Abstract: A Schottky barrier diode includes an n-type semiconductor layer including a gallium oxide-based semiconductor, an insulating film including SiO2 and covering a portion of an upper surface of the n-type semiconductor layer, and an anode electrode which is connected to the upper surface of the n-type semiconductor layer to form a Schottky junction with the n-type semiconductor layer and at least a portion of an edge of which is located on the insulating film. The insulating film further includes a first layer in contact with the n-type semiconductor layer and a second layer on the first layer. A refractive index of the first layer is lower than a refractive index of the second layer. The n-type semiconductor layer further includes a guard ring surrounding a junction with the anode electrode.

Abstract: A Schottky barrier diode includes an n-type semiconductor layer including a gallium oxide-based semiconductor, an insulating film including SiO2 and covering a portion of an upper surface of the n-type semiconductor layer, and an anode electrode which is connected to the upper surface of the n-type semiconductor layer to form a Schottky junction with the n-type semiconductor layer and at least a portion of an edge of which is located on the insulating film. The insulating film further includes a first layer in contact with the n-type semiconductor layer and a second layer on the first layer. A refractive index of the first layer is lower than a refractive index of the second layer.

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 ?m or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 ?m or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 ?m or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 ?m or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 ?m or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

Abstract: A multilayer structure with excellent crystallinity and a semiconductor device of the multilayer structure with good mobility are provided. A multilayer structure includes: a corundum structured crystal substrate; and a crystalline film containing a corundum structured crystalline oxide as a major component, the film formed directly on the substrate or with another layer therebetween, wherein the crystal substrate has an off angle from 0.2° to 12.0°, and the crystalline oxide contains one or more metals selected from indium, aluminum, and gallium.

Abstract: A multilayer structure with excellent crystallinity and a semiconductor device of the multilayer structure with good mobility are provided. A multilayer structure includes: a corundum structured crystal substrate; and a crystalline film containing a corundum structured crystalline oxide as a major component, the film formed directly on the substrate or with another layer therebetween, wherein the crystal substrate has an off angle from 0.2° to 12.0°, and the crystalline oxide contains one or more metals selected from indium, aluminum, and gallium.

Abstract: A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 ?m or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

Abstract: Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.

Abstract: Provided is a crystalline multilayer structure which has good electrical properties and is useful for semiconductor devices. A crystalline multilayer structure includes a base substrate and a crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween and including a corundum-structured oxide semiconductor as a major component. The oxide semiconductor contains indium and/or gallium as a major component. The crystalline oxide semiconductor thin film contains germanium, silicon, titanium, zirconium, vanadium, or niobium.

Abstract: Provided is a crystalline multilayer structure which has good electrical properties and is useful for semiconductor devices. A crystalline multilayer structure includes a base substrate and a crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween and including a corundum-structured oxide semiconductor as a major component. The oxide semiconductor contains indium and/or gallium as a major component. The crystalline oxide semiconductor thin film contains germanium, silicon, titanium, zirconium, vanadium, or niobium.

Abstract: Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.

Abstract: A head-gimbal assembly. The head-gimbal assembly includes a suspension, a microactuator disposed on the suspension, and a head-slider bonded to the microactuator. The head-gimbal assembly further includes a connection pad disposed on the suspension, a connection pad disposed on the microactuator and formed over an edge between a side surface and a top surface of the microactuator to have a bend portion with an obtuse angle, and a metallic interconnection joint for interconnecting the connection pad of the suspension with the connection pad of the microactuator.

Abstract: A head-gimbal assembly. The head-gimbal assembly includes a suspension, a microactuator disposed on the suspension, and a head-slider bonded to the microactuator. The head-gimbal assembly further includes a connection pad disposed on the suspension, a connection pad disposed on the microactuator and formed over an edge between a side surface and a top surface of the microactuator to have a bend portion with an obtuse angle, and a metallic interconnection joint for interconnecting the connection pad of the suspension with the connection pad of the microactuator.

Abstract: A disk drive configured with micro-actuator interconnect conditioning. The disk drive includes a disk, a head, an actuator, a piezoelectric element, a hardened conductive adhesive, a voltage-supply circuit, and a controller. The head is configured to access the disk. The actuator includes a suspension supporting the head, and an arm supporting the suspension. The piezoelectric element is disposed on the suspension, is electrically connected to a first drive line and a second drive line, and is configured to change the position of the head. The hardened conductive adhesive is electrically connected to at least one connecting part of the piezoelectric element and the first drive line. The voltage-supply circuit is configured to supply a voltage to the piezoelectric element. The controller is configured to control a voltage-control circuit each time a designated process is executed, and to apply a voltage to the piezoelectric element with a prescribed maximum absolute value.

Abstract: A magnetic disk apparatus includes a dual head equipped with an MR head for reading data and an inductive head for writing the data. One ID portion and one servo pattern are disposed in one sector and an unequal track pitch is formed. The ID portion is formed at the center of a radius of two positions to which the MR head is positioned at the time of reading the data and writing the data, respectively.

Abstract: A rotor magnet is attached to the inner peripheral portion of a hub to attach a magnetic disk or the like and a stator is provided in the outer peripheral portion of a bearing housing so as to face the rotor magnet, thereby forming a rotating mechanism. A magnetic pre-load mechanism is provided and a spindle is pressed to one side of a radial bearing, thereby stabilizing the rotation.

Abstract: A magnetic disk unit comprising a one-piece carriage structure having a small thermal off-tracking amount, with the carriage structure including a rotary shaft; guide arms integrally supported on a guide-arm retainer at their proximal ends and extending independently and parallely; bearing retainers formed on both ends of the guide-arm retainer; and bearings fixed on the bearing retainers rotatably connecting the guide-arm retainer to the rotary shaft. A center line in a direction of thickness of the outermost guide arm is located outside of that of the bearing in a direction of height thereof, and a concave portion is continuously formed on the bearing retainer. Thermal coefficients of expansion of the guide arms and the guide-arm retainer are substantially equal, with the carriage structure being fashioned of an alloy mainly containing Al and Si, eutectic crystal Si particles in the guide arm and/or the guide-arm retainer. The average value of the longest eutectic crystal Si particles therein is 1.6 .mu.