Abstract: A space temperature scanner capable of measuring a temperature distribution in a space without requiring troublesome device installation work or complex data processing is disclosed. The space temperature scanner (scanner 100) of the present invention includes a bar-shaped portable support member 110, attachment units 120 arranged along a straight line on the support member 110, and thermocouple units 130 that can be removably attached to the attachment units 120. The thermocouple units 130 can be selectively attached to some or all of the attachment units 120 when temperature measurement is to be performed.

Abstract: A method for forming a CdTe film of good quality by an improved close-spaced sublimation process is disclosed. This method comprises: a step of applying a paste which contains material for CdTe semiconductor on a supporting member, thereby to form a coating film which contains the material for the semiconductor on the surface of the supporting member; a step of closely arranging the supporting member and a substrate on which a CdTe film is to be formed, to make the coating film to face the surface of the substrate; and a step of forming a CdTe film on the substrate, by heating the coating film and the substrate, and causing the material for the semiconductor in the coating film to evaporate.

Abstract: A semiconductor layer for photoelectric transfer device for forming a p-n junction, which has large surface area and uniform film pressure, is formed in the atmosphere under normal pressure for several minutes. The semiconductor layer for forming a p-n junction is composed of a compound semiconductor of a Group II element(selected from the group consisting of Cd, Zn and Hg)-Group VI element(selected from the group consisting of S and Te). A semiconductor layer having a p or n conductive type is formed on a substrate by pyrolytically decomposing an organometallic compound containing a II-VI group atom bond. A semiconductor film is formed on the surface of a substrate by dispersing or dissolving an organometallic compound in a solvent to form a solution, applying ink on the surface of the substrate using a suitable printing method and subjecting to a heat treatment.

Abstract: This invention relates to a manufacturing method of a compound semiconductor thin film derived from a metal sulfide produced by thermal decomposition of a sulfur-containing metal organic compound, the compound containing at least one functional group having at least one metal atom selected from the group consisting of copper, zinc, cadmium, mercury, and lead, and the functional group also containing at least one sulfur atom. Since the obtained metal sulfides are of high-purity and dense, they can be utilized in various photoelectric devices. Particularly, the photoelectric conversion efficiency of a CdS/CdTe system thin film compound semiconductor solar cell can be improved remarkably by employing a layer made of a CdS thin film as a window of the solar cell.