Abstract: A wireless power transfer system includes a power receiving device that receives transmission by wireless power transfer, a transmission device that has a transmission element that transmits transmission power to the power receiving device, the transmission device having a control mechanism that controls an oriented direction of the transmission element, and a positioning device that is connected communicably with the transmission device, the positioning device receiving with a plurality of antennas arranged adjacent to each other a positioning signal that is a wireless signal transmitted from the power receiving device, the positioning device having a positioning function that calculates a direction ? in which the power receiving device exists when seen from the positioning device itself and a position of the power receiving device, based on a phase difference between the received positioning signals.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided with: an underlying structure portion including a sapphire (0001) substrate and an AlN layer formed on the substrate; and a light-emitting element structure portion including an n-type cladding layer of an n-type AlGaN based semiconductor layer, an active layer having an AlGaN based semiconductor layer, and a p-type cladding layer of a p-type AlGaN based semiconductor layer, formed on the underlying structure portion. The (0001) surface of the substrate is inclined at an off angle which is equal to or greater than 0.6° and is equal to or smaller than 3.0°, and an AlN molar fraction of the n-type cladding layer is equal to or higher than 50%.

Abstract: A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlxGayN(0001) layer (1?x>0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlxGayN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.

Abstract: An optical communication apparatus, in the sending side, distributes client signals according to destinations and a communication capacity of each destination, electrical-to-optical converts the distributed signals to optical signals having different center frequencies, and multiplexes the optical signals to output, and in the receiving side, the optical communication apparatus divides the wavelength division multiplexed signal to each wavelength (for each sending source), optical-to-electrical converts the divided optical signals to electrical signals, and multiplexes the electrical signals to output. An add/drop port of an optical route switching apparatus includes an input/output port to the optical communication apparatus, and an optical frequency bandwidth is variable according to an optical spectrum width of the optical signal. A network is constructed by using the optical communication apparatus and the optical route switching apparatus.

Abstract: An ultraviolet light emitting device having high quality and high reliability is provided by preventing deterioration of electrical characteristics which is associated with an ultraviolet light emission operation and caused by a sealing resin. The ultraviolet light emitting device is an ultraviolet light emitting device including: an ultraviolet light emitting element (2) formed of a nitride semiconductor; and an ultraviolet-transparent sealing resin (3) covering the ultraviolet light emitting element (2), wherein at least a specific portion (3a) of the sealing resin (3), which is in contact with pad electrodes (18) and (17) of the ultraviolet light emitting element (2), is a first type amorphous fluororesin, and a terminal functional group of a polymer or a copolymer that forms the first type amorphous fluororesin is a nonreactive terminal functional group which is not bondable to a metal that forms the pad electrodes (16) and (17).

Abstract: The present invention provides a method for producing a template for epitaxial growth, the method including: a surface treatment step of dispersing Ga atoms on a surface of a sapphire substrate; and an AlN growth step of epitaxially growing an AlN layer on the sapphire substrate, wherein in a Ga concentration distribution in a depth direction perpendicular to the surface of the sapphire substrate in an internal region of the AlN layer excluding a near-surface region up to a depth of 100 nm from the surface of the AlN layer, which is obtained by secondary ion mass spectrometry, a position in the depth direction where the Ga concentration takes the maximum value is present in a near-interface region located between the interface of the sapphire substrate and a position at 400 nm spaced apart from the interface to the AlN layer side, and the maximum value of the Ga concentration is 3×1017 atoms/cm3 or more and 2×1020 atoms/cm3 or less.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided with: an underlying structure portion including a sapphire (0001) substrate and an AlN layer formed on the substrate; and a light-emitting element structure portion including an n-type cladding layer of an n-type AlGaN based semiconductor layer, an active layer having an AlGaN based semiconductor layer, and a p-type cladding layer of a p-type AlGaN based semiconductor layer, formed on the underlying structure portion. The (0001) surface of the substrate is inclined at an off angle which is equal to or greater than 0.6° and is equal to or smaller than 3.0°, and an AlN molar fraction of the n-type cladding layer is equal to or higher than 50%.

Abstract: A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlxGayN(0001) layer (1?x>0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlxGayN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.

Abstract: An ultraviolet light emitting device having high quality and high reliability is provided by preventing deterioration of electrical characteristics which is associated with an ultraviolet light emission operation and caused by a sealing resin.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided with: an underlying structure portion including a sapphire (0001) substrate and an AlN layer formed on the substrate; and a light-emitting element structure portion including an n-type cladding layer of an n-type AlGaN based semiconductor layer, an active layer having an AlGaN based semiconductor layer, and a p-type cladding layer of a p-type AlGaN based semiconductor layer, formed on the underlying structure portion. The (0001) surface of the substrate is inclined at an off angle which is equal to or greater than 0.6° and is equal to or smaller than 3.0°, and an AlN molar fraction of the n-type cladding layer is equal to or higher than 50%.

Abstract: A transmission system includes: an error correction encoding agent which converts an input data sequence into an encoded data sequence constituted of an error correction code and coded data; a data distribution agent which divides the encoded data sequence from the error correction encoding agent, in a predetermined processing unit and send them to a plurality of transmission routes; a data combining agent which combines signal sequences from the respective transmission routes and restores the encoded data sequence; an error correction decoding agent which applies error correction to and decodes the encoded data sequence from the data combining agent and outputs the input data sequence; and an agent for configuration in which a redundancy in the error correction encoding agent and a degree of splitting of the encoded data sequence in the data distribution agent are set.

Abstract: Accommodation design for wavelength and sub-? paths in a communication network is performed. If sub-? path accommodation is possible according to search for a wavelength path present in a single-hop logical route, the accommodation in the wavelength path is executed. If sub-? path accommodation is possible according to search for a wavelength path present in a multi-hop logical route, a logical route is selected based on the wavelength path and the sub-? path is accommodated in the wavelength path. Additionally, each physical route suitable for the sub-? path accommodation is searched for. If the route can accommodate a wavelength path set in a single-hop logical route by available wavelength allocation, the sub-? path is accommodated in the wavelength path. Furthermore, routes in consideration of overlapping of nodes, pipelines, and links and operation rate are selected based on information about the start and end nodes of each of redundant routes.

Abstract: A wavelength path reallocation method in a path reallocation apparatus for reallocating a wavelength path set in a communication network, including: a wavelength path designing step in which a wavelength path designing unit designs a reallocation destination wavelength path by performing calculation such that the number of use frequency regions in the communication network becomes smaller than a corresponding value before reallocation; and a wavelength path setting step in which a wavelength path setting unit changes a reallocation target wavelength path to the reallocation destination wavelength path by using free wavelength.

Abstract: A frequency assignment method for selecting a frequency width used on a route connecting between a start point and an end point when the start point and the end point of an optical signal are supplied in a photonic network including an optical node that includes an optical switch for switching the optical signal without electrically terminating the optical signal is disclosed. The frequency assignment method includes steps of: obtaining a correlation amount of use state of wavelength or frequency between adjacent links by referring to a route calculation result; determining a fixed frequency width or variable frequency width to be set for a communication route based on the correlation amount; and assigning the fixed frequency width or the variable frequency width on the route.

Abstract: An ultraviolet light emitting device having high quality and high reliability is provided by preventing deterioration of electrical characteristics which is associated with an ultraviolet light emission operation and caused by a sealing resin. The ultraviolet light emitting device is an ultraviolet light emitting device including: an ultraviolet light emitting element (2) formed of a nitride semiconductor; and an ultraviolet-transparent sealing resin (3) covering the ultraviolet light emitting element (2), wherein at least a specific portion (3a) of the sealing resin (3), which is in contact with pad electrodes (18) and (17) of the ultraviolet light emitting element (2), is a first type amorphous fluororesin, and a terminal functional group of a polymer or a copolymer that forms the first type amorphous fluororesin is a nonreactive terminal functional group which is not bondable to a metal that forms the pad electrodes (16) and (17).

Abstract: An active layer including an AlGaN semiconductor layer having a band gap energy of 3.4 eV or higher and a p-type cladding layer configured of a p-type AlGaN semiconductor layer and located above the active layer are formed in a first region on the n-type cladding layer, the first region being in a plane parallel to a surface of the n-cladding layer configured of an n-type AlGaN semiconductor layer. An n-electrode metal layer making Ohmic contact with the n-type cladding layer is formed on an adjacent region to the first region in a second region which is a region other than the first region on the n-type cladding layer. A first reflective metal layer reflecting ultraviolet light emitted from the active layer is formed on a surface of the n-type cladding layer in the second region other than the adjacent region. The n-electrode metal layer is arranged between the first region and a region in which the first reflective metal layer contacts the surface of the n-type cladding layer.

Abstract: A bandwidth variable communication method is provided that enables effective use of frequency bandwidths in which the bit rate is constant in every optical path. The bandwidth variable communication method includes, when a network management apparatus sets or changes an optical path that passes through plural communication apparatuses, measuring or obtaining an optical signal quality deterioration amount in a route of the optical path; selecting a modulation format in which a spectrum bandwidth is the narrowest from among modulation formats by which transmission is available on conditions of the optical signal quality deterioration amount and a desired bit rate B (bit/s); and exchanging control information between the network management apparatus and a control unit of each communication apparatus on the optical path route. A bandwidth variable communication apparatus receives the control information, and changes a passband based on the received control information.

Abstract: Performing power transfer to a plurality of power receiving devices, a power transmission device allocates one of a plurality of channels to perform wireless power transfer to a power receiving device in response to a power transmission request transmitted from the power receiving device designating one or more of the plurality of the channels having different frequencies. In a case where a power transmission request using the first channel is received from a second power receiving device, the device stops power transfer to the first power receiving device using the first channel, starts power transfer to the first power receiving device using a channel other than the first channel and starts power transfer to the second power receiving device using the first channel.

Abstract: A wireless power transfer system includes a power receiving device that receives transmission by wireless power transfer, a transmission device that has a transmission element that transmits transmission power to the power receiving device, the transmission device having a control mechanism that controls an oriented direction of the transmission element, and a positioning device that is connected communicably with the transmission device, the positioning device receiving with a plurality of antennas arranged adjacent to each other a positioning signal that is a wireless signal transmitted from the power receiving device, the positioning device having a positioning function that calculates a direction ? in which the power receiving device exists when seen from the positioning device itself and a position of the power receiving device, based on a phase difference between the received positioning signals.

Abstract: An optical communication apparatus, in the sending side, distributes client signals according to destinations and a communication capacity of each destination, electrical-to-optical converts the distributed signals to optical signals having different center frequencies, and multiplexes the optical signals to output, and in the receiving side, the optical communication apparatus divides the wavelength division multiplexed signal to each wavelength (for each sending source), optical-to-electrical converts the divided optical signals to electrical signals, and multiplexes the electrical signals to output. An add/drop port of an optical route switching apparatus includes an input/output port to the optical communication apparatus, and an optical frequency bandwidth is variable according to an optical spectrum width of the optical signal. A network is constructed by using the optical communication apparatus and the optical route switching apparatus.