Abstract: A mask-integrated surface protective tape, which has at least a substrate film and a mask material layer, wherein the mask material layer is provided directly on the substrate film, or is provided on the substrate film through a temporary-adhesive layer, and wherein a parallel ray transmittance of the mask material layer at a wavelength region of 355 nm is 30% or less; and a method of producing a semiconductor chip.

Abstract: A mask material for plasma dicing, which is used in a plasma step, whose surface roughness Rz at the surface side that does not touch with an adherend is from 0.1 ?m to 1.5 ?m; a mask-integrated surface protective tape; and a method of producing a semiconductor chip.

Abstract: After grinding is performed on a semiconductor wafer, the semiconductor wafer is fixed on the electrostatic chuck so as to cause the front surface side of the semiconductor wafer to face the electrostatic chuck. Next, a masking material layer is formed on the rear surface of the ground semiconductor wafer in a state where a surface protection tape is bonded thereto. Then, a masking tape is cut by irradiating, from the rear surface side, portions thereof corresponding to a plurality of streets appropriately formed in a grid shape in a pattern surface with a laser beam so as to form openings for the streets in the semiconductor wafer. Then, SF6 plasma irradiation is performed from the rear surface side so as to etch the semiconductor wafer that has been exposed in the street portions. Finally, ashing is performed using O2 plasma.

Abstract: A surface side is irradiated with an SF6 gas plasma to etch a semiconductor wafer which has been peeled off in street portions, and divide the semiconductor wafer into a plurality of individual semiconductor chips. A removing agent is subsequently supplied from the surface side. At that time, it is preferable that the semiconductor wafer divided into the plurality of chips is rotated at high speed. Accordingly, a mask material layer remaining on the surface is removed by the removing agent. Moreover, the removing agent is preferably an organic solvent, and more preferably, methyl ethyl ketone, ethanol, and ethyl acetate, or a combination of these.

Abstract: After grinding is performed on a semiconductor wafer, the semiconductor wafer is fixed on the electrostatic chuck so as to cause the front surface side of the semiconductor wafer to face the electrostatic chuck. Next, a masking material layer is formed on the rear surface of the ground semiconductor wafer in a state where a surface protection tape is bonded thereto. Then, a masking tape is cut by irradiating, from the rear surface side, portions thereof corresponding to a plurality of streets appropriately formed in a grid shape in a pattern surface with a laser beam so as to form openings for the streets in the semiconductor wafer. Then, SF6 plasma irradiation is performed from the rear surface side so as to etch the semiconductor wafer that has been exposed in the street portions. Finally, ashing is performed using O2 plasma.

Abstract: A mask-integrated surface protective tape, which has at least a substrate film and a mask material layer, wherein the mask material layer is provided directly on the substrate film, or is provided on the substrate film through a temporary-adhesive layer, and wherein a parallel ray transmittance of the mask material layer at a wavelength region of 355 nm is 30% or less; and a method of producing a semiconductor chip.

Abstract: A surface side is irradiated with an SF6 gas plasma to etch a semiconductor wafer which has been peeled off in street portions, and divide the semiconductor wafer into a plurality of individual semiconductor chips. A removing agent is subsequently supplied from the surface side. At that time, it is preferable that the semiconductor wafer divided into the plurality of chips is rotated at high speed. Accordingly, a mask material layer remaining on the surface is removed by the removing agent. Moreover, the removing agent is preferably an organic solvent, and more preferably, methyl ethyl ketone, ethanol, and ethyl acetate, or a combination of these.

Abstract: A mask material for plasma dicing, which is used in a plasma step, whose surface roughness Rz at the surface side that does not touch with an adherend is from 0.1 ?m to 1.5 ?m; a mask-integrated surface protective tape; and a method of producing a semiconductor chip.

Abstract: A portable case for belongings comprises a case body of leather and a cover lid of metal to protect the belongings within the case body. The case body and protective cover lid are hinged together and are disengageable from each other at the hinge so that both case body itself and the cover lid can be replaced with new ones. The case can be used as a carrier for a cigarette lighter or a portable telephone, as a waist bag for miscellaneous articles, as a hand or shoulder bag, as a rucksack, as one of a pair of panniers, and as a tool carrier for a two-wheeled vehicle. A protective cloth bag may be provided on the cover lid, and the cover lid may also be provided with an external key carrier.