Patents by Inventor Akio Sugi
Akio Sugi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7034377Abstract: To reduce the on-resistance in a semiconductor device, such as a trench lateral power MOSFET, a trench etching region forms a mesh pattern in which a first trench section, formed in an active region, and a second trench section, formed in a gate region for leading out gate polysilicon to a substrate surface, intersect each other. An island-like non-trench region, which is left without being subjected to etching, is divided into a plurality of smaller regions by one or more third trench section that connect with the first and second trench sections that form the mesh pattern. In each non-trench region, a contact section for connecting a drain region (or a source region) and an electrode is formed so as to be spread over all of the smaller regions in the non-trench region.Type: GrantFiled: November 24, 2003Date of Patent: April 25, 2006Assignee: Fuji Electric Device Technology Co., Ltd.Inventors: Akio Sugi, Naoto Fujishima, Mutsumi Kitamura, Katsuya Tabuchi
-
Patent number: 7012301Abstract: A semiconductor device is provided that can be manufactured by a simpler process than a conventional lateral trench power MOSFET for use with an 80V breakdown voltage, and which has a lower device pitch and lower on-state resistance per unit area than a conventional lateral power MOSFET for use with a lower breakdown voltage than 80V. A gate oxide film is formed thinly along the lateral surfaces of a trench at a uniform thickness. Then, a gate oxide film is formed along the bottom surface of the trench by selective oxidation so as to be thicker than the gate oxide film on the lateral surfaces of the trench and so as to become progressively thicker from the edge of the bottom surface of the trench toward drain polysilicon.Type: GrantFiled: December 18, 2002Date of Patent: March 14, 2006Assignee: Fuji Electric Co., Ltd.Inventors: Katsuya Tabuchi, Naoto Fujishima, Mutsumi Kitamura, Akio Sugi
-
Patent number: 7005352Abstract: A trench-type lateral power MOSFET is manufactured by forming an n?-type diffusion region, which will be a drift region, on a p?-type substrate; selectively removing a part of substrate and a part of n?-type diffusion region to form trenches; forming a gate oxide film of 0.05 ?m in thickness in each trench; forming a polycrystalline silicon gate layer on gate oxide film; forming a p?-type base region and an n+-type diffusion region, which will be a source region, in the bottom of each trench; and forming an n+-type diffusion region, which will be a drain region, in the surface portion of n?-type diffusion region. The MOSFET has reduced device pitch, a reduced on-resistance per unit area and a simplified manufacturing process.Type: GrantFiled: July 21, 2004Date of Patent: February 28, 2006Assignee: Fuji Electric Co., Inc.Inventors: Naoto Fujishima, Akio Sugi, C. Andre T. Salama
-
Publication number: 20050087800Abstract: Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Therefore, the TLPM and the planar devices can be connected electrically to each other by resulting metal wiring layers and polysilicon layers without the need for performing wire bonding on a printed circuit board.Type: ApplicationFiled: December 14, 2004Publication date: April 28, 2005Applicant: FUJI ELECTRIC CO., LTD.Inventors: Akio Sugi, Naoto Fujishima, Mutsumi Kitamura, Katsuya Tabuchi, Setsuko Wakimoto
-
Publication number: 20050062101Abstract: A semiconductor structure with device trench and a semiconductor device in the device trench, that enables realization of high integration, lowered on-resistance, reduction in switching losses and a high operation speed in a semiconductor device provided with a lateral IGBT, and that prevents malfunctions such as latchup when IGBTs or an IGBT and CMOS devices are integrated together. The structure includes an SOI substrate having a supporting substrate, an oxide film and a p?-semiconductor layer. An island-like element-forming region is isolated by a trench isolation region from surroundings. The trench isolation region includes an isolation trench with an insulation film on its inner wall. The device trench is formed in the element-forming region. A gate electrode is formed with a gate insulator film in the device trench. A collector region and an emitter region outside are provided respectively on the bottom and the outside of the device trench.Type: ApplicationFiled: August 27, 2004Publication date: March 24, 2005Inventors: Akio Sugi, Naoto Fujishima
-
Patent number: 6858500Abstract: Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Therefore, the TLPM and the planar devices can be connected electrically to each other by resulting metal wiring layers and polysilicon layers without the need for performing wire bonding on a printed circuit board.Type: GrantFiled: December 31, 2002Date of Patent: February 22, 2005Assignee: Fuji Electric Co., Ltd.Inventors: Akio Sugi, Naoto Fujishima, Mutsumi Kitamura, Katsuya Tabuchi, Setsuko Wakimoto
-
Publication number: 20040256666Abstract: A trench-type lateral power MOSFET is manufactured by forming an n−-type diffusion region, which will be a drift region, on a p−-type substrate; selectively removing a part of substrate and a part of n−-type diffusion region to form trenches; forming a gate oxide film of 0.05 &mgr;m in thickness in each trench; forming a polycrystalline silicon gate layer on gate oxide film; forming a p−-type base region and an n+-type diffusion region, which will be a source region, in the bottom of each trench; and forming an n+-type diffusion region, which will be a drain region, in the surface portion of n−-type diffusion region.Type: ApplicationFiled: July 21, 2004Publication date: December 23, 2004Applicant: Fuji Electric Co., Ltd.Inventors: Naoto Fujishima, Akio Sugi, C. Andre T. Salama
-
Publication number: 20040178445Abstract: To reduce the on-resistance in a semiconductor device, such as a trench lateral power MOSFET, a trench etching region forms a mesh pattern in which a first trench section, formed in an active region, and a second trench section, formed in a gate region for leading out gate polysilicon to a substrate surface, intersect each other. An island-like non-trench region, which is left without being subjected to etching, is divided into a plurality of smaller regions by one or more third trench section that connect with the first and second trench sections that form the mesh pattern. In each non-trench region, a contact section for connecting a drain region (or a source region) and an electrode is formed so as to be spread over all of the smaller regions in the non-trench region.Type: ApplicationFiled: November 24, 2003Publication date: September 16, 2004Inventors: Akio Sugi, Naoto Fujishima, Mutsumi Kitamura, Katsuya Tabuchi
-
Patent number: 6781197Abstract: A trench-type lateral power MOSFET is manufactured by forming an n−-type diffusion region, which will be a drift region, on a p−-type substrate; selectively removing a part of substrate and a part of n−-type diffusion region to form trenches; forming a gate oxide film of 0.05 &mgr;m in thickness in each trench; forming a polycrystalline silicon gate layer on gate oxide film; forming a p−-type base region and an n+-type diffusion region, which will be a source region, in the bottom of each trench; and forming an n+-type diffusion region, which will be a drain region, in the surface portion of n30 -type diffusion region. The MOSFET has reduced device pitch, a reduced on-resistance per unit area and a simplified manufacturing process.Type: GrantFiled: March 21, 2002Date of Patent: August 24, 2004Assignee: Fuji Electric Co., Ltd.Inventors: Naoto Fujishima, Akio Sugi, C. Andre T. Salama
-
Publication number: 20030164527Abstract: Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Therefore, the TLPM and the planar devices can be connected electrically to each other by resulting metal wiring layers and polysilicon layers without the need for performing wire bonding on a printed circuit board.Type: ApplicationFiled: December 31, 2002Publication date: September 4, 2003Applicant: Fuji Electric Co., Ltd.Inventors: Akio Sugi, Naoto Fujishima, Mutsumi Kitamura, Katsuya Tabuchi, Setsuko Wakimoto
-
Publication number: 20030132460Abstract: A semiconductor device is provided that can be manufactured by a simpler process than a conventional lateral trench power MOSFET for use with an 80V breakdown voltage, and which has a lower device pitch and lower on-state resistance per unit area than a conventional lateral power MOSFET for use with a lower breakdown voltage than 80V. A gate oxide film is formed thinly along the lateral surfaces of a trench at a uniform thickness. Then, a gate oxide film is formed along the bottom surface of the trench by selective oxidation so as to be thicker than the gate oxide film on the lateral surfaces of the trench and so as to become progressively thicker from the edge of the bottom surface of the trench toward drain polysilicon.Type: ApplicationFiled: December 18, 2002Publication date: July 17, 2003Applicant: Fuji Electric Co., Ltd.Inventors: Katsuya Tabuchi, Naoto Fujishima, Mutsumi Kitamura, Akio Sugi
-
Publication number: 20020158287Abstract: A trench-type lateral power MOSFET is manufactured by forming an n−-type diffusion region, which will be a drift region, on a p−-type substrate; selectively removing a part of substrate and a part of n−-type diffusion region to form trenches; forming a gate oxide film of 0.05 &mgr;m in thickness in each trench; forming a polycrystalline silicon gate layer on gate oxide film; forming a p−-type base region and an n+-type diffusion region, which will be a source region, in the bottom of each trench; and forming an n+-type diffusion region, which will be a drain region, in the surface portion of n−-type diffusion region.Type: ApplicationFiled: March 21, 2002Publication date: October 31, 2002Inventors: Naoto Fujishima, Akio Sugi, C. Andre T. Salama
-
Patent number: 6353934Abstract: A outerwear comprising of a front body cloth, a rear body cloth, right and left flank cloths having a predetermined width and right and left sleeve cloths, one edge of each right and left flank cloth is sewn to the front body cloth and the other edge of each right and left flank cloth is sewn to the rear body cloth such that each sewing line does not coincide with right and left flank lines, each of the right and left flank cloth is extended to the under-sleeve part sewn to the sleeve cloth; an elongation percentage of each of the front body cloth and the rear body cloth is set high in a horizontal direction thereof.Type: GrantFiled: December 16, 1999Date of Patent: March 12, 2002Assignee: Sumitomo Rubber Industries, Ltd.Inventors: Yoshio Tada, Akio Sugi, Satomi Fujita