Abstract: A semiconductor device in which fatigue failure of a solder layer underneath a semiconductor chip mounted on a base can be prevented from occurring due to repetitions of turn-on and -off of power during operation thereof, is provided, that is, a recess is formed in the base in a part underneath the semiconductor chip so as to prevent occurrence of thermal expansion in the base.

Abstract: The object of this invention is to provide a heated type air flow rate sensor for measuring an air flow rate using heat generating resistive element or resistor formed within a diaphragm of which periphery is fixed, in which diaphragm destruction due to the collusion of dust is adapted to be prevented.

Abstract: A wire bonding method and apparatus implement the flatly thinner plastic deformation for the joint section of a wire, which has a diameter ranging 100-600 &mgr;m, on its feed side, feed out and position the flatly deformed wire joint section to a target joint surface, and join the wire to it by pressing the positioned wire joint section, with vibration being applied, onto the joint surface with a ultrasonic wire bonder. A high-power semiconductor device fabricated based on this scheme has a long life of wire joints.

Abstract: A heat sink or cooling case has a cooling channel and at least one opening formed to face part of the channel. A first seal is provided outside the at least one opening. A cooling case has a groove located outside the first seal. Holes are discretely formed in the groove and leads from the groove to an exterior of the cooling case. A second seal is provided outside the groove. A radiating plate constituting a circuit case is mounted on the heat sink by using a clamping device inn or outside the second seal.

Abstract: A wire bonding method and apparatus implement the flatly thinner plastic deformation for the joint section of a wire, which has a diameter ranging 100-600 &mgr;m, on its feed side, feed out and position the flatly deformed wire joint section to a target joint surface, and join the wire to it by pressing the positioned wire joint section, with vibration being applied, onto the joint surface with a ultrasonic wire bonder. A high-power semiconductor device fabricated based on this scheme has a long life of wire joints.

Abstract: A resin sealed semiconductor device is provided with an organic resin wiring substrate, an LSI chip having a semiconductor integrated circuit and mounted in a bare chip package form to the organic resin wiring substrate through a plurality of electrical bonding members, and a resin charged into a gap portion between the organic resin wiring substrate and the LSI chip. In this resin sealed semiconductor device, a modulus of longitudinal elasticity of the resin to be charged, its coefficient of linear thermal expansion and its fillet shape are optimized. The resin charged is also preferably colored in black to minimize adverse effects of visible rags on the LSI chip.

Abstract: In a capacitance type pressure sensor, a diaphragm is formed of a fragile material using an impurity-diffused monocrystal silicon and constitutes a stable pressure-responsive structure which does not undergo a plastic deformation. Between the diaphragm and a movable electrode is formed an oxide film to diminish stray capacitance between the movable electrode and a substrate and also between the movable electrode and a impurity-diffused layer. The oxide film and the movable electrode are each divided into plural regions so that the divided regions of the movable electrode are formed on the divided regions of the oxide film, thereby diminishing stress strain induced by a difference in therm expansion coefficient among the diaphragm, oxide film and movable electrode.

Abstract: IGBT modules, bus bars and capacitors in an inverter main circuit are secured on the front face of a heat sink and at the back side of the heat sink a water cooling channel is formed to cool the IGBT modules. The bus bars and the capacitor, thereby the size of an inverter device used in an electric car is reduced and the duration thereof is prolonged.

Abstract: A cylinder pressure sensor is adapted to detect a cylinder pressure by detecting a change in the amount of light being transmitted through an optical fiber in an axial direction. Two support portions support the optical fiber at two points along the length thereof. A diaphragm in contact with the optical fiber causes bending of the optical fiber in dependence upon a change in the cylinder pressure. The position at which a force is applied against the optical fiber by the diaphragm is deviated from a center position between the two support portions. The resulting cylinder pressure sensor is capable of accurately measuring cylinder pressure and knocking over a long period of time with a low cost and reduced initial variations.

Abstract: A semiconductor device, suitable for use in an invertor device for large currents in which IGBT chips are used and of which a high reliability is required, has an insulating plate on which are mounted semiconductor chips, a resin case enclosing the semiconductor chips, a filler resin filled into the resin case and covering the semiconductor chips and filling in the space between the semiconductor chips and the resin case, and a heatsink to which the insulating plate is attached, wherein, for purposes of attaching the insulating plate to the heatsink, the resin case is used to press the insulating plate onto the heatsink. Some benefits of this construction are that is makes it possible to eliminate the problem of fatigue failure of a solder layer previously used for attaching the insulating plate to the heatsink by dispensing with that solder layer, while at the same time improving the transfer of heat from the insulating plate to the heatsink, and thereby improving the removal of heat from the device.

Abstract: An electronic device is formed by connecting a wiring plate and insulating plates mounting semiconductor chips to a base. A composite material plate, which is made by combining materials having different linear thermal expansion coefficients, is inserted between the base and the insulating plates through solders. The thickness ratio (h.sub.a /h.sub.b) of the materials of the composite material plate is selected in such a manner that strain in the solder between the base and the composite material plate is equal to the strain in the solder between the insulating plate and the composite material plate. In accordance with one embodiment of the invention, a single insulating plate is provided for mounting a plurality of semiconductor chips.

Abstract: A cover for a damping roller of an offset press is comprising a tubular knitted fabric having two water-shrinkable ground yarns and the hydrophilic pile yarns. The ground yarns are intertwined and respectively form a tubular plain weft-knitted structure in which two ground yarns are alternately knitted so that wales formed by one ground yarn are interposed between two adjacent wales formed by the other ground yarn so that all the wales appear on the face of the fabric. The courses of each plain knitted structure include long sinker loops, the ground yarns being knitted into the respective plain-knitted ground fabric structure to form raised loops. The cover has high shrinking percentages both in radial and axial directions.

Abstract: An electric component part has its lead terminals bent in thickness directions in a middle section thereof at least two positions so that a step section virtually in parallel to the bottom of a circuit substrate is formed with the intention of absorbing the external force applied to the part by chaging the shape of the lead terminals. Increase in the part layout area due to the formation of the horizontal step section can be avoided, when necessary, by shifting the terminal lead out position on the component part inward thereby to minimize the jetty dimensions.

Abstract: An antistatic cover is composed of a tubular knitted fabric comprising water-shrinkable or heat-shrinkable ground yarns which are alternately knitted to form a needle loop in a course of a ground fabric so that each sinker loop of the ground fabric has a width longer than that of the needle loop, at least one of the ground yarns comprising charge control fibers or electrically conductive fibers. Pile yarns may be worked into each course of the ground fabric by alternately knitting together with a needle mesh of the ground fabric to form a needle loop. At least one of the ground yarns and pile yarns comprises charge control fibers or conductive fibers.

Abstract: A ceramic multilayer wiring board is provided in which ceramic insulating layers and wiring patterns provided thereon are connected by conductors filling through-holes formed in the ceramic insulating layers. The through-holes are so formed that the superficial portions of each through-hole of the ceramic multilayer wiring board is smaller in diameter than the inside portion of the through-hole between the superficial portion. This can prevent the board from being cracked around the through-holes.

Abstract: A strain gauge is formed on one main surface of a semiconductor single crystal substrate while an insulating oxide film is formed on the other main surface of the substrate. A metal junction layer including several layers inclusive of eutectic alloy layers is formed on the surface of the insulating oxide film and the thus prepared structure is mounted on a metal strain generator. By heating this assembly to temperatures approximating to the eutectic point of the eutectic alloy layer, the semiconductor substrate and the metal strain generator are joined together.

Abstract: A semiconductor substrate has a major surface, another major surface on the opposite side of the first major surface, a strain gauge stripe formed in the central portion of the second major surface by diffusing an impurity therein, and electrodes connected to the strain gauge stripes. These strain gauge stripes are spaced from the peripheral edge of the second major surface by a distance greater than 1/3 of the length of the same major surface. The first major surface of the semiconductor substrate is bonded to an elastic metal load plate.

Abstract: The radial vanes secured to the inside of a cylindrical anode electrode are short-circuited by inner and outer strap rings which are secured to alternate vanes. The intermediate portions of the strap rings between the points at which the strap rings are secured to the vanes are projected outwardly.