Abstract: An electromechanical element includes a mechanically movable element through a hollow formed on a substrate, and a plurality of holes formed in the movable element. In the electromechanical element, the plurality of holes are arranged such that at least two holes are in a same line, at least one hole is in another line located adjacent to the one line with at least two holes, and a distance between one of the holes arranged in the same line and the other hole located at the closest position from the one of the two holes arranged in the same line is longer than a distance between the holes adjacently arranged in the same line.

Abstract: A fixed voltage and a movable electrode are placed face to face with each other, and an insulating film is formed on the surface of the fixed electrode. The insulating film is made of a nitride film (SiN) as a main material, with oxide films (SiO2) being formed on the front and rear surfaces of the nitride film. Moreover, a plurality of protrusions are formed on an area facing the movable electrode of the upper face of the insulating film. The charge quantity in the insulating film is mainly determined by a film thickness of the oxide film, and the nitride film is used for maintaining a sufficient film thickness required for the voltage proof characteristic.

Abstract: The present invention provides a semiconductor composite device including a semiconductor device formed on or in a substrate, an insulating film formed on the substrate so as to cover the semiconductor device, a micro electro mechanical portion formed on the insulating film, and a wiring layer connected to the semiconductor device and the micro electro mechanical portion.

Abstract: A fixed voltage and a movable electrode are placed face to face with each other, and an insulating film is formed on the surface of the fixed electrode. The insulating film is made of a nitride film (SiN) as a main material, with oxide films (SiO2) being formed on the front and rear surfaces of the nitride film. Moreover, a plurality of protrusions are formed on an area facing the movable electrode of the upper face of the insulating film. The charge quantity in the insulating film is mainly determined by a film thickness of the oxide film, and the nitride film is used for maintaining a sufficient film thickness required for the voltage proof characteristic.