Patents by Inventor Akio Oosaki

Akio Oosaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6448800
    Abstract: An IC tester includes a detection circuit for detecting a voltage level on a portion of a transmission line on a side thereof, which receives the output signal from an electronic device under test through the transmission line. A predetermined current is pulled in from the transmission line when the voltage level detected by the detection circuit is at a low level and a predetermined current equal to or different from the predetermined current to be pulled in is supplied to the transmission line when the detected voltage level detected by the detection circuit is at a high level.
    Type: Grant
    Filed: June 22, 2000
    Date of Patent: September 10, 2002
    Assignee: Hitachi Electronics Engineering Co., Ltd.
    Inventors: Keiichi Yamamoto, Yoshihiko Hayashi, Akio Oosaki
  • Patent number: 6424201
    Abstract: A diode element circuit uses a junction between the base and collector of a vertical type PNP transistor as a diode, and is further designed that a reverse bias voltage is applied between base and emitter of a parasitic PNP transistor in the vertical type PNP transistor, thereby, a diode having a small leakage current and a high break down voltage is realized without necessitating an additional manufacturing process.
    Type: Grant
    Filed: May 29, 2001
    Date of Patent: July 23, 2002
    Assignee: Hitachi Electronics Engineering Co., Ltd.
    Inventors: Keiichi Yamamoto, Akio Oosaki, Yoshihiko Hayashi
  • Publication number: 20010048337
    Abstract: A diode element circuit uses a junction between the base and collector of a vertical type PNP transistor as a diode, and is further designed that a reverse bias voltage is applied between base and emitter of a parasitic PNP transistor in the vertical type PNP transistor, thereby, a diode having a small leakage current and a high break down voltage is realized without necessitating an additional manufacturing process.
    Type: Application
    Filed: May 29, 2001
    Publication date: December 6, 2001
    Inventors: Keiichi Yamamoto, Akio Oosaki, Yoshihiko Hayashi
  • Patent number: 6275023
    Abstract: A semiconductor device according to the present invention comprises a first switch circuit connected between a transmission line and an input terminal of a comparator and adapted to be turned ON according to a change of a response waveform from High level to Low level to connect an impedance substantially equal to a characteristic impedance of the transmission line to the transmission line, a second switch circuit connected between the transmission line and the input terminal of the comparator and adapted to be turned ON according to a change of the response waveform from Low level to High level to connect an impedance substantially equal to the characteristic impedance of the transmission line to the transmission line, a first voltage generator circuit connected to the first switch circuit for generating a voltage for clamping the level of the response waveform at a certain Low level and a second voltage generator circuit connected to the second switch circuit for generating a voltage for clamping the level
    Type: Grant
    Filed: February 2, 2000
    Date of Patent: August 14, 2001
    Assignee: Hitachi Electronics Engineering Co., Ltd.
    Inventors: Akio Oosaki, Yoshihiko Hayashi