Abstract: To reduce the on-resistance in a semiconductor device, such as a trench lateral power MOSFET, a trench etching region forms a mesh pattern in which a first trench section, formed in an active region, and a second trench section, formed in a gate region for leading out gate polysilicon to a substrate surface, intersect each other. An island-like non-trench region, which is left without being subjected to etching, is divided into a plurality of smaller regions by one or more third trench section that connect with the first and second trench sections that form the mesh pattern. In each non-trench region, a contact section for connecting a drain region (or a source region) and an electrode is formed so as to be spread over all of the smaller regions in the non-trench region.

Abstract: A semiconductor device is provided that can be manufactured by a simpler process than a conventional lateral trench power MOSFET for use with an 80V breakdown voltage, and which has a lower device pitch and lower on-state resistance per unit area than a conventional lateral power MOSFET for use with a lower breakdown voltage than 80V. A gate oxide film is formed thinly along the lateral surfaces of a trench at a uniform thickness. Then, a gate oxide film is formed along the bottom surface of the trench by selective oxidation so as to be thicker than the gate oxide film on the lateral surfaces of the trench and so as to become progressively thicker from the edge of the bottom surface of the trench toward drain polysilicon.

Abstract: A trench-type lateral power MOSFET is manufactured by forming an n?-type diffusion region, which will be a drift region, on a p?-type substrate; selectively removing a part of substrate and a part of n?-type diffusion region to form trenches; forming a gate oxide film of 0.05 ?m in thickness in each trench; forming a polycrystalline silicon gate layer on gate oxide film; forming a p?-type base region and an n+-type diffusion region, which will be a source region, in the bottom of each trench; and forming an n+-type diffusion region, which will be a drain region, in the surface portion of n?-type diffusion region. The MOSFET has reduced device pitch, a reduced on-resistance per unit area and a simplified manufacturing process.

Abstract: Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Therefore, the TLPM and the planar devices can be connected electrically to each other by resulting metal wiring layers and polysilicon layers without the need for performing wire bonding on a printed circuit board.

Abstract: A semiconductor structure with device trench and a semiconductor device in the device trench, that enables realization of high integration, lowered on-resistance, reduction in switching losses and a high operation speed in a semiconductor device provided with a lateral IGBT, and that prevents malfunctions such as latchup when IGBTs or an IGBT and CMOS devices are integrated together. The structure includes an SOI substrate having a supporting substrate, an oxide film and a p?-semiconductor layer. An island-like element-forming region is isolated by a trench isolation region from surroundings. The trench isolation region includes an isolation trench with an insulation film on its inner wall. The device trench is formed in the element-forming region. A gate electrode is formed with a gate insulator film in the device trench. A collector region and an emitter region outside are provided respectively on the bottom and the outside of the device trench.

Abstract: Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Therefore, the TLPM and the planar devices can be connected electrically to each other by resulting metal wiring layers and polysilicon layers without the need for performing wire bonding on a printed circuit board.

Abstract: A trench-type lateral power MOSFET is manufactured by forming an n−-type diffusion region, which will be a drift region, on a p−-type substrate; selectively removing a part of substrate and a part of n−-type diffusion region to form trenches; forming a gate oxide film of 0.05 &mgr;m in thickness in each trench; forming a polycrystalline silicon gate layer on gate oxide film; forming a p−-type base region and an n+-type diffusion region, which will be a source region, in the bottom of each trench; and forming an n+-type diffusion region, which will be a drain region, in the surface portion of n−-type diffusion region.

Abstract: To reduce the on-resistance in a semiconductor device, such as a trench lateral power MOSFET, a trench etching region forms a mesh pattern in which a first trench section, formed in an active region, and a second trench section, formed in a gate region for leading out gate polysilicon to a substrate surface, intersect each other. An island-like non-trench region, which is left without being subjected to etching, is divided into a plurality of smaller regions by one or more third trench section that connect with the first and second trench sections that form the mesh pattern. In each non-trench region, a contact section for connecting a drain region (or a source region) and an electrode is formed so as to be spread over all of the smaller regions in the non-trench region.

Abstract: A trench-type lateral power MOSFET is manufactured by forming an n−-type diffusion region, which will be a drift region, on a p−-type substrate; selectively removing a part of substrate and a part of n−-type diffusion region to form trenches; forming a gate oxide film of 0.05 &mgr;m in thickness in each trench; forming a polycrystalline silicon gate layer on gate oxide film; forming a p−-type base region and an n+-type diffusion region, which will be a source region, in the bottom of each trench; and forming an n+-type diffusion region, which will be a drain region, in the surface portion of n30 -type diffusion region. The MOSFET has reduced device pitch, a reduced on-resistance per unit area and a simplified manufacturing process.

Abstract: Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Therefore, the TLPM and the planar devices can be connected electrically to each other by resulting metal wiring layers and polysilicon layers without the need for performing wire bonding on a printed circuit board.

Abstract: A semiconductor device is provided that can be manufactured by a simpler process than a conventional lateral trench power MOSFET for use with an 80V breakdown voltage, and which has a lower device pitch and lower on-state resistance per unit area than a conventional lateral power MOSFET for use with a lower breakdown voltage than 80V. A gate oxide film is formed thinly along the lateral surfaces of a trench at a uniform thickness. Then, a gate oxide film is formed along the bottom surface of the trench by selective oxidation so as to be thicker than the gate oxide film on the lateral surfaces of the trench and so as to become progressively thicker from the edge of the bottom surface of the trench toward drain polysilicon.

Abstract: A trench-type lateral power MOSFET is manufactured by forming an n−-type diffusion region, which will be a drift region, on a p−-type substrate; selectively removing a part of substrate and a part of n−-type diffusion region to form trenches; forming a gate oxide film of 0.05 &mgr;m in thickness in each trench; forming a polycrystalline silicon gate layer on gate oxide film; forming a p−-type base region and an n+-type diffusion region, which will be a source region, in the bottom of each trench; and forming an n+-type diffusion region, which will be a drain region, in the surface portion of n−-type diffusion region.

Abstract: A outerwear comprising of a front body cloth, a rear body cloth, right and left flank cloths having a predetermined width and right and left sleeve cloths, one edge of each right and left flank cloth is sewn to the front body cloth and the other edge of each right and left flank cloth is sewn to the rear body cloth such that each sewing line does not coincide with right and left flank lines, each of the right and left flank cloth is extended to the under-sleeve part sewn to the sleeve cloth; an elongation percentage of each of the front body cloth and the rear body cloth is set high in a horizontal direction thereof.

Abstract: The disclosure is directed to a mold lubricating apparatus for glassware making machines, which is so arranged that nozzle holders 5 having nozzles 12 respectively directed toward mold surfaces of the neck rings from lower portions at opposite sides of the neck molds 13 and through-holes 5a, are connected to opposite ends of air feeding block and oil feeding block 7, 7a disposed on a horizontal bracket 3 provided at the upper portion of a plunger mechanism 1, while nozzle holders having nozzles 17 directed toward mold surfaces during opening of blank molds 18, and through-holes 6a are formed on an air feeding and oil feeding block 6A on the horizontal bracket 3.

Abstract: An apparatus for breaking up and separating waste glass to obtain cullet comprising a grizzly made up of parallel bars arranged at a spacing smaller than the minimum width of projection of three-dimensional extraneous matter and auxiliary parallel bars disposed over one surface of the grizzly and arranged at right angles to the bars to form a lattice, the diagonal dimension of the openings of the lattice being smaller than the maximum width of projection of planar extraneous matter. The lattice is in the form of a rotatable drum with the grizzly positioned on the inner side of the its peripheral portion. The drum-shaped lattice has scraper plates attached to its inner periphery and an inlet for the waste glass and an outlet for the extraneous matter at its opposite ends respectively. The parallel bars can be arranged either annularly or axially with the auxiliary parallel bars being arranged oppositely.

Abstract: Waste glass containing three-dimensional extraneous matter to be removed is dropped onto a grizzly and is thereby broken up by gravity and separated into an undersize portion containing planar fragments of waste glass and of extraneous matter and an oversize portion containing three-dimensional large pieces of waste glass and unbreakable extraneous matter, the grizzly comprising parallel bars arranged at a spacing smaller than the minimum width of projection of the three-dimensional extraneous matter. The oversize portion is repeatedly subjected to the same procedure as above to break up the waste glass to an undersize material within a specified range of sizes and to remove the three-dimensional extraneous matter from the waste glass. A breaking and separating apparatus comprises grizzlies arranged in multi-stage fashion within a passage for dropping the waste glass or a rotatable drum-shaped grizzly having scraping plates.

Abstract: Water is supplied to an inclined drum having a helical wall on its inner peripheral surface to cause the water to flow over the helical wall and also on the inner peripheral surface of the drum and to thereby form a flow of water running from the upper end of the drum to its lower end. Waste glass is fed to the drum while the drum is rotated at a high speed. During falling of the waste glass onto the flow of water, during settling of the waste glass in the water flow while it is being sent toward the drum upper end by the helical wall, and while the settled waste glass is maintained by the high-speed rotation of the drum in a suspension-resembling state in which pieces of the waste glass are dispersible and in rocking motion circumferentially of the drum, extraneous matter is forced toward the drum lower end and run off therefrom due to its resistance per unit weight thereof to the flow of water which resistance is greater than that of the waste glass.

Abstract: A method of breaking up and separating waste glass with use of a lattice comprising a grizzly made up of parallel bars arranged at a spacing smaller than the minimum width of projection of three-dimensional extraneous matter and auxiliary parallel bars disposed over one surface of the grizzly and arranged at right angles to the bars, the diagonal dimension of the openings of the lattice being smaller than the maximum width of projection of planar extraneous matter, the method being characterized by dropping the waste glass onto the grizzly surface of the lattice to break up the waste glass under gravity and to separate the waste glass into an undersize portion passing through the lattice and an oversize portion, and repeatedly subjecting the oversize portion to the aforesaid operation to obtain cullet as an undersize material and to remove the extraneous matter from the waste glass as an oversize material.