Abstract: Provided is an ion implantation method of transporting ions generated by an ion source to a wafer and implanting the ions into the wafer by irradiating an ion beam on the wafer, including, during the ion implantation into the wafer, using a plurality of detection units which can detect an event having a possibility of discharge and determining a state of the ion beam based on existence of detected event having a possibility of discharge and a degree of influence of the event on the ion beam.

Abstract: Provided is an ion implantation method of transporting ions generated by an ion source to a wafer and implanting the ions into the wafer by irradiating an ion beam on the wafer, including, during the ion implantation into the wafer, using a plurality of detection units which can detect an event having a possibility of discharge and determining a state of the ion beam based on existence of detected event having a possibility of discharge and a degree of influence of the event on the ion beam.

Abstract: A method and apparatus for controlling the die-retaining force of an extruder is disclosed. In the operation of an extruder adapted to retain a die with a container actuated by a container cylinder and effect extrusion of a billet readied for use in the container by forcing the billet through the die, to keep the die-retaining force of the extruder constant, the control of the die-retaining force of the extruder is carried out by causing the container cylinder to impart to the container a force directed away from the die so as to be sequentially decreased during the first half period of the extrusion and causing the container cylinder to impart to the container a force directed toward the die so as to be sequentially increased during the last half period of the extrusion.