Abstract: A gear pump having an inner rotor and an outer rotor is covered by a cylindrical outer casing and side casings. The cylindrical outer casing has two outer circumferential edges which are welded over the entire circumference thereof to the outer edges of the side casings, respectively. The outer casing has two angularly spaced recesses in its inner periphery for receiving slide seals therein. Welding is started at a welding start point which is 90 degrees spaced from the middle point between two recesses. During welding, welding energies are applied to the welding start point and the middle point between two recesses. Those energies tend to deform the casing into oval shapes that are 90 degrees out of phase from each other. Thus, these energies cancel each other, thereby preventing the casing from being deformed.

Abstract: The washing device comprises a case body; a table installed into the case body and supports a work which is cleaned; an incidence device having an impeller, capable of projecting an incidence object and a cleaning liquid to the work; an incidence object supply which supplies the incidence object to the incidence device by driving the impeller; and a cleaning liquid supply which supplies the cleaning liquid to the impeller when the incidence device drives so that it can remove paint, a mold release agent, dirt, oil dirt, etc. for a short time and can be used again and again, and it can use cleaning agent such as surface-active agent, antirust, a degreasing agent, warm water, water, etc. and can prevent to pollute to environment, human body, and underground.

Abstract: A semiconductor ceramic having a negative temperature coefficient of resistance, the element comprising about 0.1 to 20 mol % of AMnO3 (A represents at least one of Ca, Sr, Ba, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy and Ho) and to a spinel composite oxide made of a solid solution of Mn and at least one element in Ti, V, Cr, Fe, Co, Ni, Cu, Zn, Mg and Al. As a perovskite Mn composite oxide, one or more of CaMnO3, SrMnO3, BaMnO3, LaMnO3, PrMnO3, NdMnO3, SmMnO3, EuMnO3, GdMnO3, TbMnO3, DyMnO3 and HoMnO3 may be used.

Abstract: A cylindrical member is placed in a dead-end hole formed in a housing made of a material such as aluminum. A peripheral portion of the hole is pressed down to plastically deform the housing material and to supply the deformed material into a groove formed on an outer periphery of the cylindrical member. The cylindrical member is calked to the housing in this manner. To supply a proper amount of deformed material into the groove for obtaining a quality calking, an inflection point of a calking curve indicating a relation of a calking force and a calking stroke is detected during the calking process. After the inflection point is detected, the calking is performed by giving a predetermined calking stroke or by adding a predetermined calking force.

Abstract: A semiconductor ceramic having a negative temperature coefficient of resistance, the element comprising about 0.1 to 20 mol % of AMnO3 (A represents at least one of Ca, Sr, Ba, La, Pr, Nd, Sm, Eu, Gd, Th, Dy and Ho) and to a spinel composite oxide made of a solid solution of Mn and at least one element in Ti, V, Cr, Fe, Co, Ni, Cu, Zn, Mg and Al. As a perovskite Mn composite oxide, one or more of CaMnO3, SrMnO3, BaMnO3, LaMnO3, PrMnO3, NdMnO3, SmMnO3, EuMnO3, GdMnO3, TbMnO3, DyMnO3 and HoMnO3 may be used.

Abstract: A cylindrical member is placed in a dead-end hole formed in a housing made of a material such as aluminum. A peripheral portion of the hole is pressed down to plastically deform the housing material and to supply the deformed material into a groove formed on an outer periphery of the cylindrical member. The cylindrical member is calked to the housing in this manner. To supply a proper amount of deformed material into the groove for obtaining a quality calking, an inflection point of a calking curve indicating a relation of a calking force and a calking stroke is detected during the calking process. After the inflection point is detected, the calking is performed by giving a predetermined calking stroke or by adding a predetermined calking force.

Abstract: A semiconductive ceramic having a negative temperature coefficient of resistance, includes an oxide of a rare earth transition element excluding Ce and including Y, with the addition of at least one of the following elements: Si, Zr, Hf, Ta, Sn, Sb, W, Mo, Te or Ce.

Abstract: A semiconductor ceramic device includes a semiconductor ceramic sintered body and external electrodes. The semiconductor ceramic sintered body contains a lanthanum cobalt type oxide major component, about 0.1 to 10 mol % on an element conversion basis of an oxide of Cr as a sub-component, and about 0.001 to 0.5 mol % on an element conversion basis of at least one of the oxides of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Ni, Cu and Zn.

Abstract: The present invention provides a barium titanate-based semiconducting ceramic which exhibits excellent PTC characteristic and which can be fired at a temperature lower than 1000.degree. C. The present invention also provides an electronic element fabricated from the ceramic. The semiconducting ceramic contains, in a semiconducting sintered barium titanate; boron oxide; an oxide of at least one of barium, strontium, calcium, lead, yttrium and a rare earth element; and an optional oxide of at least one of titanium, tin, zirconium, niobium, tungsten and antimony in which the atomic boron is0.005.ltoreq.B/.beta..ltoreq.0.50 and1.0.ltoreq.B/(.alpha.-.beta.).ltoreq.4.0wherein .alpha. represents the total number of atoms of barium, strontium, calcium, lead, yttrium and rare earth element contained in the semiconducting ceramic, and .beta. represents the total number of atoms of titanium, tin, zirconium, niobium, tungsten and antimony contained in the semiconducting ceramic.

Abstract: The present invention provides a varistor which has low variation in electric characteristics and enhanced withstand electrostatic voltage and which can be fired at low temperature; as well as a method for producing the same. The laminated varistor comprises a sintered laminate formed by laminating alternating layers of semiconducting ceramic which comprises ZnO as a primary component and at least Bi oxide as a secondary component, and internal electrodes which predominantly comprise Pt and Pd as an inevitable impurity; and external electrodes maintaining electrical contact with the internal electrodes, wherein the Pd content is controlled to be about 0.1 wt. % or less based on the content of Pt, which is a primary component of the internal electrodes.

Abstract: A semiconducting ceramic contains a lanthanum cobalt oxide as a major component represented by La.sub.x CoO.sub.3 wherein 0.600.ltoreq.x.ltoreq.0.999. The average crystal grain size of cobalt oxide present in the major component is not more than about 20 .mu.m. A change in resistivity between the semiconducting ceramic products can be suppressed.

Abstract: A semiconductive ceramic composition having negative resistance-temperature characteristics, wherein the composition comprises lanthanum cobalt oxide as the primary component, and, as secondary components, at least one oxide of an element selected from B, Fe and Al and at least one oxide of an element selected from Si, Zr, Hf, Ta, Sn, Sb, W, Mo, Te, Ce, Nb, Mn, Th and P. A semiconductive ceramic composition having a resistivity of approximately 10 .OMEGA..multidot.cm to 100 .OMEGA..multidot.cm at room temperature is obtained by controlling the amount of additives. Since the resistivity at room temperature can be enhanced to several times or more that of the conventional compositions while characteristics of the conventional compositions are maintained, the composition may be widely applied to control heavy current.

Abstract: A semiconductive ceramic in which the B constant is maintained at about 4000 K or more at elevated temperature to thereby decrease power consumption, and the B constant is lowered less than 4000 K at low temperature so as to avoid unnecessary increase of resistance; as well as a semiconductive ceramic element using the same. The semiconductive ceramic is formed of a lanthanum cobalt oxide, which serves as the primary component, and, as a secondary component, at least one oxide of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Ni, Cu and Zn. The semiconductive ceramic element is fabricated through use of the semiconductive ceramic and an electrode formed thereon.

Abstract: A semiconducting ceramic having negative resistance-temperature characteristics and a critical temperature consisting essentially of a rare-earth transition element oxide which is an oxide of a combination of samarium and nickel, wherein the samarium is partially replaced with Ln which is at least one other element selected from the group consisting of bismuth and rare-earth elements excluding lanthanum and cerium.

Abstract: Activated carbon is prepared specially by activating carbonaceous material in a circumstance comprising water vapor less than 15% on volume basis and providing thus treated activated carbon carries alkaline or alkaline earth metal sulfide in it. Thus prepared activated carbon or that carrying these compound provides for method of eliminating mercury and its compounds from liquid hydrocarbons substantially completely contained at a slight amount in it. Liquid hydrocarbons containing mercury or sulfur will harm catalysts which are often applied during process for such intermediates of petroleum products and petrochemical products. Thus the present method is advantageous to processing of such oil intermediates.

Abstract: Provided is a semiconductive ceramic composition comprising a lanthanum cobalt oxide and having a negative resistance-temperature characteristic, which contains, as the side component, a chromium oxide in an amount of from about 0.005 to 30 mol % in terms of chromium, and also a semiconductive ceramic device comprising the composition. The device is usable for rush current inhibition, for motor start-up retardation and for halogen lamp protection, and is also usable in temperature-compensated crystal oscillators.

Abstract: A resistor 1 in which at least one resistance film 4 is embedded in a ceramic sintered body 3, glass is diffused into the sintered body 3 to form a glass diffusion layer 6, and both end faces 4a and 4b of the resistance film 4 are respectively exposed to both end faces 3a and 3b of the ceramic sintered body 3.

Abstract: A chip type varistor in which first and second inner electrodes are embedded in a sintered body obtained by laminating a plurality of semiconductor ceramics layers so as not to be overlapped with each other in the direction of thickness of the ceramics layers, respective one edges of the first and second inner electrodes are led out to one and the other of a pair of side surfaces opposed to each other of the sintered body and are electrically connected to outer electrodes formed on the pair of side surfaces of the sintered body, respectively, a non-connected type inner electrode which is not electrically connected to the above described outer electrodes is embedded in the sintered body, and the non-connected type inner electrode is arranged so as to be overlapped with the first and second inner electrodes while being separated by the semiconductor ceramics layer.

Abstract: A soft synthetic resin, such as polyurethane, body is molded onto a metallic steering wheel frame except for a part thereof intended for installation of the steering wheel onto a column shaft and a soft burr formed on the resultant covered steering wheel along the parting line of the mold is removed by refrigerating the steering wheel to make the burr hard and fragile and then removing the burr by shot blast treatment, whereafter the steering wheel is heat dried to eliminate water from the atmosphere condensing on the exposed metallic installation part of the steering wheel and prevent resulting corrosion of that part.

Abstract: A monolithic type varistor in which a plurality of inner electrodes are arranged in a sintered body composed of semiconductor ceramics so as to be overlapped with each other while being separated by semiconductor ceramic layers. The plurality of inner electrodes are electrically connected to first and second outer electrodes formed on both end surfaces of the sintered body. One or more non-connected type inner electrodes are arranged between adjacent ones of the plurality of inner electrodes and are not electrically connected to the outer electrodes, each of the non-connected type inner electrodes being spaced apart from each adjacent inner electrode or non-connected type inner electrode while being separated therefrom by a semiconductor ceramic layer. Voltage non-linearity is obtained by Schottky barriers formed at the interface of the inner electrode and the semiconductor ceramic layer and the interface of the non-connected type inner electrode and the semiconductor ceramic layer.