Patents by Inventor Akio Kikkawa

Akio Kikkawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7021487
    Abstract: A metal container to be filled with a halogen containing gas, with the inner surface processed with a polishing agent. The gas has a reduced purity decline by the increase of the water content or impurities from the inner surface of the container which is absorbed by the gas over the passage of time. The inner surface processing method is improved such that the value of dividing the area of the Si2s peak by the area of the Fe2p3/2 peak in the X-ray photoelectron spectrum of the gas container inner surface with the inner surface process with a polishing agent applied is 0.3 or less.
    Type: Grant
    Filed: August 5, 2003
    Date of Patent: April 4, 2006
    Assignee: Mitsui Chemicals, Inc.
    Inventors: Akio Kikkawa, Shigeo Kanayama, Isao Harada
  • Publication number: 20040026417
    Abstract: A metal container to be filled with a halogen containing gas, with the inner surface processed with a polishing agent. The gas has a reduced purity decline by the increase of the water content or impurities from the inner surface of the container which is absorbed by the gas over the passage of time. The inner surface processing method is improved such that the value of dividing the area of the Si2s peak by the area of the Fe2p3/2 peak in the X-ray photoelectron spectrum of the gas container inner surface with the inner surface process with a polishing agent applied is 0.3 or less.
    Type: Application
    Filed: August 5, 2003
    Publication date: February 12, 2004
    Applicant: Mitsui Chemicals, Inc.
    Inventors: Akio Kikkawa, Shigeo Kanayama, Isao Harada
  • Patent number: 6440293
    Abstract: An electrode for electrolyzing an electrolyte comprising an ammonium fluoride (NH4F)-hydrogen fluoride (HF)-containing molten salt and having a composition ratio (HF/NH4F) of 1 to 3 to prepare a nitrogen trifluoride (NF3) gas and an electrolyte for use in the preparation of NF3 gas, and a preparation method of the NF3 gas by the use of the electrode and the electrolyte. The electrode comprises nickel having 0.07 wt % or less of Si content and containing a transition metal other than nickel. The electrolyte also contains a transition metal other than nickel.
    Type: Grant
    Filed: December 20, 2000
    Date of Patent: August 27, 2002
    Assignee: Mitsui Chemicals, Inc.
    Inventors: Tatsuma Morokuma, Hiromi Hayashida, Akio Kikkawa
  • Patent number: 6361679
    Abstract: A process for producing high-purity nitrogen trifluoride gas by molten salt electrolysis using a nickel electrode and ammonium hydrogenfluoride as an electrolyte, wherein carbon element constituting impurity gases entrained in a crude gas, among impurities in the nickel electrode as an anode is controlled to an amount of 400 wt ppm or less. The process allows high-purity nitrogen trifluoride gas to be produced with a purity of 4N or higher.
    Type: Grant
    Filed: February 3, 2000
    Date of Patent: March 26, 2002
    Assignee: Mitsui Chemicals, Inc.
    Inventors: Akio Kikkawa, Tatsuma Morokuma, Hiromi Hayashida
  • Publication number: 20010030131
    Abstract: An electrode for electrolyzing an electrolyte comprising an ammonium fluoride (NH4F)-hydrogen fluoride (HF)-containing molten salt and having a composition ratio (HF/NH4F) of 1 to 3 to prepare a nitrogen trifluoride (NF3) gas and an electrolyte for use in the preparation of NF3 gas, and a preparation method of the NF3 gas by the use of the electrode and the electrolyte. The electrode comprises nickel having 0.07 wt % or less of Si content and containing a transition metal other than nickel. The electrolyte also contains a transition metal other than nickel.
    Type: Application
    Filed: December 20, 2000
    Publication date: October 18, 2001
    Inventors: Tatsuma Morokuma, Hiromi Hayashida, Akio Kikkawa
  • Patent number: 4960581
    Abstract: The method for preparing a gaseous metallic floride is here disclosed which comprises reacting a metal or its oxide with a fluorine gas or nitrogen trifluoride gas, the aforesaid method being characterized by comprising the steps of mixing the metal or its oxide with a molding auxiliary comprising a solid metallic fluoride which does not react with fluorine and nitrogen trifluoride; molding the resulting mixture under pressure; and contacting the molded pieces with the fluorine gas or nitrogen trifluoride gas, while the molded pieces are heated.
    Type: Grant
    Filed: March 13, 1989
    Date of Patent: October 2, 1990
    Assignee: Mitsui Toatsu Chemicals, Inc.
    Inventors: Isao Harada, Yukihiro Yoda, Naruyuki Iwanaga, Toshihiko Nishitsuji, Akio Kikkawa
  • Patent number: D544831
    Type: Grant
    Filed: June 20, 2005
    Date of Patent: June 19, 2007
    Assignee: Sumitomo Rubber Industries, Ltd.
    Inventors: Akio Kikkawa, Nariya Okubo