Abstract: The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.

Abstract: To provide a method for producing a Group III element nitride crystal by growing it on a plane on the ?c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12.

Abstract: The present invention relates to a single-crystalline aluminum nitride wherein a carbon concentration is 1×1014 atoms/cm3 or more and less than 3×1017 atoms/cm3, a chlorine concentration is 1×1014 to 1×1017 atoms/cm3, and an absorption coefficient at 265 nm wavelength is 40 cm?1 or less.

Abstract: A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a ?-Ga2O3-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a ?-Ga2O3-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.

Abstract: A ZnO film production method includes: disposing a substrate on an installation base; and, while supplying chlorine gas from a chlorine gas supply source to a first raw material storing part R1 and supplying oxygen gas from a third gas supply source (oxygen gas supply source) G3 into a reaction container, controlling heating units (heaters H1, H2 and H3) with a control device CONT such that temperature T1 of the first raw material storing part R1, temperature T2 of a second raw material storing part R2 and temperature T3 of the installation base on which the substrate is disposed satisfy a relationship of T1<T2<T3. Thus, according to the production method of the present disclosure, it is possible to produce a high-quality ZnO film.

Abstract: As one embodiment, the present invention provides a method for growing a ?-Ga2O3-based single crystal film by using HVPE method. The method includes a step of exposing a Ga2O3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a ?-Ga2O3-based single crystal film on a principal surface of the Ga2O3-based substrate at a growth temperature of not lower than 900° C.

Abstract: A nitride semiconductor crystal has a diameter of four inches or more and is warped to have a curvature radius of 100 m or more, and has an impurity concentration of 1×1017/cm3 or lower. A manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding a gallium trihalide gas having a partial pressure of 9.0×10?3 atm or higher onto the substrate, and growing a GaN crystal in the ?C-axis direction on the substrate, where a growth temperature for the GaN crystal is 1200° C. or higher, or a manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding an aluminum trihalide gas having a partial pressure of 9.0×10?3 atm or higher onto the substrate, and growing an AlN crystal in the ?C-axis direction on the substrate, where a growth temperature for the AlN crystal is 1400° C. or higher.

Abstract: According to the invention, there is provided a method for producing a gallium trichloride gas, the method including: a first step of reacting a metallic gallium and a chlorine gas to produce a gallium monochloride gas; and a second step of reacting the produced gallium monochloride gas and a chlorine gas to produce a gallium trichloride gas.

Abstract: The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline A1N layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.

Abstract: A ZnO film production method includes: disposing a substrate on an installation base; and, while supplying chlorine gas from a chlorine gas supply source to a first raw material storing part R1 and supplying oxygen gas from a third gas supply source (oxygen gas supply source) G3 into a reaction container, controlling heating units (heaters H1, H2 and H3) with a control device CONT such that temperature T1 of the first raw material storing part R1, temperature T2 of a second raw material storing part R2 and temperature T3 of the installation base on which the substrate is disposed satisfy a relationship of T1<T2<T3. Thus, according to the production method of the present disclosure, it is possible to produce a high-quality ZnO film.

Abstract: There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE. To produce a group III nitride crystal by HVPE comprising the step of growing a group III nitride crystal layer by vapor-phase growth on a single crystal substrate by contacting the heated single crystal substrate with a raw material gas containing a group III halide and a compound having a nitrogen atom, the group III nitride crystal is grown by vapor-phase growth on the single crystal substrate heated at a temperature of 1,000° C. or more and less than 1,200° C. to form an intermediate layer and then, a group III nitride crystal is further grown by vapor-phase growth on the intermediate layer on the substrate heated at a temperature of 1,200° C. or higher.

Abstract: The present invention relates to a single-crystalline aluminum nitride wherein a carbon concentration is 1×1014 atoms/cm3 or more and less than 3×1017 atoms/cm3, a chlorine concentration is 1×1014 to 1×1017 atoms/cm3, and an absorption coefficient at 265 nm wavelength is 40 cm?1 or less.

Abstract: It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate.

Abstract: InGaN-based light-emitting devices fabricated on an InGaN template layer are disclosed.

Abstract: This invention provides a self supporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN semiconductor device. The n-type conductive aluminum nitride semiconductor crystal, by which the self supporting substrate is made up, contains Si atom at a concentration of 1×1018 to 5×1020 cm?3 is substantially free of halogen atoms and substantially does not absorb the light having the energy of not more than 5.9 eV. The self supporting substrate can be obtained by a method comprising the steps of forming an AlN crystal layer on a single crystal substrate such as a sapphire by the HVPE method, preheating the obtained substrate having the AlN crystal layer to a temperature of 1,200° C. or more, forming a second layer consisting of the n-type conductive aluminum nitride semiconductor crystal is formed on the AlN crystal layer in high rate by the HVPE method and separating the second layer from the obtained laminate.

Abstract: The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800° C. in an inert gas atmosphere and which does produce volatiles by decomposition when contacting with a reducing gas in a temperature range of 800-1600° C., for example sapphire; forming voids along the interface between the base substrate and the Al-based group-III nitride thin-layer of the obtained laminated substrate by thermally treating the laminated substrate in a temperature range of 800-1600° C. in a reducing gas atmosphere containing ammonia gas; forming a group-III nitride single crystal thick-layer on the Al-based group-III nitride thin-layer; and separating these formed layers.

Abstract: There is disclosed a method for forming a gallium nitride layer of which resistivity is 1×106 ?·cm or more, including steps of: forming a gallium nitride layer containing iron on a substrate; and heating said gallium nitride layer formed on said substrate.

Abstract: The present invention is a method for producing a laminated body, comprising the steps of: (1) preparing a base substrate having a surface formed of a single crystal which is different from the material constituting the Al-based group-III nitride single crystal layer to be formed; (2) forming an Al-based group-III nitride single crystal layer having a thickness of 10 nm to 1.5 ?m on the single crystal surface of the prepared base substrate; (3) forming on the Al-based group-III nitride single crystal layer a non-single crystal layer being 100 times or more thicker than the Al-based group-III nitride single crystal layer without breaking the previously-obtained Al-based group-III nitride single crystal layer; and (4) removing the base substrate.

Abstract: This invention provides a selfsupporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN semiconductor device. The n-type conductive aluminum nitride semiconductor crystal, by which the selfsupporting substrate is made up, contains Si atom at a concentration of 1×1018 to 5×1020 cm?3, is substantially free from halogen atoms, and substantially does not absorb the light having the energy of not more than 5.9 eV. The selfsupporting substrate can be obtained by a method comprising the steps of forming an AlN crystal layer on a single crystal substrate such as a sapphire by the HVPE method, preheating the obtained substrate having the AlN crystal layer to a temperature of 1,200° C. or more, forming a second layer consisting of the n-type conductive aluminum nitride semiconductor crystal is formed on the AlN crystal layer in high rate by the HVPE method and separating the second layer from the obtained laminate.

Abstract: A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate (1), such as a (0001)-cut sapphire substrate, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus (11). Next, gaseous iron compound GFe from a source (13) for an iron compound, such as ferrocene, and hydrogen chloride gas G1HCl from a hydrogen chloride source (15) are caused to react with each other in a mixing container (16) to generate gas GFeComp of an iron-containing reaction product, such as iron chloride (FeCl2). In association with the generation, the iron-containing reaction product GFeComp, first substance gas GN containing elemental nitrogen from a nitrogen source (17), and second substance gas GGa containing elemental gallium are supplied to a reaction tube (21) to form iron-doped gallium nitride (23) on the substrate (1).