Patents by Inventor Akio Sawabe

Akio Sawabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7776426
    Abstract: A ceramic circuit substrate and a manufacturing method thereof are provided, which has excellent thermal shock tolerance by forming a gap between a circuit pattern section and a ceramic substrate, and has a capability of preventing etchant residue from remaining therein. The ceramic circuit substrate according to the present invention includes patterns of brazing material (8 and 9) formed on the ceramic substrate, and a circuit pattern section jointed to the patterns of brazing material. The patterns of brazing material includes a line pattern along the edge of the circuit pattern. Also, a gap is formed within the line pattern located between the ceramic substrate and the circuit pattern.
    Type: Grant
    Filed: March 2, 2006
    Date of Patent: August 17, 2010
    Assignee: Dowa Metaltech Co., Ltd.
    Inventors: Yoshiharu Itahana, Junji Nakamura, Akio Sawabe
  • Publication number: 20060292383
    Abstract: To provide a metal-coated substrate capable of significantly improving an adhesion strength and stability between metal and a plastic film. By laminating a thermoplastic film layer 2 on a base body plastic film layer 3 to obtain a laminated plastic film, and a metal layer 1 is formed on the thermoplastic film layer 2, while controlling a temperature of the laminated plastic film.
    Type: Application
    Filed: November 25, 2004
    Publication date: December 28, 2006
    Inventors: Shuichi Kohayashi, Akio Sawabe, Yukihiro Kitamura
  • Publication number: 20060198994
    Abstract: A ceramic circuit substrate and a manufacturing method thereof are provided, which has excellent thermal shock tolerance by forming a gap between a circuit pattern section and a ceramic substrate, and has a capability to prevent etchant residue from remaining therein. The ceramic circuit substrate according to the present invention includes patterns of brazing material 8 and 9 formed on the ceramic substrate, a circuit pattern section jointed onto the pattern of brazing material; wherein the pattern of brazing material includes a line pattern along the edge of the circuit pattern, and a gap is formed within the line pattern located between the ceramic substrate and the circuit pattern.
    Type: Application
    Filed: March 2, 2006
    Publication date: September 7, 2006
    Inventors: Yoshiharu Itahana, Junji Nakamura, Akio Sawabe
  • Publication number: 20060093838
    Abstract: A metal substrate having high strength and stability of adhesion between a metal film and a plastic film, wherein the metal film can be made thin. The plastic film as a base is placed inside a device for applying a silane coupling agent and is dried at a temperature of 300° C., after which the vaporized silane coupling agent is blown onto the plastic film while the temperature is maintained at 300° C., and the surface of the plastic film is coated with the silane coupling agent. A film of copper is formed by sputtering on the surface of the plastic film thus coated with the coupling agent, and the plastic film provided with the sputtered copper film is coated with a glossy copper coating having the desired thickness using a plating method.
    Type: Application
    Filed: September 21, 2005
    Publication date: May 4, 2006
    Applicant: Dowa Mining Co., Ltd.
    Inventors: Shuichi Kohayashi, Akio Sawabe, Yukihiro Kitamura
  • Patent number: 6506264
    Abstract: A ferromagnetic powder containing iron as the principal component and containing more than 5 to 50 at. % Co, 0.1 to 30 at. % Al, 0.1 to 10 at. % of a rare earth element inclusive of Y, 0.05% by weight or less of an element belonging to Group 1a of the Periodic Table, and 0.1% by weight or less (inclusive of 0% by weight) of an element belonging to Group 2a of the Periodic Table, the powder comprising flat acicular particles having a mean major axis length of 0.01 to 0.40 &mgr;m and a crystallite diameter as determined by X-ray diffraction (Dx) of 50 to 250 angstrom, provided that the cross section diameter in the minor axis direction cut perpendicular to the major axis has a larger width and a smaller width, and that this cross section ratio in the minor axis direction, which is a larger width to smaller width ratio, uniformly yields a value of greater than 1, preferably 1.5 or higher, and the powder yielding a &sgr;s/Dx ratio of 0.
    Type: Grant
    Filed: August 10, 2000
    Date of Patent: January 14, 2003
    Assignee: Dowa Mining Co., Ltd.
    Inventors: Seiichi Hisano, Kazuhisa Saito, Kazushi Sano, Akio Sawabe, Akito Inoue, Kenichi Inoue