Abstract: A light emitting element includes: a semiconductor structure including an n-side layer, a p-side layer, and an active layer, each being made of a nitride semiconductor, wherein the active layer is positioned between the n-side layer and the p-side layer and is configured to emit ultraviolet light; an n-electrode electrically connected to the n-side layer; and a p-electrode comprising a first metal layer in contact with the p-side layer and electrically connected to the p-side layer. The p-side layer comprises a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer, each containing a p-type impurity. A surface of the second layer includes an exposed region that is exposed from the third layer. The first layer and the second layer contain Al.

Abstract: A light-emitting element includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a first electrode, and a second electrode. The first semiconductor layer includes gallium and nitrogen and is of an n-type. The second semiconductor layer includes gallium and nitrogen and is of a p-type. The light-emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. The first semiconductor layer includes a first partial region and a first side surface region. The first partial region includes a first surface contacting the first electrode. The first side surface region includes a first side surface crossing a plane perpendicular to a first direction. The first direction is from the second semiconductor layer toward the first semiconductor layer.

Abstract: A method for manufacturing a light-emitting element includes: a preparation process including preparing a semiconductor stacked body that includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer, the first semiconductor layer including a semiconductor of a first conductivity type, the second semiconductor layer including a semiconductor of a second conductivity type; a first layer formation process including forming a first layer on the first semiconductor layer, the first layer being made of an insulating material; a removal process including removing a portion of the first semiconductor layer and a portion of the first layer; a processing process including introducing oxygen into a portion of the first semiconductor layer that includes a first surface formed in the removal process, the introducing being performed by, after the removal process, processing the semiconductor stacked body in an atmosphere including oxygen.

Abstract: A method for manufacturing a semiconductor element includes: providing a nitride semiconductor layer; performing plasma treatment to at least part of a surface of the nitride semiconductor layer in an oxygen-containing atmosphere while applying bias power; after the performing of the plasma treatment, heat treating the nitride semiconductor layer in an oxygen-containing atmosphere; forming a protective film on a region of the surface of the nitride semiconductor layer where the plasma treatment was performed; and forming an electrode in a region of the surface of the nitride semiconductor layer where the protective film was not formed.

Abstract: A light-emitting element includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a first electrode, and a second electrode. The first semiconductor layer includes gallium and nitrogen and is of an n-type. The second semiconductor layer includes gallium and nitrogen and is of a p-type. The light-emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. The first semiconductor layer includes a first partial region and a first side surface region. The first partial region includes a first surface contacting the first electrode. The first side surface region includes a first side surface crossing a plane perpendicular to a first direction. The first direction is from the second semiconductor layer toward the first semiconductor layer.

Abstract: A method for manufacturing a semiconductor element includes: providing a nitride semiconductor layer; performing plasma treatment to at least part of a surface of the nitride semiconductor layer in an oxygen-containing atmosphere while applying bias power; after the performing of the plasma treatment, heat treating the nitride semiconductor layer in an oxygen-containing atmosphere; forming a protective film on a region of the surface of the nitride semiconductor layer where the plasma treatment was performed; and forming an electrode in a region of the surface of the nitride semiconductor layer where the protective film was not formed.

Abstract: A method for manufacturing a light-emitting element includes: a preparation process including preparing a semiconductor stacked body that includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer, the first semiconductor layer including a semiconductor of a first conductivity type, the second semiconductor layer including a semiconductor of a second conductivity type; a first layer formation process including forming a first layer on the first semiconductor layer, the first layer being made of an insulating material; a removal process including removing a portion of the first semiconductor layer and a portion of the first layer; a processing process including introducing oxygen into a portion of the first semiconductor layer that includes a first surface formed in the removal process, the introducing being performed by, after the removal process, processing the semiconductor stacked body in an atmosphere including oxygen.