Abstract: A content usage management system 1 comprises a user terminal 200a using a content as a digital production and a server 100 managing usage of the content in the user terminal 200a over a communication network 300; wherein the sever 100 includes a user right information DB 120 that memorizes right information regarding a usage right of the content entitled to a user who uses the terminal 200a and a content information generation unit 170 that generates LT which is right information indicating a part of usage right entitled to the user based upon a request from the user and that sends the LT to the sever terminal 200a; and the user terminal 200a includes a communication unit that receives the LT sent from the server 100 and a license information processing unit 260 that controls usage of the content according to the usage right indicated on the received LT.

Abstract: A reception apparatus includes: a reception unit for receiving the scrambled content, the scrambled content being scrambled so that a predetermined unit of scrambled content is descrambled using a descrambling key corresponding to the predetermined unit of scrambled content, and at least one piece of storage information in which a list including all descrambling keys used for descrambling the scrambled content is embedded; storage unit for storing the received scrambled content and the storage information; list extraction unit for extracting the list from the stored storage information; descramble processing unit for extracting the predetermined unit of scrambled content from the stored scrambled content, extracting a descrambling key corresponding to the predetermined unit of scrambled content from the extracted list, and descrambling the extracted predetermined unit of scrambled content using the extracted descrambling key; and reproduction unit for reproducing the predetermined unit of descrambled content

Abstract: A solid-state imaging device comprising an MOS scanning circuit over which is formed an array of photoconductive imaging elements. The imaging elements are separated by doped regions which create potential barriers against the movement of carriers of the photoconductive regions.

Abstract: A solid-state imaging device in which the possibility of defect formation in a photoconductive layer is substantially eliminated by the use of a multi-layered structure. A photoconductive film unit and a transparent electrode are formed in that order on a semiconductor substrate in which is formed a scanning circuit composed of a plurality of picture elements defined by respective electrodes on the semiconductor substrate and the transparent electrode. The photoconductive film unit is composed of a polycrystalline silicon film and an amorphous silicon film that are disposed in that order on the semiconductor substrate.

Abstract: A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer is formed over the semiconductor substrate for providing the plural electrodes, and a photoconductive film is formed over the electrode layer. A first transparent electrode is produced over the photoconductive film, after which a resist pattern is formed on the first transparent electrode layer corresponding to the pixels. The first transparent layer and the photoconductive film are etched according to the resist pattern to spatially isolate adjacent pixels in the first transparent layer and the photoconductive film. Adjacent pixels are isolated by etching, using the resist pattern, that part of the electrode layer on which are disposed the first transparent electrode layer and the photoconductive film between isolated pixels.

Abstract: A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer is formed over the semiconductor substrate for providing the plural electrodes, and a photoconductive film is formed over the electrode layer. A first transparent electrode is produced over the photoconductive film, after which a resist pattern is formed on the first transparent electrode layer corresponding to the pixels. The first transparent layer and the photoconductive film are etched according to the resist pattern to spatially isolate adjacent pixels in the first transparent layer and the photoconductive film. Adjacent pixels are isolated by etching, using the resist pattern, that part of the electrode layer on which are disposed the first transparent electrode layer and the photoconductive film between isolated pixels.

Abstract: A process for producing an amorphous semiconductor membrane. A predetermined gas is introduced into a vacuum chamber which is decomposed by a discharge phenomenon. The discharge phenomenon is caused by an electric field made up of a high frequency electric field or pulsed electric field superposed on a DC electric field.

Abstract: An electrophotographic light-sensitive element and process for the production thereof are described, wherein the element comprises an electrically conductive support coated with a photoconductive layer composed of a silicon- and carbon-based amorphous material doped with hydrogen and fluorine.

Abstract: A noncrystalline silicon powder having excellent photoconductivity is described, comprising silicon and hydrogen, exhibiting an infrared absorption spectrum characterized by absorption peaks centered at about 2000 cm.sup.-1 and 630 cm.sup.-1, wherein the height of the absorbance peak at 2000 cm.sup.-1 is at least one-tenth the height of the peak centered at 630 cm.sup.-1, and exhibiting a spin density of not more than 10.sup.18 cm.sup.-3 determined by electron spin resonance spectroscopy; the noncrystalline silicon powder is used as highly efficient photoconductor in photoconductive compositions utilized for the production of electrophotographic photoreceptors.

Abstract: A function separated type electrophotographic light-sensitive member and a process for production thereof are described, said member comprising an electrically conductive support, a light-sensitive layer made of a hydrogen-doped amorphous silicon semiconductor, and an organic electric charge transport layer containing at least one positive charge transport carrier selected from the group consisting of pyrazolines, aryl-alkanes, arylketones, arylamines and chalcones.

Abstract: In the course of producing a thin film of amorphous silicon by high frequency sputtering elemental silicon under an atmosphere containing at least hydrogen gas, the temperature of the base plate onto which the amorphous silicon is deposited is maintained at a temperature of about 50.degree. C. to 150.degree. C. The thus obtained silicon film possesses not only photoconductivity sufficient for use as a photoconductor but also a large difference between photoconductivity and dard conductivity. In addition, a photoconductor of an amorphous silicon thin film can be produced at low cost without environmental pollution problems.

Abstract: An image is recorded on the recording layer of an image recording material by exposing the photoconductor thereof to imagewise light and applying a voltage there-across. The image recording material is composed of(a) a recording medium consisting of a support base at least one surface of which is electrically conductive and a recording layer provided on the electrically conductive surface of the support base containing an oxidizable or reducible compound, and(b) a photoconductor disposed in contact with the surface of the recording layer.The photoconductor has a specific resistance of not more than 10.sup.9 .OMEGA.cm and causes the effect of electric rectification at the boundary between itself and the recording layer.