a wafer, to a work piece support surface during various processing techniques.

Abstract: An etch resistant heater for use in a wafer processing assembly with an excellent ramp rate of at least 20° C. per minute. The heater is coated with a protective overcoating layer allowing the heater to have a radiation efficiency above 70% at elevated heater temperatures of >1500° C., and an etch rate in NF3 at 600° C. of less than 100 A/min.

Abstract: An electrostatic chuck comprises a main body with a mounting surface and an opposed surface facing away from the mounting surface. At least one chucking electrode extends along the mounting surface of the main body and a first heater layer extends along the opposed surface of the main body. The electrostatic chuck can be used to heat and electrostatic ally attract a work piece, such as a wafer, to a work piece support surface during various processing techniques.