Abstract: A semiconductor device has on a semiconductor layer: a gate insulating film formed, extending from a second emitter region toward a buffer region beyond a first body region, and covering part of a drift region; and a gate electrode. The second emitter region contacts a first emitter region, and extends laterally to a portion under the gate electrode so as to be longer than a diffusion depth of the second emitter region and not beyond a lateral length of the first body region under the gate electrode, in an area from an end portion of the first emitter region closer to the gate electrode to a region under the gate electrode.

Abstract: A semiconductor device has on a semiconductor layer: a gate insulating film formed, extending from a second emitter region toward a buffer region beyond a first body region, and covering part of a drift region; and a gate electrode. The second emitter region contacts a first emitter region, and extends laterally to a portion under the gate electrode so as to be longer than a diffusion depth of the second emitter region and not beyond a lateral length of the first body region under the gate electrode, in an area from an end portion of the first emitter region closer to the gate electrode to a region under the gate electrode.

Abstract: In this invention, the semiconductor device is provided with a gate electrode formed on a gate insulating film in a region sectioned by an element isolation formed on a semiconductor layer of the first conduction type, and a source region and a drain region of the second conduction type. At least one of the source region and the drain region has a first low concentration region and a high concentration region. Also, the semiconductor device of the present invention is provided with a second low concentration region of the second conduction type between a channel stopper region formed below the element isolation and the source region, and between the channel stopper region and the drain region. The semiconductor layer immediately below the gate electrode projects to the channel stopper region side along the gate electrode, and the semiconductor layer and the channel stopper region make contact with each other.

Abstract: In this invention, the semiconductor device is provided with a gate electrode formed on a gate insulating film in a region sectioned by an element isolation formed on a semiconductor layer of the first conduction type, and a source region and a drain region of the second conduction type. At least one of the source region and the drain region has a first low concentration region and a high concentration region. Also, the semiconductor device of the present invention is provided with a second low concentration region of the second conduction type between a channel stopper region formed below the element isolation and the source region, and between the channel stopper region and the drain region. The semiconductor layer immediately below the gate electrode projects to the channel stopper region side along the gate electrode, and the semiconductor layer and the channel stopper region make contact with each other.

Abstract: In this invention, the semiconductor device is provided with a gate electrode formed on a gate insulating film in a region sectioned by an element isolation formed on a semiconductor layer of the first conduction type, and a source region and a drain region of the second conduction type. At least one of the source region and the drain region has a first low concentration region and a high concentration region. Also, the semiconductor device of the present invention is provided with a second low concentration region of the second conduction type between a channel stopper region formed below the element isolation and the source region, and between the channel stopper region and the drain region. The semiconductor layer immediately below the gate electrode projects to the channel stopper region side along the gate electrode, and the semiconductor layer and the channel stopper region make contact with each other.

Abstract: The present invention provides a semiconductor device including a plurality of wirings or conductive film patterns formed on a semiconductor substrate, and clearances are provided between the wirings or the conductive film patterns. On a corner or an end part of at least one of the wirings or the conductive film patterns, protrusions are formed to protrude, facing the clearances between the wirings or the conductive film patterns. Thereby, defects will not occur in the insulating protective film after an etching step for forming an aperture for exposing a bonding pad, and thus, a semiconductor device is manufactured without being subjected to an additional process that raises the manufacturing cost. The present invention provides also a method of manufacturing the semiconductor device.

Abstract: The present invention provides a semiconductor device including a plurality of wirings or conductive film patterns formed on a semiconductor substrate, and clearances are provided between the wirings or the conductive film patterns. On a corner or an end part of at least one of the wirings or the conductive film patterns, protrusions are formed to protrude, facing the clearances between the wirings or the conductive film patterns. Thereby, defects will not occur in the insulating protective film after an etching step for forming an aperture for exposing a bonding pad, and thus, a semiconductor device is manufactured without being subjected to an additional process that raises the manufacturing cost. The present invention provides also a method of manufacturing the semiconductor device.

Abstract: In this image recording apparatus, imaging sensor obtains two video signals of different signal charge accumulation periods, in a given signal charge accumulation period which is represented by a field or a frame of a video signal, and the two video signals are recorded on a record medium, whereby a video signal of an object having a wide luminance distribution can be recorded, and as for the image reproducing apparatus, a correcting circuit corrects standard-illuminance video information and high-illuminance video information which are reproduced by a reproducing circuit, the user designates an object illuminance range to be output, through an object illuminance range designating circuit, and a level converter converts the luminance into a luminance level which can be output by a display apparatus or a printer, thereby allowing portions which are largely different in object illuminance, to be selectively displayed or output in reproduction.

Abstract: A video information adjusting apparatus includes illuminance information acquiring part 511 for separately acquiring image information corresponding at least to two different kinds of illuminance ranges,from an identical shot on the basis of a prescribed imaging condition, transmitting part 504 for separately transmitting out the image information corresponding at least to the two kinds of illuminance ranges, and for receiving other image information corresponding at least to two different kinds of illuminance ranges-from outside, and illuminance information adjusting part 512 for generating brightness-adjusted image information on the basis of a prescribed illuminance range and by using all or part of the other image information corresponding at least to the two kinds of illuminance ranges. According to the video information adjusting apparatus, the image information which is transmitted out can be adjusted at each receiving side.

Abstract: In this image recording apparatus, imaging sensor obtains two video signals of different signal charge accumulation periods, in a given signal charge accumulation period which is represented by a field or a frame of a video signal, and the two video signals are recorded on a record medium, whereby a video signal of an object having a wide luminance distribution can be recorded,and as for the image reproducing apparatus, a correcting circuit corrects standard-illuminance video information and high-illuminance video information which are reproduced by a reproducing circuit, the user designates an object illuminance range to be output, through an object illuminance range designating circuit, and a level converter converts the luminance into a luminance level which can be output by a display apparatus or a printer, thereby allowing portions which are largely different in object illuminance, to be selectively displayed or output in reproduction.

Abstract: A solid state imaging device has: a first polysilicon layer 901; a second polysilicon layer 902; a photoelectric converting portion or PD 903; a read gate 904; a read channel 905 (in this case, an N-layer) which is formed in a semiconductor below the read gate; a P-layer 906 which prevents a signal charge from erroneously entering a VCCD of a unit pixel adjacent in a horizontal direction; a P-layer 907 which defines the transfer channel region of a VCCD; and a VCCD 908 which transfers a signal charge in the direction of the arrows. A unit pixel 900 is indicated by a one-dot chain line. The two-dimensionally arrayed solid state imaging device is driven by driving pulses of eight phases in total, namely, a driving pulse &phgr;V1 911, a driving pulse &phgr;V2 912, a driving pulse &phgr;V3 913, a driving pulse &phgr;V4 914, a driving pulse &phgr;V5 915, a driving pulse &phgr;V6 916, a driving pulse &phgr;V7 917, and a driving pulse &phgr;V8 918.

Abstract: A method of treating a material by generating an ultraviolet wavelength laser beam having femtosecond pulses; splitting the ultraviolet wavelength laser beam into a plurality of separate laser beams having femtosecond pulses; directing the separate laser beams onto a target point within a sample such that the femtosecond pulses of the separate beams overlap to create an intensity sufficient to treat the sample. Apparatus for treating a material that includes an ultraviolet laser for generating an ultraviolet wavelength laser beam having femtosecond pulse and directing that ultraviolet wavelength laser beam onto a beam splitter; a beam splitter for splitting the ultraviolet wave length laser beam into a plurality of separate laser beams having femtosecond pulses; directing the separate laser beams onto a target point within a sample such that the femtosecond pulses of the separate beams overlap to create an intensity sufficient to treat the sample.

Abstract: To present a holonic rhythm generator capable of generating rhythm following free changes by transmitting the intent of tempo change from the action of man to rhythm generator in real time, or, to the contrary, guiding the action rhythm of man gradually by the rhythm generator. To achieve the object, the device has a rhythm generator having such constitution described by a nonlinear vibration equation which is a van der Pol's formula a constant portion of which is replaced by a cubic expression, and a fixed rhythm generator and action rhythm detector for generating an input signal of the rhythm generator, in which a specific relation is given between the fixed rhythm generator and action rhythm detector.

Abstract: Apparatus and method for the precision treatment of a material using a semiconductor diode for generating a plurality of laser light beams, optical fibers coupled to the diode for transmitting and combining the light beams, and a scanner for scanning the combined light beams onto the material to be treated. Also, channels micromachined onto a fixture are provided for supporting the fibers in optimum alignment with the diode. Also provided are a camera and a thermal image capturing system for generating optical and thermal images of the material. An image processing unit is provided for receiving and processing the image to generate and transmit control signals to a diode controller to control intensity and timing of the light beams, and to a controller of the scanner to control positioning of the scanner to deflect the laser beam over the material as desired.

Abstract: An ultrasonic transducer for medical diagnostic examinations which comprises a transducer element having one surface through ultrasonic waves are emitted, an acoustic impedance matcher, and a contact member brought to contact with an object being examined and formed on the one surface of the ultrasonic transducer element. The contact member includes at least a flat plate or an acoustic lens made of a-4-methylpentene-1-base polymer which has high mechanical strength. Transducer arrays and assemblies using such polymer as a member directly contacted with human body are also described.

Abstract: A piping system surveillance apparatus has a CRT for displaying a graphic pattern of a piping system. Detectors are arranged in active construction members such as a valves, and pumps of the piping system so as to directly detect the presence/absence of fluid flow in the active construction members in accordance with operating conditions thereof. The presence/absence information of the fluid flow in non-active construction members is obtained by a CPU in accordance with logic operation of detection signals from the detectors. Data indicating the presence/absence of the fluid flow is compared with data indicating the presence/absence of the fluid flow in the construction members of the piping system in normal operation and is discriminated to be normal/abnormal. This discrimination result and the data indicating the presence/absence of actual fluid flows are displayed by the corresponding display elements of the graphic pattern on the CRT.

Abstract: Ultrasonic echo signals are detected in phase and integrated with a period corresponding to an ultrasonic pulse. The integrated values are sampled and the difference between two integrated values is successively frequency-analyzed.

Abstract: An ultrasonic imaging system comprises a transducer array including a plurality of elongated piezoelectric transducers successively arranged along a curved surface for emission of diverging beams of acoustic energy and an acoustic diverging lens affixed to the curved surface for increasing the angle of divergence of the emitted acoustic energy. The system includes a source for successively generating burst energy and means for selectively establishing a connection from the energy source to a subarray of the transducers to transmit a beam of acoustic energy therefrom and shifting the connection to the next subarray by at least one transducer in response to the generation of subsequent acoustic energy to cause the emitted acoustic energy to be angulated in an arc scan format. Means are provided for compensating for differences in energy level resulting from the differences in the path-length of the acoustic lens.

Abstract: An ultrasonic transducer array for arc scan imaging systems comprises a plurality of elongated piezoelectric transducers arranged successively to define a convexed energy radiating surface. A plano-concave acoustic diverging lens is attached to the convexed surface to diverge the acoustic energy transmitted from the transducers in an increased steering angle. The transducers are assembled on an impedance matching layer which defines the convexed radiating surface. The acoustic impedance of the diverging lens is substantially equal to the acoustic impedance of the human body, while the acoustic impedance of the impedance matching layer is greater than that of the human body.

Abstract: Ultrasonic echo signals are successively sampled and converted to digital echo data which are written into a first digital memory column by column and then read out row by row into a first buffer memory. The digital echo data which are derived in response to beams successively transmitted in a predetermined direction are written into columns of a second digital memory and read out of the memory in rows into a second buffer memory. The data stored in the first and second buffer memories are read out for digital-to-analog conversion and selectively applied within a television "frame" interval to control electron beam intensity of a single cathode ray tube so as to present tomographic and cardiographic images in different display areas of the tube.