Abstract: A failure detection circuit is provided in the target circuit having a first circuit area for operating in synchronization with the first clock signal, a first detection circuit for outputting a first detection result obtained by transitioning the voltage level in synchronization with the first clock signal, the first clock signal a second detection circuit for outputting a second detection result obtained by transitioning the voltage level in synchronization with, and a first comparison circuit for outputting a first comparison result by comparing the first detection result and the second detection result. Accordingly, by the failure detection circuit, it is possible to detect the failure accurately.

Abstract: A battery of the present disclosure includes: a power-generation element including a plurality of laminated battery cells connected electrically in parallel, each battery cell including an electrode layer, a counter-electrode layer, and a solid electrolyte layer; and a first connection member connected to a side surface of the power-generation element, and the first connection member includes a first metal layer having a first surface facing the side surface, a first insulating layer located on the first surface, and first conductive vias passing through the first insulating layer and electrically connecting the first metal layer and the electrode layers.

Abstract: A battery of the present disclosure includes: a power-generation element including a plurality of laminated battery cells connected electrically in parallel, each battery cell including an electrode layer, a counter-electrode layer, and a solid electrolyte layer; and a first connection member connected to a side surface of the power-generation element, the first connection member includes a first base material having a first surface facing the side surface and a first conductive member located on the first surface and electrically connected to the electrode layers, and one or more first insulating members are located so as to cover the counter-electrode layers on the side surface.

Abstract: A transmission apparatus performs communication with a transmission side transmission apparatus via a transmission path of an active system and a transmission path of a standby system. The transmission apparatus includes: a memory configured to have a capacity that is as large as delay caused due to a maximum path difference between the transmission path of the active system and the transmission path of the standby system is allowable; and a memory connection control unit configured to switch connection of the memory and cause a signal of the transmission path of the active system or the transmission path of the standby system to be accumulated in the memory.

Abstract: An optical transmission system including an optical transmission device and an optical reception device that receives, via an optical transmission line, a signal transmitted from the optical transmission device, the optical transmission system including a transmission-mode selection unit that selects transmission mode information in descending order of priority out of transmission mode information, which is combinations of a plurality of parameters concerning transmission performance, the transmission mode information being a plurality of kinds of the transmission mode information common to the transmission performance of the optical transmission device and the optical reception device, a signal transmission unit that transmits, to the optical reception device, a signal modulated based on the selected transmission mode information, and a signal reception unit that receives the signal and modulates the received signal based on the transmission mode information selected by the transmission-mode selection unit.

Abstract: An optical transmission system including an optical transmission device and an optical reception device that receives, via an optical transmission line, a signal transmitted from the optical transmission device, the optical transmission system including a transmission-mode selection unit that selects transmission mode information in descending order of priority out of transmission mode information, which is combinations of a plurality of parameters concerning transmission performance, the transmission mode information being a plurality of kinds of the transmission mode information common to the transmission performance of the optical transmission device and the optical reception device, a signal transmission unit that transmits, to the optical reception device, a signal modulated based on the selected transmission mode information, and a signal reception unit that receives the signal and modulates the received signal based on the transmission mode information selected by the transmission-mode selection unit.

Abstract: A first reception processing unit performs a process of receiving a first signal transmitted on a first transmission line, a second reception processing unit performs a process of receiving a second signal transmitted on a second transmission line, and an output speed control unit controls output speeds of the first signal and the second signal subjected to the reception process. A system switching unit selects and outputs the first signal or the second signal subjected to a reception process, and an output processing unit performs a process for output to another apparatus on the output from the system switching unit. A reception side clock output unit outputs a clock signal giving a processing timing of each process, and a clock frequency control unit adjusts a frequency of the clock signal giving the processing timing to the output processing unit.

Abstract: A transmission apparatus includes redundant first communication devices configured to communicate with a communication apparatus provided in a first network, and redundant second communication devices configured to communicate with a communication apparatus provided in a second network. The second communication devices include respective first ends that are ends of redundant communication paths of the first communication devices, and the first communication devices include respective second ends that are ends of redundant communication paths of the second communication devices.

Abstract: A heat exchanger includes: a heat exchange core portion; and a tank portion connected to the heat exchange core portion. The heat exchange core portion has a connection plate that surrounds a part of the tank portion from an outer peripheral side. The connection plate has slit-shaped openings arranged along an edge of the connection plate in a first direction. A part of the connection plate between each of the openings and the edge is deformable into a concave shape toward the tank portion. A part of the openings has a widened portion at both ends in the first direction. A width dimension of the widened portion in a second direction from the opening to the edge is larger than that of the other portion of the opening.

Abstract: An estimation method includes: generating information regarding success or not success in a connectivity checking test between “N” nodes in a case in which a failure occurs in a verification target path including the nodes, the information being generated as pattern information for each failure location; selecting “M” network devices from among a plurality of network devices in accordance with occurrence of the failure; executing the connectivity checking test between the selected network devices; comparing a checking result of the connectivity checking test with pattern information that satisfies “N=M” in the pattern information; and estimating the failure location in the service path based on the failure location associated with the pattern information in a case in which the pattern information that satisfies “N=M” matches the checking result.

Abstract: A fault diagnosis unit (42) of a fault diagnosis apparatus (4) performs a fault diagnosis of a communication network (2) with a probabilistic inference algorithm using information on the communication network (2) having been gathered by an NW monitoring unit (41). A diagnosis result determining unit (43) determines test items for confirming and determining a diagnosis result of the fault diagnosis. A test performing unit (44) performs a confirmation test of the determined test items. The diagnosis result determining unit (43) determines a likelihood of the diagnosis result of the fault diagnosis based on a result of the confirmation test.

Abstract: An adapting device according to an embodiment includes: a first storage unit configured to store correspondence information representing a correspondence relation between processing requested by a higher-level system and a method for implementing the processing in a lower-level system; a conversion unit configured to convert a processing request from the higher-level system to the lower-level system into a processing procedure capable of being implemented in the lower-level system and supply the processing procedure to the lower-level system; and an additional information processing unit configured to generate additional information to be supplied to the lower-level system together with the processing procedure.

Abstract: An axle structure is provided with an axle housing for internally passing an axle shaft having wheels connected to both left and right ends thereof, and a drive motor unit. The axle housing includes a large diameter housing center portion having a recessed portion which is recessed from an opening portion on a front surface side toward a rear surface side, and small diameter hollow shaft portions connected as a left and right pair to both sides of the housing center portion. The drive motor unit is fitted into the recessed portion and is bolted to the axle housing by means of tightening bolts.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element with n-type, active, and p-type layers stacked vertically and made of AlGaN-based wurtzite structured semiconductors. The active layer has a quantum-well structure and each layer is epitaxially grown having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has a stratiform regions with locally lower AlN mole fraction which is inclined with respect to an upper surface of the n-type layer. The p-type layer has a lowermost electron blocking layer and an uppermost contact layer. Each semiconductor layer in the active layer and the electron blocking layer have inclined regions with respect to the (0001) plane connecting adjacent terraces of the multi-step terraces, and terrace regions other than inclined regions. An AlN mole fraction of the terrace regions in the electron blocking layer is between 69% and 89%, inclusive.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al2Ga1N3. The well layer includes a second Ga-rich region, which includes an AlGaN region in which an AlGaN composition ratio is an integer ratio of Al1Ga1N2 or Al5Ga7N12.

Abstract: Glass for a vehicle includes a glass plate; a test-region A demarcated in the glass plate, the test-region A being specified in JIS R3212; a shielding layer provided more outwardly than the test-region A in a plan view; an information transmission/reception region demarcated within an opening portion provided in the shielding layer, and through which a device mounted in the vehicle transmits/receives information; and an infrared reflective layer positioned peripheral to the information transmission/reception region in a plan view, the infrared reflective layer having a portion that overlaps with the shielding layer in a plan view, wherein a solar direct transmittance of the test-region A is 60% or less and a solar direct reflectance of a region in which the infrared reflective layer is provided peripheral to the information transmission/reception region is greater than a solar direct reflectance of the test-region A by at least 5%.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al7Ga5N12, and each extending direction of the stratiform regions is inclined with respect to the upper surface of the n-type layer.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al1Ga1N2. The well layer includes a second Ga-rich region, which includes an AlGaN region in which an AlGaN composition ratio is an integer ratio of Al1Ga2N3.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al1Ga1N2. The well layer includes a second Ga-rich region, which includes an AlGaN region in which an AlGaN composition ratio is an integer ratio of Al1Ga2N3.

Abstract: A transmission device includes a frame processing unit, a redundant channel processing unit, a transmission and reception unit, and a channel selection unit. The frame processing unit generates division frames, adds error detection signals to the division frames, and outputs the division frames to which the error detection signals are added to a plurality of data channels. The redundant channel processing unit generates, from the division frames, one or more redundant frames including restoration information that enables restoration of the division frames, and outputs the generated redundant frames to a data channel. The transmission and reception unit outputs the division frames and the redundant frames to a transmission line. The channel selection unit allocates the division frames and the redundant frames to allocable transmission and reception units.