Patents by Inventor Akio Sato

Akio Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10504598
    Abstract: A non-volatile semiconductor storage device includes a memory cell array and a control circuit configured to control a data write operation for the memory cell array in a first or second write mode in response to a write command sequence. In the first write mode, the control circuit performs a first write operation, which includes an operation in which one or more bit lines are charged according to write data and an operation in which a write voltage is applied to a selected word line according to address data included in the write command sequence. In the second write mode, the control circuit performs a second write operation, which includes the operation in which the one or more bit lines are charged according to the write data and does not include the operation in which the write voltage is applied to the selected word line.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: December 10, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Kazuto Uehara, Yoshikazu Harada, Kenta Shibasaki, Junichi Sato, Akio Sugahara
  • Publication number: 20190362761
    Abstract: A semiconductor storage device includes a sense amplifier configured to read and program data in memory cells, a first latch circuit to store read data or program data, a second latch circuit to store the first data transferred from the first latch circuit or the second data before the second data is transferred into the first latch circuit, an input/output circuit to output the first data stored in the second latch circuit and to transfer the second data received thereby to the second latch circuit, and a control circuit. Upon receiving a read command while the control circuit is performing a program operation on program data stored in second latch circuit, the control circuit interrupts the program operation to perform the read operation and resumes the program operation on the program data in response to a resume write command sequence that does not include the program data.
    Type: Application
    Filed: August 29, 2018
    Publication date: November 28, 2019
    Inventors: Junichi SATO, Akio SUGAHARA
  • Publication number: 20190326393
    Abstract: A MOSFET that has a drain region and a source region on an upper surface of a semiconductor substrate and a gate electrode that is formed on the semiconductor substrate, and an element separation insulating film that includes an opening portion which exposes an active region, on the semiconductor substrate, are formed. At this point, a gate leading-out interconnection that overlaps the element separation insulating film when viewed from above, and that is integrally combined with the gate electrode is formed in a position where the gate leading-out interconnection does not extend over a distance between both the drain region and the source region when viewed from above, on a region that is exposed from the gate electrode.
    Type: Application
    Filed: February 1, 2019
    Publication date: October 24, 2019
    Applicant: HITACHI, LTD.
    Inventors: Masahiro MASUNAGA, Akio SHIMA, Shintaroh SATO, Ryo KUWANA
  • Publication number: 20190319103
    Abstract: The purpose of the present invention is to provide a semiconductor device comprising an epitaxial layer formed on a SiC substrate, and a CMOS formed in the top part of the epitaxial layer, wherein growth of any defects present at the interface between the SiC substrate and the epitaxial layer is suppressed, and the reliability of the semiconductor device is improved. As a means to achieve the foregoing, a semiconductor device is formed such that the distance from a p-type diffusion layer to the interface between an n-type epitaxial layer and an n-type semiconductor substrate is larger than the thickness of a depletion layer that extends from the p-type diffusion layer to the back side of the n-type semiconductor substrate in response to the potential difference between a substrate electrode and another substrate electrode.
    Type: Application
    Filed: October 24, 2017
    Publication date: October 17, 2019
    Inventors: Masahiro MASUNAGA, Shintaroh SATO, Akio SHIMA, Digh HISAMOTO
  • Publication number: 20190282722
    Abstract: A gas processing apparatus of an embodiment includes a gas processing unit, a flow forming unit, an AC power supply, and first and second filters. The gas processing unit includes a plurality of stacks each having a dielectric substrate, a first to a third electrode. The flow forming unit forms a flow of a target gas flowing toward the gas processing unit. The AC power supply applies an AC voltage across the first, second electrodes and the third electrode so as to generate plasma induced flows of the target gas between the dielectric substrates. The first filter is disposed at an upstream of the gas processing unit, and removes ozone. The second filter is disposed at a downstream of the gas processing unit, and removes ozone.
    Type: Application
    Filed: August 24, 2018
    Publication date: September 19, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Akio UI, Masato AKITA, Yosuke SATO
  • Publication number: 20190268480
    Abstract: An image forming apparatus includes: an operation display device that includes an operation display device body, a front light emission portion and a rear light emission portion, the operation display device body including an operation display provided in one face of the operation display device body, the front light emission portion being provided on an upper side of the face of the operation display device body where the operation display is provided, the front light emission portion emitting light in accordance with a processing status, the rear light emission portion being provided on an upper side of an opposite face of the operation display device body to the operation display, the rear light emission portion emitting light in synchronization with the front light emission portion, wherein the operation display device is attached to an upper portion of a body of the image forming apparatus.
    Type: Application
    Filed: May 14, 2019
    Publication date: August 29, 2019
    Applicant: FUJI XEROX CO., LTD.
    Inventors: Mitsuyuki ISHIDA, Yuki ONO, Satoru KAIYA, Hiromasa KANNO, Tatsuya SATO, Osamu TAKENOUCHI, Akio FUKUYAMA, Bokryong LEE
  • Patent number: 10332997
    Abstract: There is provided a semiconductor device that improves reliability. The impurity concentrations of a p++ source region and a p++ drain region are 5×1020 cm?3 or more. The channel-region-side end portion of a first insulating film is disposed on a p+ source region. The end portion has an inclined surface where the first insulating film thickness is reduced from the p+ source region toward a channel region. The channel-region-side end portion of a second insulating film is disposed on a p+ drain region. The end portion has an inclined surface where the second insulating film thickness is reduced from the p+ drain region toward the channel region. A gate electrode is disposed on the channel region, the p+ source region, the p+ drain region, and the inclined surfaces of the first and the second insulating films through a gate insulating film including an aluminum oxide film.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: June 25, 2019
    Assignee: HITACHI, LTD.
    Inventors: Shintaroh Sato, Masahiro Masunaga, Akio Shima
  • Patent number: 10332906
    Abstract: A dry etching method includes a process of, while continuously applying bias power using an ion species to a material to be processed including a first conductive member, a first insulating film provided on the first conductive member, a second conductive member provided on the first insulating film, and a second insulating film provided on the second conductive member, dry etching the second insulating film to expose the second conductive member. A time for which the bias power is continuously applied is set to 50 microseconds or less and a duty ratio of the bias power is set to 50% or less.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: June 25, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Kaori Narumiya, Hisataka Hayashi, Keisuke Kikutani, Akio Ui, Yosuke Sato
  • Patent number: 10320997
    Abstract: An image forming apparatus includes: an operation display device that includes an operation display device body, a front light emission portion and a rear light emission portion, the operation display device body including an operation display provided in one face of the operation display device body, the front light emission portion being provided on an upper side of the face of the operation display device body where the operation display is provided, the front light emission portion emitting light in accordance with a processing status, the rear light emission portion being provided on an upper side of an opposite face of the operation display device body to the operation display, the rear light emission portion emitting light in synchronization with the front light emission portion, wherein the operation display device is attached to an upper portion of a body of the image forming apparatus.
    Type: Grant
    Filed: July 5, 2017
    Date of Patent: June 11, 2019
    Assignee: FUJI XEROX CO., LTD.
    Inventors: Mitsuyuki Ishida, Yuki Ono, Satoru Kaiya, Hiromasa Kanno, Tatsuya Sato, Osamu Takenouchi, Akio Fukuyama, Bokryong Lee
  • Patent number: 10309530
    Abstract: An automatic transmission where the control portion controls the adjustment solenoid valve so that the circulation hydraulic pressure equals to a second circulation hydraulic pressure higher than the first circulation hydraulic pressure when the rotational speed difference between the output rotational speed of the fluid transmission device and the rotational speed of the driving source is more than the predetermined rotational speed.
    Type: Grant
    Filed: November 9, 2015
    Date of Patent: June 4, 2019
    Assignees: AISIN AW CO., LTD., TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yuhei Yoshioka, Yasushi Sato, Toshihiko Kamiya, Akio Murasugi, Masahide Ichikawa
  • Patent number: 10301401
    Abstract: An object of the present invention is to provide a novel catalyst for olefin (co)polymer production, which has high activity without using a large amount of a cocatalyst and is aimed for obtaining a particulate olefin (co)polymer. The invention relates to an olefin polymerization catalyst which comprises: a solid carrier (1) that has been brought into contact with a specific compound; and a metal catalyst component (2) that contains a transition metal compound (C) containing a transition metal M belonging to Group 9, 10, or 11 of the periodic table and has a reactive group Ra.
    Type: Grant
    Filed: July 23, 2015
    Date of Patent: May 28, 2019
    Assignees: JAPAN POLYETHYLENE CORPORATION, JAPAN POLYPROPYLENE CORPORATION
    Inventors: Yohei Konishi, Yasuo Maruyama, Naomasa Sato, Akio Tanna
  • Patent number: 10300559
    Abstract: A laser drilling method is a laser drilling method for performing drilling on a workpiece by use of a laser beam. The laser drilling method includes, after machining a through hole by radiating the laser beam to the workpiece (S100), scanning with the laser beam centered around the through hole toward a radial direction while changing a radiation output of the laser beam (S200).
    Type: Grant
    Filed: May 6, 2014
    Date of Patent: May 28, 2019
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Mitsutaka Yoshida, Natsuki Sugiyama, Akio Sato, Kenji Kidera, Masaru Setodoi, Taku Yamaguchi
  • Publication number: 20190148546
    Abstract: There is provided a semiconductor device that improves reliability. The impurity concentrations of a p|| source region and a p|| drain region are 5×1020 cm?3 or more. The channel-region-side end portion of a first insulating film is disposed on a p+ source region. The end portion has an inclined surface where the first insulating film thickness is reduced from the p? source region toward a channel region. The channel-region-side end portion of a second insulating film is disposed on a p+ drain region. The end portion has an inclined surface where the second insulating film thickness is reduced from the p+ drain region toward the channel region. A gate electrode is disposed on the channel region, the p+ source region, the p+ drain region, and the inclined surfaces of the first and the second insulating films through a gate insulating film including an aluminum oxide film.
    Type: Application
    Filed: October 23, 2018
    Publication date: May 16, 2019
    Inventors: Shintaroh SATO, Masahiro MASUNAGA, Akio SHIMA
  • Patent number: 10071444
    Abstract: A laser cladding apparatus includes a powder supplier to supply metal powder to a portion to be processed, a laser to irradiate the portion to be processed with laser so as to melt the metal powder for cladding, and a controller. The powder supplier includes a gas pressure gauge, and the controller stores, as an initial value, a gas pressure value measured by the gas pressure gauge when the metal powder supplied by the gas pressure reaches the portion to be cladding-processed. In operation after storing the initial value, the controller sets, as a reference time, timing when the gas pressure gauge measures a same pressure as the initial value, and outputs a start signal for laser irradiation to the laser based on the reference time.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: September 11, 2018
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Akio Sato, Yoshinori Ishikawa
  • Patent number: 9623514
    Abstract: In a powder supply method in cladding, an outlet pressure of a coaxial-nozzle side of a supply pipe connecting a feeder to a coaxial nozzle is set within a predetermined range, and powder is supplied from the feeder to the coaxial nozzle.
    Type: Grant
    Filed: April 28, 2015
    Date of Patent: April 18, 2017
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Shingo Iwatani, Akio Sato, Yoshinori Ishikawa, Kenji Kidera
  • Patent number: 9533373
    Abstract: Provided is a powder overlay nozzle that can increase the quality of an overlay layer formed on processing portion of a workpiece, and that can greatly increase workpiece productivity and maintainability. The powder overlay nozzle includes an inner nozzle member including a laser passage for passing laser beam, and an outer nozzle member externally fitted on the inner nozzle member. Between the inner nozzle member and the outer nozzle member, a discharge space for passing powder is formed. The outer nozzle member includes a supply channel for supplying the powder to the discharge space in a direction inclined with respect to an axis L of the powder overlay nozzle.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: January 3, 2017
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Akio Sato, Yoshinori Ishikawa
  • Patent number: 9376272
    Abstract: Provided is a powder supply device that can stably supply powder from a main hopper to a powder supply means including a sub-hopper without requiring component replacement and the like. The powder supply device is provided with: a first piping that guides powder accumulated in a main hopper downward; a second piping that is connected to the first piping at a lower end portion thereof while intersecting with the first piping, and that guides the powder guided by the first piping to a sub-hopper; and a switching valve that pressure-feeds the powder temporarily deposited while forming an angle of repose at an intersecting portion of the first piping and the second piping, to the sub-hopper.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: June 28, 2016
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Akio Sato, Kenji Kidera, Norikazu Kume
  • Publication number: 20160121428
    Abstract: A laser cladding apparatus includes: a powder supplying device to supply metal powder to a portion to be processed; a laser irradiation device to irradiate the portion to be processed with laser so as to melt the metal powder for cladding; and control means. The powder supplying device includes a differential pressure gauge, and the control means stores, as an initial value, a gas pressure value measured by the differential pressure gauge when metal powder supplied by the gas pressure reaches the portion to be cladding-processed. In operation after storing the initial value, the control means sets, as a reference time, timing when the differential pressure gauge measures a same pressure as the initial value, and outputs a start signal for laser irradiation to the laser irradiation device based on the reference time.
    Type: Application
    Filed: August 3, 2015
    Publication date: May 5, 2016
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Akio SATO, Yoshinori Ishikawa
  • Publication number: 20160101484
    Abstract: To provide a powder cladding nozzle that can, even when the area of a portion to be machined of a workpiece is large, maintain the quality of a cladding layer that is formed on the portion to be machined of the workpiece and thus significantly increase the productivity of workpieces. The passage width X of a discharge passage that is formed between an inner nozzle member and an outer nozzle member becomes wider toward a discharge outlet.
    Type: Application
    Filed: August 18, 2015
    Publication date: April 14, 2016
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Shingo IWATANI, Akio SATO, Yoshinori ISHIKAWA
  • Publication number: 20160082549
    Abstract: A laser drilling method is a laser drilling method for performing drilling on a workpiece by use of a laser beam. The laser drilling method includes, after machining a through hole by radiating the laser beam to the workpiece (S100), scanning with the laser beam centered around the through hole toward a radial direction while changing a radiation output of the laser beam (S200).
    Type: Application
    Filed: May 6, 2014
    Publication date: March 24, 2016
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Mitsutaka YOSHIDA, Natsuki SUGIYAMA, Akio SATO, Kenji KIDERA, Masaru SETODOI, Taku YAMAGUCHI