Patents by Inventor Akio Ishiguro
Akio Ishiguro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230313411Abstract: A vapor phase growth apparatus according to an embodiment includes: a reactor; a holder provided in the reactor, a substrate being placed on the holder; a first source gas flow path configured to supply a first source gas containing silicon and chlorine into the reactor; and a purge gas flow path configured to supply a purge gas containing silicon and chlorine into the reactor, the atomic concentration of silicon in the purge gas being lower than that in the first source gas.Type: ApplicationFiled: June 9, 2023Publication date: October 5, 2023Inventors: Yoshiaki DAIGO, Akio ISHIGURO, Keisuke KURASHIMA, Shigeaki ISHII
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Patent number: 11749525Abstract: A vapor phase growth apparatus according to an embodiment includes a reaction chamber; a substrate holder having a holding wall capable holding an outer periphery of the substrate; a process gas supply part provided above the reaction chamber, the process gas supply part having a first region supplying a first process gas and a second region around the first region supplying a second process gas having a carbon/silicon atomic ratio higher than that of the first process gas, an inner peripheral diameter of the second region being 75% or more and 130% or less of a diameter of the holding wall; a sidewall provided between the process gas supply part and the substrate holder, an inner peripheral diameter of the sidewall being 110% or more and 200% or less of an outer peripheral diameter of the second region; a first heater; a second heater; and a rotation driver.Type: GrantFiled: March 9, 2022Date of Patent: September 5, 2023Assignee: NuFlare Technology, Inc.Inventors: Yoshiaki Daigo, Akio Ishiguro, Hideki Ito
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Publication number: 20230044440Abstract: A film forming apparatus includes a film formation chamber capable of accommodating a substrate; a gas supplier including nozzles provided in an upper portion of the film formation chamber to supply a process gas onto a film formation face of the substrate, and a cooling part suppressing a temperature increase of the process gas; a heater heating the substrate to 1500° C. or higher; and a plate opposed to a bottom face of the gas supplier, where first opening parts of the nozzles are formed, in the film formation chamber, and arranged away from the bottom face, in which the plate includes a plurality of second opening parts having a smaller diameter than the first opening parts, and arranged substantially uniformly in a plane of the plate, and a partition protruded on an opposed face to the gas supplier and separating the plane of the plate into regions.Type: ApplicationFiled: October 24, 2022Publication date: February 9, 2023Inventors: Yoshiaki DAIGO, Takuto UMETSU, Akio ISHIGURO
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Publication number: 20220195618Abstract: A vapor phase growth apparatus according to an embodiment includes a reaction chamber; a substrate holder having a holding wall capable holding an outer periphery of the substrate; a process gas supply part provided above the reaction chamber, the process gas supply part having a first region supplying a first process gas and a second region around the first region supplying a second process gas having a carbon/silicon atomic ratio higher than that of the first process gas, an inner peripheral diameter of the second region being 75% or more and 130% or less of a diameter of the holding wall; a sidewall provided between the process gas supply part and the substrate holder, an inner peripheral diameter of the sidewall being 110% or more and 200% or less of an outer peripheral diameter of the second region; a first heater; a second heater; and a rotation driver.Type: ApplicationFiled: March 9, 2022Publication date: June 23, 2022Inventors: Yoshiaki DAIGO, Akio ISHIGURO, Hideki ITO
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Patent number: 11299821Abstract: A vapor phase growth apparatus according to an embodiment includes a reaction chamber; a substrate holder having a holding wall capable holding an outer periphery of the substrate; a process gas supply part provided above the reaction chamber, the process gas supply part having a first region supplying a first process gas and a second region around the first region supplying a second process gas having a carbon/silicon atomic ratio higher than that of the first process gas, an inner peripheral diameter of the second region being 75% or more and 130% or less of a diameter of the holding wall; a sidewall provided between the process gas supply part and the substrate holder, an inner peripheral diameter of the sidewall being 110% or more and 200% or less of an outer peripheral diameter of the second region; a first heater; a second heater; and a rotation driver.Type: GrantFiled: February 4, 2020Date of Patent: April 12, 2022Assignee: NuFlare Technology, Inc.Inventors: Yoshiaki Daigo, Akio Ishiguro, Hideki Ito
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Publication number: 20210381128Abstract: A vapor phase growth apparatus of an embodiment includes: a reactor; a first gas chamber provided above the reactor, a first process gas being introduced into the first gas chamber; a plurality of first gas conduits for supplying the first process gas from the first gas chamber to the reactor, each of the first gas conduits having a predetermined length; and a first adjustment conduit inserted to an upper side of one of the plurality of first gas conduits. The first adjustment conduit has as annular protrusion provided on an outer periphery of an upper end portion and is removable from the first gas conduit.Type: ApplicationFiled: August 25, 2021Publication date: December 9, 2021Inventors: Yoshiaki DAIGO, Masayoshi YAJIMA, Kunihiko SUZUKI, Akio ISHIGURO
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Publication number: 20210180208Abstract: According to an embodiment, provided is a vapor phase growth apparatus including: a reactor; a first gas chamber provided above the reactor, a first process gas being introduced into the first gas chamber; and a plurality of first gas flow paths supplying the first process gas from the first gas chamber to the reactor, in which at least one of the plurality of gas flow paths has a first region and a second region located between the first region and the reactor, the first region has a first opening cross-sectional area in a plane perpendicular to a direction of a flow of the first process gas and a first length in the direction, the second region has a second opening cross-sectional area in the plane perpendicular to the direction and a second length in the direction, the first opening cross-sectional area is smaller than the second opening cross-sectional area, and the first length is equal to or less than the second length.Type: ApplicationFiled: February 1, 2021Publication date: June 17, 2021Applicant: NuFlare Technology, Inc.Inventors: Yoshiaki DAIGO, Masayoshi YAJIMA, Kunihiko SUZUKI, Akio ISHIGURO
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Publication number: 20200190692Abstract: A vapor phase growth apparatus according to an embodiment includes a reaction chamber; a substrate holder having a holding wall capable holding an outer periphery of the substrate; a process gas supply part provided above the reaction chamber, the process gas supply part having a first region supplying a first process gas and a second region around the first region supplying a second process gas having a carbon/silicon atomic ratio higher than that of the first process gas, an inner peripheral diameter of the second region being 75% or more and 130% or less of a diameter of the holding wall; a sidewall provided between the process gas supply part and the substrate holder, an inner peripheral diameter of the sidewall being 110% or more and 200% or less of an outer peripheral diameter of the second region; a first heater; a second heater; and a rotation driver.Type: ApplicationFiled: February 4, 2020Publication date: June 18, 2020Inventors: Yoshiaki DAIGO, Akio ISHIGURO, Hideki ITO
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Patent number: 8399024Abstract: A method of producing water-insoluble anti-cancer drug in the form of particulates, the method including preparing a water-insoluble anti-cancer drug having at least one multiple bond in the structure, and irradiating said water-insoluble anti-cancer drug with a laser beam having a wavelength of a low absorption portion in the vicinity of the foot of an absorption curve on the long wavelength side within the absorption band until said water-insoluble anti-cancer drug is formed into particulates having an average particle diameter of 50 to 200 nm.Type: GrantFiled: September 10, 2010Date of Patent: March 19, 2013Assignee: Ebara CorporationInventors: Hiroyuki Kato, Isao Umeda, Kazuo Watanabe, Kazuya Hirata, Akio Ishiguro, Tetsu Go
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Publication number: 20110059183Abstract: A method of producing water-insoluble anti-cancer drug in the form of particulates, the method including preparing a water-insoluble anti-cancer drug having at least one multiple bond in the structure, and irradiating said water-insoluble anti-cancer drug with a laser beam having a wavelength of a low absorption portion in the vicinity of the foot of an absorption curve on the long wavelength side within the absorption band until said water-insoluble anti-cancer drug is formed into particulates having an average particle diameter of 50 to 200 nm.Type: ApplicationFiled: September 10, 2010Publication date: March 10, 2011Applicant: EBARA CORPORATIONInventors: Hiroyuki KATO, Isao Umeda, Kazuo Watanabe, Kazuya Hirata, Akio Ishiguro, Tetsu Go
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Publication number: 20070264350Abstract: A water-insoluble medicine in the form of particulates, having an average particle diameter of 50 to 200 nm; and a particulate complex of the water-insoluble medicine and a polymer electrolyte, having an average particle diameter of 50 to 250 nm.Type: ApplicationFiled: May 15, 2007Publication date: November 15, 2007Applicant: EBARA CORPORATIONInventors: Hiroyuki KATO, Isao Umeda, Kazuo Watanabe, Kazuya Hirata, Akio Ishiguro, Tetsu Go