Abstract: A nonvolatile semiconductor memory device includes a bit voltage adjusting circuit which, for each bit line, fixes potentials of a selected bit line and a non-selected bit line to a predetermined potential to perform a memory operation and a data voltage adjusting circuit which, for each data line, fixes potentials of a selected data line and a non-selected data line to a predetermined potential to perform a memory operation. Each of the voltage adjusting circuits includes an operational amplifier and a transistor, a voltage required for a memory operation is input to the non-inverted input terminal of the operational amplifier, and the inverted input terminal of the operational amplifier is connected to the bit line or the data line, so that the potential of the bit line or the data line is fixed to a potential of the non-inverted input terminal of the operational amplifier.

Abstract: A nonvolatile semiconductor memory device includes a bit voltage adjusting circuit which, for each bit line, fixes potentials of a selected bit line and a non-selected bit line to a predetermined potential to perform a memory operation and a data voltage adjusting circuit which, for each data line, fixes potentials of a selected data line and a non-selected data line to a predetermined potential to perform a memory operation. Each of the voltage adjusting circuits includes an operational amplifier and a transistor, a voltage required for a memory operation is input to the non-inverted input terminal of the operational amplifier, and the inverted input terminal of the operational amplifier is connected to the bit line or the data line, so that the potential of the bit line or the data line is fixed to a potential of the non-inverted input terminal of the operational amplifier.

Abstract: A method of producing silicone-containing aqueous coating compositions excellent in shelf stability of the emulsion and in weather resistance, stain resistance, water resistance and solvent resistance of coatings derived therefrom is provided. The method comprises subjecting an aqueous emulsion prepared in advance by emulsification in an aqueous medium containing a polyalkoxypolysiloxane (A), an unsaturated monomer (B) and an emulsifier (C) so as to attain an oil droplet diameter not more than 1,000 nm to polymerization in the presence of a polymerization initiator (D).

Abstract: A hardened cement-based mass having a corrosive metallic material embedded therein, or containing an aggregate reactive with an alkaline substance, is impregnated with an aqueous solution containing 1 to 50% by weight of a dissolved nitrite of an alkali metal or alkaline earth metal and 0.01 to 20% by weight of a dissolved organic silicon compound such as sodium methylsiliconate or potassium methylsiconate, or a dissolved or emulsified polymer thereof, or with a solution prepared by using an aliphatic alcohol having 1 to 3 carbon atoms, and containing 1 to 50% by weight of a dissolved nitrite of an alkali metal or alkaline earth metal and 0.01 to 20% by weight of an dissolved organic silicon compound such as methyltrimethoxysilane or ethyltrimethoxysilane, or a dissolved polymer thereof, and is allowed to dry in the air. Alternatively, the mass is coated with an unsolidified cement paste, mortar or concrete containing 1 to 25% by weight of a nitrite of an alkali metal or alkaline earth metal and 0.