Abstract: A substrate evaluation chip is used to perform a test for evaluating a thermal characteristic of a mounting substrate that is mountable a power semiconductor. The substrate evaluation chip includes an insulating substrate bonded with the mounting substrate, and a heating pattern that is formed on a surface of the insulating substrate by a metallic film and is arranged by having a predetermined shape that is optimized to beat the insulating substrate more uniformly. The insulating substrate is a substrate in which an insulating film is formed on a surface of a single crystal substrate having a thermal conductivity of 250 [W/mK] or more.

Abstract: A bonding device (100) bonds at least one component (C) to a substrate (B) using a metal material (M). The bonding device (100) includes a wall section (20), at least one pressing section (40), and a rotational shaft (30). The rotational shaft (30) is fixed to the wall section (20). Each pressing section (40) has an arm (42) and a presser (43) or a substrate supporting member (90). The arm (42) extends from the rotational shaft (30). The arm (42) pivots about the rotational shaft (30). The presser (43) presses the component (C). The substrate supporting member (90) is disposed on a reference surface (142). The substrate supporting member (90) supports the substrate (B). The component (C) is bonded to the substrate (B) through point contact of the presser (43) with the component (C) or point contact of the substrate supporting member (90) with the reference surface (142).

Abstract: A substrate evaluation chip is used to perform a test for evaluating a thermal characteristic of a mounting substrate that is mountable a power semiconductor. The substrate evaluation chip includes an insulating substrate bonded with the mounting substrate, and a heating pattern that is formed on a surface of the insulating substrate by a metallic film and is arranged by having a predetermined shape that is optimized to beat the insulating substrate more uniformly. The insulating substrate is a substrate in which an insulating film is formed on a surface of a single crystal substrate having a thermal conductivity of 250 [W/mK] or more.

Abstract: A bonding device (100) bonds at least one component (C) to a substrate (B) using a metal material (M). The bonding device (100) includes a wall section (20), at least one pressing section (40), and a rotational shaft (30). The rotational shaft (30) is fixed to the wall section (20). Each pressing section (40) has an arm (42) and a presser (43) or a substrate supporting member (90). The arm (42) extends from the rotational shaft (30). The arm (42) pivots about the rotational shaft (30). The presser (43) presses the component (C). The substrate supporting member (90) is disposed on a reference surface (142). The substrate supporting member (90) supports the substrate (B). The component (C) is bonded to the substrate (B) through point contact of the presser (43) with the component (C) or point contact of the substrate supporting member (90) with the reference surface (142).

Abstract: A method of manufacturing a semiconductor device can suppress the generation of burrs when an array of integrated circuits to which a supporting member is bonded for assistance is separated into chips. The supporting member having thinned regions (or void regions which are openings in the supporting member) located correspondingly beneath the scribing lines extending between the integrated circuits is bonded by an adhesive to the back side of a semiconductor substrate on which integrated circuits are arrayed at the primary side. Then, a dicing tape is attached to the support member to secure the entire assembly, and the assembly of the integrated circuits, the semiconductor substrate, the adhesive, and the supporting member are cut along the scribing lines, and then the dicing tape is removed.

Abstract: The present processing apparatus blocks off such a portion of a flow of a plating solution (17) that is other than a vicinity of a liquid surface, by using a first partition plate (15) whose lower end is in close contact with a bottom of a plating tank (11) and whose upper end is at a position lower than a liquid surface. Therefore, the plating solution (17) flowing at the bottom of the plating tank (11) flows upwards along the first partition plate (15). At this time, heavy foreign substances do not tend to follow such an upward movement of the plating solution (17), and therefore sink and accumulate in a vicinity of the lower end of the first partition plate (15), so as not to flow into a downstream side of the plate. With this arrangement, the present processing apparatus can remove the heavy foreign substances from the plating solution (17) without relying solely on a filter of a circulation pipe (10).

Abstract: The present invention provides a green mirror having both glare proof property and pollution preventive property and furthermore an excellent visibility by controlling the spectral reflection spectrum of the mirror comprising a photo catalyst titanium oxide layer. The mirror comprises a glass substrate, a reflection film, and a composite film with a colored layer, a titanium oxide layer and a silicon oxide layer laminated sucessively, wherein the spectral reflectance peak is 490 to 540 nm.

Abstract: A method of manufacturing a semiconductor device can suppress the generation of burrs when an array of integrated circuits to which a supporting member is bonded for assistance is separated into chips. The supporting member having thinned regions (or void regions which are openings in the supporting member) located correspondingly beneath the scribing lines extending between the integrated circuits is bonded by an adhesive to the back side of a semiconductor substrate on which integrated circuits are arrayed at the primary side. Then, a dicing tape is attached to the support member to secure the entire assembly, and the assembly of the integrated circuits, the semiconductor substrate, the adhesive, and the supporting member are cut along the scribing lines, and then the dicing tape is removed.

Abstract: The present processing apparatus blocks off such a portion of a flow of a plating solution (17) that is other than a vicinity of a liquid surface, by using a first partition plate (15) whose lower end is in close contact with a bottom of a plating tank (11) and whose upper end is at a position lower than a liquid surface. Therefore, the plating solution (17) flowing at the bottom of the plating tank (11) flows upwards along the first partition plate (15). At this time, heavy foreign substances do not tend to follow such an upward movement of the plating solution (17), and therefore sink and accumulate in a vicinity of the lower end of the first partition plate (15), so as not to flow into a downstream side of the plate. With this arrangement, the present processing apparatus can remove the heavy foreign substances from the plating solution (17) without relying solely on a filter of a circulation pipe (10).

Abstract: A die bonding apparatus includes a device for making a coarse surface in a region where an identifier is to be applied to a lead frame; an application device for applying the identifier to the coarse surface region, a dividing device for dividing a wafer into chips, a test device for testing the wafer which has not been divided into chips yet in positions corresponding to the prospective chips, a storage device for storing information about positions of the chips on the wafer and the test results, a die bonding device picking out the chips from the wafer for die-bonding them to the lead frame having the identifier, a reading device for reading the identifier of the lead frame to which the chips are to be die-bonded, an information processing device for adding information which the identifier contains to the test results and position information about each of the chips to make test information, and an output device for outputting the test information.

Abstract: An apparatus for sealing a semiconductor package, which is used for performing a sealing operation, includes a unit for emitting ultraviolet rays, and a package base having an entrance surface and an exit surface. The package base between the entrance surface and the exit surface is made of quartz glass. The emitting means closely contacts the entrance surface. And ultraviolet rays emitting by the emitting unit are applied through the quartz glass to the semiconductor package which is mounted on the exit surface.