Abstract: A semiconductor device including a first electrode, a second electrode, an oxide semiconductor disposed between the first electrode and the second electrode, and a first oxide layer containing a predetermined element, oxygen, and an additional element and disposed between the first electrode and the oxide semiconductor, wherein the predetermined element is at least one of tantalum, boron, hafnium, silicon, zirconium, or niobium, and the additional element is at least one of phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.

Abstract: A laminated ceramic electronic component includes a ceramic substrate, an internal electrode, and a buffer layer. The ceramic substrate includes a protective layer and a functional layer. The protective layer is disposed on at least one side of the functional layer. The internal electrode is embedded in the functional layer. The buffer layer is embedded in the protective layer and has a different burning shrinkage from the ceramic substrate.

Abstract: Internal electrode layers are superimposed in a dielectric substrate 1 at intervals. Step absorption layers are respectively provided on lateral sides of the internal electrode layers. A side portion of the internal electrode layer forms an inclined surface, and the step absorption layer is superimposed so as to partially overlap the inclined surface of the internal electrode layer. This is also applied to the other internal electrode layers and step absorption layers.

Abstract: An apparatus for evaporating vapor-deposition material includes a vapor-deposition vessel with a depth greater than or equal to a predetermined value. The apparatus for evaporating vapor-deposition material further includes a heating means for heating the vapor-deposition material held in the vapor-deposition vessel so that the vapor-deposition material has a temperature gradient decreasing in the depth direction of the vapor-deposition vessel toward the bottom of the vessel.

Abstract: A multilayer electronic component comprises an inner multilayer portion and a pair of outer multilayer portions. The inner multilayer portion includes a plurality of first ceramic layers and a plurality of internal circuit element conductors which are alternately laminated and contain a glass component. A component amount ratio of an amount of the glass component in the second ceramic layers to an amount of a principal component of the second ceramic layers is larger than a component amount ratio of an amount of the glass component in the first ceramic layers to an amount of a principal component of the first ceramic layers.

Abstract: Internal electrode layers are superimposed in a dielectric substrate 1 at intervals. Step absorption layers are respectively provided on lateral sides of the internal electrode layers. A side portion of the internal electrode layer forms an inclined surface, and the step absorption layer is superimposed so as to partially overlap the inclined surface of the internal electrode layer. This is also applied to the other internal electrode layers and step absorption layers.

Abstract: A laminated ceramic electronic component includes a ceramic substrate, an internal electrode, and a buffer layer. The ceramic substrate includes a protective layer and a functional layer. The protective layer is disposed on at least one side of the functional layer. The internal electrode is embedded in the functional layer. The buffer layer is embedded in the protective layer and has a different burning shrinkage from the ceramic substrate.