Patents by Inventor Akinori Kitamura
Akinori Kitamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11968806Abstract: An electronic apparatus includes: a chassis; first and second heating elements in the chassis; and a cooling module absorbing the heat. The cooling module includes: a first vapor chamber connected to the first heating element; and a second vapor chamber connected to the second heating element. The first and second vapor chambers are placed adjacent to each other with a step therebetween. The first vapor chamber has a bridge that is a part of at least one of the two first metal plates, the bridge straddling the step and extending toward the second vapor chamber to be connected to a surface of the second vapor chamber. The bridge is not provided with the closed space.Type: GrantFiled: June 2, 2022Date of Patent: April 23, 2024Assignee: LENOVO (SINGAPORE) PTE. LTD.Inventors: Masahiro Kitamura, Yusuke Onoue, Takuroh Kamimura, Akinori Uchino
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Patent number: 11963333Abstract: An electronic apparatus includes: a chassis; a heat generating element provided in the chassis; and a cooling device that has a cooling fin, a heat pipe connecting the cooling fin and the heat generating element, and a pressing assembly pressing the heat pipe against the heat generating element, and is provided in the chassis. The heat pipe has: a heat absorbing section that absorbs heat generated by the heat generating element; and a thin plate section having a thickness which is smaller than that of the heat absorbing section. The pressing assembly has: a base assembly relatively fixed to the chassis; and a bridge section that is provided integrally with the base assembly and placed on a surface of the thin plate section in such a manner as to extend over the heat pipe in a width direction.Type: GrantFiled: March 29, 2022Date of Patent: April 16, 2024Assignee: LENOVO (SINGAPORE) PTE. LTD.Inventors: Masahiro Kitamura, Akinori Uchino, Shusaku Tomizawa
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Patent number: 10672622Abstract: An etching method includes loading, first and second supplying, removing and etching steps. In the loading step, a target object is loaded into a chamber. In the first supply step, a first gas containing carbon, hydrogen and fluorine is supplied into the chamber. In the modification step, plasma of the first gas is generated to modify a surface of a mask film and a surface of an organic film which is not covered with the mask film. In the second supply step, a second gas for etching the organic film is supplied into the chamber. In the removal step, a modified layer formed on the surface of the organic film is removed by applying a first high frequency bias power. In the etching step, the organic film below the modified layer is etched by applying a second high frequency bias power lower than the first high frequency bias power.Type: GrantFiled: August 29, 2018Date of Patent: June 2, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Yusuke Shimizu, Akinori Kitamura, Masahiko Takahashi
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Publication number: 20190067031Abstract: An etching method includes loading, first and second supplying, removing and etching steps. In the loading step, a target object is loaded into a chamber. In the first supply step, a first gas containing carbon, hydrogen and fluorine is supplied into the chamber. In the modification step, plasma of the first gas is generated to modify a surface of a mask film and a surface of an organic film which is not covered with the mask film. In the second supply step, a second gas for etching the organic film is supplied into the chamber. In the removal step, a modified layer formed on the surface of the organic film is removed by applying a first high frequency bias power. In the etching step, the organic film below the modified layer is etched by applying a second high frequency bias power lower than the first high frequency bias power.Type: ApplicationFiled: August 29, 2018Publication date: February 28, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Yusuke SHIMIZU, Akinori KITAMURA, Masahiko TAKAHASHI
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Patent number: 10121674Abstract: Disclosed is a method of etching a silicon layer by removing an oxide film formed on a workpiece which includes the silicon layer and a mask provided on the silicon layer. The method includes: (a) forming a denatured region by generating plasma of a first processing gas containing hydrogen, nitrogen, and fluorine within a processing container accommodating the workpiece therein to denature an oxide film formed on a surface of the workpiece; (b1) removing the denatured region by generating plasma of a rare gas within the processing container; and (c) etching the silicon layer by generating plasma of a second processing gas within the processing container.Type: GrantFiled: July 20, 2017Date of Patent: November 6, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Akinori Kitamura, Eiji Suzuki
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Publication number: 20170323796Abstract: Disclosed is a method of etching a silicon layer by removing an oxide film formed on a workpiece which includes the silicon layer and a mask provided on the silicon layer. The method includes: (a) forming a denatured region by generating plasma of a first processing gas containing hydrogen, nitrogen, and fluorine within a processing container accommodating the workpiece therein to denature an oxide film formed on a surface of the workpiece; (b1) removing the denatured region by generating plasma of a rare gas within the processing container; and (c) etching the silicon layer by generating plasma of a second processing gas within the processing container.Type: ApplicationFiled: July 20, 2017Publication date: November 9, 2017Applicant: TOKYO ELECTRON LIMITEDInventors: Akinori KITAMURA, Eiji SUZUKI
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Patent number: 9779954Abstract: Disclosed is a method of etching a silicon layer by removing an oxide film formed on a workpiece which includes the silicon layer and a mask provided on the silicon layer. The method includes: (a) forming a denatured region by generating plasma of a first processing gas containing hydrogen, nitrogen, and fluorine within a processing container accommodating the workpiece therein to denature an oxide film formed on a surface of the workpiece; (b1) removing the denatured region by generating plasma of a rare gas within the processing container; and (c) etching the silicon layer by generating plasma of a second processing gas within the processing container.Type: GrantFiled: December 2, 2014Date of Patent: October 3, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Akinori Kitamura, Eiji Suzuki
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Patent number: 9711371Abstract: An organic film can be etched while suppressing damage on an underlying layer. A method of etching the organic film includes etching the organic film within a processing vessel of a plasma processing apparatus which accommodates a processing target object. A processing gas containing a hydrogen gas and a nitrogen gas is supplied into the processing vessel, and plasma of the processing gas is generated. Further, a flow rate ratio of the hydrogen gas to a flow rate of the processing gas is set to be in a range from 35% to 75%, and a high frequency bias power for ion attraction to the processing target object is set to be in a range from 50 W to 135 W, in the etching of the organic film.Type: GrantFiled: October 29, 2015Date of Patent: July 18, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Akinori Kitamura, Kosuke Kariu, Toshihisa Ozu, Hai Woo Lee
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Patent number: 9570312Abstract: Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage (3) to 100° C. or greater.Type: GrantFiled: May 29, 2013Date of Patent: February 14, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Ryohei Takeda, Mitsuhiro Tomura, Akinori Kitamura, Shinji Higashitsutsumi, Hiroto Ohtake, Takashi Tsukamoto
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Patent number: 9502537Abstract: Provided is a method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed of silicon. The method performs a plurality of sequences. Each sequence includes: forming a denatured region by generating plasma of a processing gas that contains hydrogen, nitrogen, and fluorine within a processing container that accommodates the workpiece so as to denature a portion of the first region, and removing the denatured region within the processing container. In addition, a sequence subsequent to a predetermined number of sequences after a first sequence among the plurality of sequences further includes exposing the workpiece to plasma of a reducing gas which is generated within the processing container, prior to the forming of the denatured region.Type: GrantFiled: August 27, 2014Date of Patent: November 22, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Akinori Kitamura, Hiroto Ohtake, Eiji Suzuki
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Patent number: 9412607Abstract: An isotropic etching process can be performed with high uniformity. A plasma etching method of etching an etching target layer containing silicon includes preparing a processing target object having the etching target layer in a processing chamber; removing an oxide film on a surface of the etching target layer by generating plasma of a first processing gas that contains a fluorocarbon gas or a fluorohydrocarbon gas but does not contain oxygen; removing a carbon-based reaction product generated when the removing of the oxide film by generating plasma of a second processing gas that does not contain oxygen; and etching the etching target layer without applying a high frequency bias power to a lower electrode serving as a mounting table configured to mount the processing target object thereon by generating plasma of a third processing gas containing a fluorocarbon gas or a fluorohydrocarbon gas with a microwave.Type: GrantFiled: May 7, 2014Date of Patent: August 9, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Tomiko Kamada, Akinori Kitamura, Hiroto Ohtake, Yutaka Osada, Yuji Otsuka, Masayuki Kohno, Yusuke Takino, Eiji Suzuki
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Publication number: 20160126071Abstract: An organic film can be etched while suppressing damage on an underlying layer. A method of etching the organic film includes etching the organic film within a processing vessel of a plasma processing apparatus which accommodates a processing target object. A processing gas containing a hydrogen gas and a nitrogen gas is supplied into the processing vessel, and plasma of the processing gas is generated. Further, a flow rate ratio of the hydrogen gas to a flow rate of the processing gas is set to be in a range from 35% to 75%, and a high frequency bias power for ion attraction to the processing target object is set to be in a range from 50 W to 135 W, in the etching of the organic film.Type: ApplicationFiled: October 29, 2015Publication date: May 5, 2016Inventors: Akinori Kitamura, Kosuke Kariu, Toshihisa Ozu, Hai Woo Lee
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Patent number: 9289651Abstract: The invention provides a resin composition for golf balls having excellent resilience, flexibility and fluidity, and golf balls having excellent resilience and shot feel.Type: GrantFiled: July 29, 2013Date of Patent: March 22, 2016Assignee: DUNLOP SPORTS CO. LTD.Inventors: Akinori Kitamura, Kazuyoshi Shiga, Takahiro Shigemitsu, Yu Kawabata
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Patent number: 9209034Abstract: In a plasma etching method for etching a metal layer of a substrate to be processed through a hard mask by using a plasma etching apparatus, a first step in which a first etching gas comprising a mixed gas of O2, CF4 and HBr is used as an etching gas, and a second step in which a second etching gas comprising a mixed gas of O2 and CF4 is used as an etching gas, are continuously and alternately repeated a plurality of times. At this time, a first high-frequency power of a first frequency and a second high-frequency power of a second frequency, which is lower than the first frequency, are applied to a lower electrode, and the first high-frequency power is applied in a pulse form.Type: GrantFiled: January 31, 2013Date of Patent: December 8, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Akinori Kitamura, Kenta Yasuda, Shunsuke Ishida
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Patent number: 9181399Abstract: The present invention is a method for producing a polysiloxane represented by formula (1), which includes a condensation step wherein a hydrolysis/polycondenzation of a starting material monomer that forms a constituent unit is carried out in a reaction solvent that contains at least one alcohol that is selected from among secondary alcohols having 4-6 carbon atoms and tertiary alcohols having 4-6 carbon atoms. The method for producing a polysiloxane of the present invention suppresses problems such as gelation that occurs during the production, and increase in the molecular weight or gelation that occurs during storage after the production or the like.Type: GrantFiled: December 26, 2012Date of Patent: November 10, 2015Assignee: TOAGOSEI CO., LTD.Inventors: Kinuko Ogura, Akinori Kitamura
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Patent number: 9136486Abstract: The purpose of the invention is to provide: a composition for an organic semiconductor insulating film, which is capable of forming an insulating film that exhibits excellent hydrophobicity and smoothness of the surface, while having excellent electrical stability; and an organic semiconductor insulating film obtained by using the composition for an organic semiconductor insulating film. The present composition contains a polysiloxane and an organic polymer compound. The polysiloxane is a polyhedral silsesquioxane having an oxetanyl group and/or an oxetanyl group containing silicon compound represented by the following formula (1). In the formula (1), each of R1-R3 independently represents a monovalent organic group (provided that at least one of R1-R3 is a monovalent organic group having an oxetanyl group); and each of v, w, x and y independently represents 0 or a positive number (provided that w and at least one of v, x and y are positive numbers).Type: GrantFiled: November 13, 2012Date of Patent: September 15, 2015Assignee: TOAGOSEI CO., LTD.Inventors: Hiroshi Suzuki, Akinori Kitamura, Takashi Hamada
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Patent number: 9087798Abstract: An etching method can improve etching accuracy as well as secure selectivity when forming a dummy gate of a fin-type field effect transistor. In the etching method, the dummy gate of a fin-type field effect transistor is formed with a target object. In the etching method, a gate material deposited between multiple fins is etched by using surface wave plasma. A pressure in the etching method is 50 mTorr (6.67 Pa) or more, a frequency of a power to be applied to a mounting table configured to mount thereon the target object is in a range of 10 Hz or more to 200 Hz or less, and the power is pulse-modulated such that a duty ratio as a ratio of an ON-time to a pulse cycle is 50% or less.Type: GrantFiled: August 11, 2014Date of Patent: July 21, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroto Ohtake, Akinori Kitamura, Hironori Matsuoka, Yoko Noto
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Publication number: 20150162203Abstract: Disclosed is a method of etching a silicon layer by removing an oxide film formed on a workpiece which includes the silicon layer and a mask provided on the silicon layer. The method includes: (a) forming a denatured region by generating plasma of a first processing gas containing hydrogen, nitrogen, and fluorine within a processing container accommodating the workpiece therein to denature an oxide film formed on a surface of the workpiece; (b1) removing the denatured region by generating plasma of a rare gas within the processing container; and (c) etching the silicon layer by generating plasma of a second processing gas within the processing container.Type: ApplicationFiled: December 2, 2014Publication date: June 11, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Akinori KITAMURA, Eiji SUZUKI
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Publication number: 20150099366Abstract: Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage (3) to 100° C. or greater.Type: ApplicationFiled: May 29, 2013Publication date: April 9, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Ryohei Takeda, Mitsuhiro Tomura, Akinori Kitamura, Shinji Higashitsutsumi, Hiroto Ohtake, Takashi Tsukamoto
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Publication number: 20150064922Abstract: Provided is a method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed of silicon. The method performs a plurality of sequences. Each sequence includes: forming a denatured region by generating plasma of a processing gas that contains hydrogen, nitrogen, and fluorine within a processing container that accommodates the workpiece so as to denature a portion of the first region, and removing the denatured region within the processing container. In addition, a sequence subsequent to a predetermined number of sequences after a first sequence among the plurality of sequences further includes exposing the workpiece to plasma of a reducing gas which is generated within the processing container, prior to the forming of the denatured region.Type: ApplicationFiled: August 27, 2014Publication date: March 5, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Akinori KITAMURA, Hiroto OHTAKE, Eiji SUZUKI