Abstract: A curved surface display comprises: a first substrate that is curved such that a portion located at a center in a first direction is convex or concave toward a display surface side compared with portions located at both ends in the first direction; a second substrate that is curved along the first substrate while disposed opposite the first substrate; and a sealing material that bonds the first substrate and the second substrate together. The sealing material includes a first sealing section extending in a second direction and a second sealing section extending in the first direction. A width of the first sealing section is larger than a width of the second sealing section.

Abstract: A curved surface display comprises: a first substrate that is curved such that a portion located at a center in a first direction is convex or concave toward a display surface side compared with portions located at both ends in the first direction; a second substrate that is curved along the first substrate while disposed opposite the first substrate; and a sealing material that bonds the first substrate and the second substrate together. The sealing material includes a first sealing section extending in a second direction and a second sealing section extending in the first direction. A width of the first sealing section is larger than a width of the second sealing section.

Abstract: A manufacturing method of a semiconductor device which can decrease the degradation of an element due to plasma in the LDD formation process is provided. The degradation of an element due to plasma is decreased by forming an element having an LDD structure according to a manufacturing method of a semiconductor device using a hard mask. Covering the substrate by an electrically conductive film allover, the density of electric charge accumulated in a gate electrode in the plasma process such as anisotropic etching can be reduced, and the degradation due to plasma process can be reduced.

Abstract: A manufacturing method of a semiconductor device which can decrease the degradation of an element due to plasma in the LDD formation process is provided. The degradation of an element due to plasma is decreased by forming an element having an LDD structure according to a manufacturing method of a semiconductor device using a hard mask. Covering the substrate by an electrically conductive film allover, the density of electric charge accumulated in a gate electrode in the plasma process such as anisotropic etching can be reduced, and the degradation due to plasma process can be reduced.

Abstract: A manufacturing method of a semiconductor device which can decrease the degradation of an element due to plasma in the LDD formation process is provided. The degradation of an element due to plasma is decreased by forming an element having an LDD structure according to a manufacturing method of a semiconductor device using a hard mask. Covering the substrate by an electrically conductive film allover, the density of electric charge accumulated in a gate electrode in the plasma process such as anisotropic etching can be reduced, and the degradation due, to plasma process can be reduced.

Abstract: A manufacturing method of a semiconductor device which can decrease the degradation of an element due to plasma in the LDD formation process is provided. The degradation of an element due to plasma is decreased by forming an element having an LDD structure according to a manufacturing method of a semiconductor device using a hard mask. Covering the substrate by an electrically conductive film allover, the density of electric charge accumulated in a gate electrode in the plasma process such as anisotropic etching can be reduced, and the degradation due, to plasma process can be reduced.

Abstract: A manufacturing method of a semiconductor device which can decrease the degradation of an element due to plasma in the LDD formation process is provided. The degradation of an element due to plasma is decreased by forming an element having an LDD structure according to a manufacturing method of a semiconductor device using a hard mask. Covering the substrate by an electrically conductive film allover, the density of electric charge accumulated in a gate electrode in the plasma process such as anisotropic etching can be reduced, and the degradation due to plasma process can be reduced.

Abstract: A terrestrial change prediction apparatus including an indicator having a fixing member made of a nonmagnetic material and a plurality of magnetic bodies each having an N-pole end and an S-pole end and fixedly secured to the fixing member with the same magnetic polarity ends facing to each other so that a magnetic repulsive force is produced therebetween. The indicator is rotatably supported such that the magnetic bodies normally orient in a substantially constant direction. Before a terrestrial change such as an earthquake occurs, the indicator displaces. By measuring the displacement of the indicator, an occurrence of a terrestrial change can be predected.