Abstract: A substrate processing device according to the present invention is a substrate processing device that performs substrate processing with a processing solution and includes inspection means for inspecting degradation of components constituting the substrate processing device. The inspection means includes: capturing means for acquiring image data of the components; color information acquisition means for acquiring color information of an inspection target component from the image data acquired by the capturing means; and degradation determination means for determining a degradation degree of the inspection target component based on the acquired color information.

Abstract: According to the present invention, after supplying a rinse liquid containing water to a substrate that is held horizontally, an IPA-containing liquid which contains isopropyl alcohol is supplied to the substrate to which the rinse liquid adhering. Subsequently, an IPA-containing liquid low in moisture concentration is supplied to the substrate. The IPA-containing liquid which has been supplied to the substrate is recovered and supplied to the substrate again.

Abstract: It is an object to prevent adhesion of a processing liquid to a non-processing region of a substrate. In order to achieve the object, a substrate processing apparatus includes a substrate rotating mechanism, a discharging portion for discharging a processing liquid to a substrate, a moving portion for moving a discharging portion, and a controller. The discharging portion starts to discharge the processing liquid at a first position and is moved to a second position. The first position is a position of the discharging portion where a section of a passage of the discharging portion is projected onto a first region, and the second position is a position of the discharging portion where the section of the passage is projected onto a second region. The first region is a region on the peripheral edge side of the substrate from the second region.

Abstract: A substrate treatment apparatus includes a brush moving mechanism which moves a shaft to which a cleaning brush is attached. The brush body includes a substrate contact portion of a pillar-shaped portion. The substrate treatment apparatus further includes a correcting member and a relatively-positioning mechanism. When the correcting member is placed in a target position, a contact portion of the correcting member overlaps an object portion which is a combination of a design contact portion and a belt-shaped annular portion in an outer surface of a design pillar-shaped portion of a design body of a design brush. The contact portion is formed to have an inverted shape of the object portion of the design brush, and a portion of the contact portion, which corresponds to the belt-shaped annular portion, is a center-axis facing surface which faces a center axis of the shaft.

Abstract: A substrate processing apparatus includes a rotating unit rotating a substrate around a predetermined first rotational axis passing through a central portion of a major surface of the substrate, a nozzle provided to be circumrotatable around a predetermined second rotational axis, discharging a processing fluid toward the major surface of the substrate, and having a plurality of discharge ports disposed at positions separated from the second rotational axis, a processing fluid supplying unit supplying the processing fluid to the plurality of discharge ports, and a nozzle moving unit moving the nozzle between a central portion processing position and a peripheral edge portion.

Abstract: In a substrate processing method, a substrate holding unit holds a substrate in a horizontal position, a processing liquid supplying unit supplies first and second processing liquids to the surface of the substrate held by the substrate holding unit, a substrate rotating unit rotates the substrate held by the substrate holding unit, a heater opposes the substrate held by the substrate holding unit, and a moving unit moves at least one of the substrate holding unit and the heater supporting member such that the heater and the substrate are held in two different relative positions.

Abstract: It is an object to prevent adhesion of a processing liquid to a non-processing region of a substrate. In order to achieve the object, a substrate processing apparatus includes a substrate rotating mechanism, a discharging portion for discharging a processing liquid to a substrate, a moving portion for moving a discharging portion, and a controller. The discharging portion starts to discharge the processing liquid at a first position and is moved to a second position. The first position is a position of the discharging portion where a section of a passage of the discharging portion is projected onto a first region, and the second position is a position of the discharging portion where the section of the passage is projected onto a second region. The first region is a region on the peripheral edge side of the substrate from the second region.

Abstract: A substrate treatment apparatus is provided, which includes: a seal chamber including a chamber body having an opening, a lid member provided rotatably with respect to the chamber body and configured to close the opening, and a first liquid seal structure which liquid-seals between the lid member and the chamber body, the seal chamber having an internal space sealed from outside; a lid member rotating unit which rotates the lid member; a substrate holding/rotating unit which holds and rotates a substrate in the internal space of the seal chamber; and a treatment liquid supplying unit which supplies a treatment liquid to the substrate rotated by the substrate holding/rotating unit.

Abstract: A data processor is configured to perform first processing to acquire data that is included in reception signals received by an antenna and is transmitted in accordance with a first wireless communication scheme and second processing to acquire data that is included in the reception signals and is transmitted in accordance with a second wireless communication scheme. The data processor has, as an operating mode, a first operating mode and a second operating mode. The first operating mode is a mode in which, when the first processing is performed, the second processing is intermittently performed in place of the first processing. The second operating mode is a mode in which, when the first processing is performed, the second processing is intermittently performed in place of the first processing at intervals longer than intervals in the first operating mode.

Abstract: The inventive substrate treatment apparatus includes a spin chuck which horizontally holds and rotates a wafer; a heater which is disposed in opposed relation to a lower surface of the wafer held by the spin chuck and heats the wafer from a lower side; a phosphoric acid nozzle which spouts a phosphoric acid aqueous solution to a front surface (upper surface) of the wafer held by the spin chuck; and a suspension liquid nozzle which spouts a silicon suspension liquid to the front surface of the wafer held by the spin chuck. The wafer is maintained at a higher temperature on the order of 300° C. and, in this state, a liquid mixture of the phosphoric acid aqueous solution and the silicon suspension liquid is supplied to the front surface of the wafer.

Abstract: In a substrate processing apparatus (1), a silicon oxide film on a main surface of a substrate (9) is removed in an oxide film removing part (4) and then a silylation material is applied to the main surface, to thereby perform a silylation process in a silylation part (6). It is thereby possible to lengthen the Q time from the removal of the silicon oxide film to the formation of the silicon germanium film and reduce the temperature for prebaking in the formation of the silicon germanium film.

Abstract: A substrate processing apparatus includes a substrate holding unit that holds a substrate in a horizontal position, a processing liquid supplying unit that supplies the processing liquid to the surface of the substrate held by the substrate holding unit, a substrate rotating unit that rotates the substrate held by the substrate holding unit, a heater that opposes the substrate held by the substrate holding unit, a heater supporting member that supports the heater independently of the substrate holding unit and a moving unit that moves at least one of the substrate holding unit and the heater supporting member such that the heater and the substrate held by substrate holding unit approach/leave each other.

Abstract: An inventive substrate treatment method includes a silylation step of supplying a silylation agent to a substrate, and an etching step of supplying an etching agent to the substrate after the silylation step. The method may further include a repeating step of repeating a sequence cycle including the silylation step and the etching step a plurality of times. The cycle may further include a rinsing step of supplying a rinse liquid to the substrate after the etching step. The cycle may further include a UV irradiation step of irradiating the substrate with ultraviolet radiation after the etching step. The method may further include a pre-silylation or post-silylation UV irradiation step of irradiating the substrate with the ultraviolet radiation before or after the silylation step.

Abstract: A substrate processing method includes a water removing step of removing water from a substrate, a silylating step of supplying a silylating agent to the substrate after the water removing step, and an etching step of supplying an etching agent to the substrate after the silylating step. The substrate may have a surface on which a nitride film and an oxide film are exposed and in this case, the etching step may be a selective etching step of selectively etching the nitride film by the etching agent. The etching agent may be supplied in a form of a vapor having an etching component.

Abstract: A solvent vapor containing a solvent material capable of dissolving hydrogen fluoride is supplied to a surface of a substrate, thereby covering the surface of the substrate with a liquid film containing solvent material. Thereafter an etching vapor containing a hydrogen fluoride is supplied to the surface of the substrate covered by the liquid film containing the solvent material, thereby etching the surface of the substrate.

Abstract: A preprocess step for supplying an inert gas into an enclosed space in which a substrate is disposed, while exhausting gas by sucking out of the enclosed space. And then, an etching step for supplying a process vapor into the enclosed space while exhausting gas out of the enclosed space at an rate lower than a rate in the preprocess step. And then a post-process step for supplying an inert gas into the enclosed space while exhausting gas by sucking out of the enclosed space at a rate higher than the rate in the etching step.

Abstract: A substrate treatment apparatus is provided, which includes: a seal chamber including a chamber body having an opening, a lid member provided rotatably with respect to the chamber body and configured to close the opening, and a first liquid seal structure which liquid-seals between the lid member and the chamber body, the seal chamber having an internal space sealed from outside; a lid member rotating unit which rotates the lid member; a substrate holding/rotating unit which holds and rotates a substrate in the internal space of the seal chamber; and a treatment liquid supplying unit which supplies a treatment liquid to the substrate rotated by the substrate holding/rotating unit.

Abstract: According to the substrate processing method of the invention, a jet of droplets generated from a gas and a heated processing liquid is supplied to the surface of a substrate. A resist stripping liquid to strip off the resist from the surface of the substrate is then supplied to the surface of the substrate.

Abstract: A substrate processing method according to the present invention is to be applied for stripping and removing, from the surface of a substrate, a resist no longer required. According to the substrate processing method, a resist stripping liquid is supplied to the center portion of the surface of a substrate held by a substrate holding unit. An organic solvent liquid is supplied to the peripheral edge portion of the surface of the substrate held by the substrate holding unit.

Abstract: A substrate treatment method is disclosed, which can effectively reduce the amount of charges accumulated on a substrate due to treatment of the substrate with a water-containing liquid. The method comprises the steps of: supplying a water-containing liquid to a substrate held generally horizontally by a substrate holding/rotating mechanism while rotating the substrate at a first rotation speed; and removing charges from the substrate after the water supplying step by performing a puddle process for a predetermined period by retaining a liquid film of a predetermined liquid on a surface of the substrate held generally horizontally by the substrate holding/rotating mechanism with the substrate being rotated at a second rotation speed lower than the first rotation speed or kept in a non-rotating state without further supplying the predetermined liquid to the liquid film.