Abstract: An integrated circuit is formed that contains a ferroelectric element comprising metal oxide material containing at least two metals. Various methods and structures are applied to minimize the degradation of ferroelectric properties caused by hydrogen during fabrication of the circuit. Oxygen is added to the some elements of the integrated circuit to serve as a getter of hydrogen during fabrication steps. To minimize hydrogen degradation, the ferroelectric compound can be fabricated from a liquid precursor containing one or more of the constituent metals in excess of the amount corresponding to a stoichiometrically balanced concentration. A hydrogen barrier layer, preferably comprising titanium nitride, is formed to cover the top of the ferroelectric element. A hydrogen heat treatment in hydrogen gas is performed on the integrated circuit at a temperature from 200.degree. to 350.degree. C.

Abstract: In a slant plane light emission type semiconductor laser whose laser structure can be formed on a stepped substrate by a series of MOCVD growth processes, the width of the active layer at the slant portion is set to 2.5 .mu.m or less or the angle between the flat portion and slant portion is set to 12 degrees or less. The semiconductor laser having such a structure can emit light having a single peak at the near field.

Abstract: In a slant plane light emission type semiconductor laser whose laser structure can be formed on a stepped substrate by a series of MOCVD growth processes, the width of the active layer at the slant portion is set to 2.5 .mu.m or less or the angle between the flat portion and slant portion is set to 12 degrees or less. The semiconductor laser having such a structure can emit light having a single peak at the near field.

Abstract: A method for fabricating a laser diode, comprises the steps of: forming a first stripe structure defined by a plurality of crystallographically distinct surfaces on a surface of a semiconductor substrate; forming an epitaxial layer of InGaAlP on the semiconductor substrate including the first stripe structure by a decomposition of gaseous source materials of In, Ga, Al and P; wherein the InGaAlP layer is doped to the p-type by incorporating Mg while growing the InGaAlP by adding a gaseous source material of Mg into said source materials of In, Ga, Al and P such that the InGaAlP layer is doped to the p-type with a substantially uniform carrier concentration level irrespective of the crystal surfaces forming the stripe structure.

Abstract: The semiconductor laser of the present invention has an active layer in which the output edge is formed into a V-shape or comprises a striped active layer which is present in a pumped region and whose light output edge is transversely bent.

Abstract: A method for fabricating a laser diode, comprises the steps of: forming a first stripe structure defined by a plurality of crystallographically distinct surfaces on a surface of a semiconductor substrate; forming an epitaxial layer of InGaAlP on the semiconductor substrate including the first stripe structure by a decomposition of gaseous source materials of In, Ga, Al and P; wherein the InGaAlP layer is doped to the p-type by incorporating Mg while growing the InGaAlP by adding a gaseous source material of Mg into said source materials of In, Ga, Al and P such that the InGaAlP layer is doped to the p-type with a substantially uniform carrier concentration level irrespective of the crystal surfaces forming the stripe structure.

Abstract: A semiconductor laser includes a substrate having a (100) face as its main surface, where the substrate has a stripe of a first mesa extending in a <110> direction of the substrate and including a (111)B face as its sloping surface, a buried layer formed on the substrate excluding a top surface of the stripe of the first mesa so that the (111)B face of the stripe of the first mesa is covered a sloping surface part of the buried layer, where the top surface of the stripe of the first mesa is the (100) face of the substrate and forms a stripe of a second mesa together with the sloping surface of the buried layer and the stripe of the second mesa has a smaller inclination than the stripe of the first mesa, and a double heterostructure made up of a plurality of semiconductor layers and formed on the stripe of the second mesa. The double heterostructure has a substantially trapezoidal cross section which is determined by the stripe of the second mesa.

Abstract: Disclosed is a process for expressing a gene and producing a metabolic product formed by the gene by culturing a transformant microorganism carrying a recombinant DNA constructed of a DNA fragment having at least one gene to be expressed and a vector DNA, at least one of which is foreign to the host microorganism.

Abstract: A semiconductor laser includes a substrate having a (100) face as its main surface, where the substrate has a stripe of a first mesa extending in a <110> direction of the substrate and including a (111)B face as its sloping surface, a buried layer formed on the substrate excluding a top surface of the stripe of the first mesa so that the (111)B face of the stripe of the first mesa is covered a sloping surface part of the buried layer, where the top surface of the stripe of the first mesa is the (100) face of the substrate and forms a stripe of a second mesa together with the sloping surface of the buried layer and the stripe of the second mesa has a smaller inclination than the stripe of the first mesa, and a double heterostructure made up of a plurality of semiconductor layers and formed on the stripe of the second mesa. The double heterostructure has a substantially trapezoidal cross section which is determined by the stripe of the second mesa.

Abstract: A combustion chamber of an engine has a fuel injector provided for injecting fuel directly in the combustion chamber. An arc-shaped offset cavity is formed in a roof of the combustion chamber, and a fuel injector is located at a top of the cavity on the axis of the cylinder of the engine. A spark plug is located on the axis so as to ignite the fuel injected from the injector and passing the gap of the spark plug.

Abstract: A platen roller producing process includes the steps of coating the circumferential wall of a core metal with a rubber material, inserting the core metal coated with the rubber material into a cylindrical mold and subjecting the mold to a heating treatment.

Abstract: Disclosed are recombinant plasmid vectors constructed of a plasmid autonomously replicable in cells of microorganisms belonging to the genus Corynebacterium or Brevibacterium and a DNA fragment containing a gene expressible by said microorganisms. The recombinant vector plasmids are autonomously replicable in glutamic acid--producing microorganisms and are useful to clone desired DNA fragments in such microorganisms.

Abstract: Disclosed is a method for transformation of microorganisms belonging to the genera Corynebacterium and Brevibacterium whereby a foreign DNA may be introduced into a host cell and autonomously replicated.

Abstract: A novel lysozyme-sensitive microorganism belonging to the genus Corynebacterium or Brevibacterium and having a sensitivity to lysozyme at a concentration of less than 25 .mu.g/ml is provided from selected mutants. This novel microorganism is especially suitable for use in recombinant DNA technology.

Abstract: Disclosed is a novel vector, plasmid pCG1, and a process of producing plasmid pCG1 from Corynebacterium glutamicum.

Abstract: Disclosed are novel plasmids which can replicate autonomously in microorganisms belonging to the genus Corynebacterium or Brevibacterium and which carry a gene for resistance to streptomycin and/or spectinomycin. The plasmids are useful as a cloning vector.

Abstract: Disclosed is a novel vector, plasmid pCG2, and a process of producing plasmid pCG2 from Corynebacterium glutamicum.